过渡金属Mn对SiC薄膜的结构和光学性能的影响

采用射频磁控溅射的方法在Si衬底上制备了掺Mn的SiC薄膜,用X射线衍射、傅里叶变换红外光谱、扫描电镜及荧光光谱等方法,对薄膜的结构、表面形貌、化学键状态和光学性能进行了研究。结果表明：掺Mn使SiC晶格发生畸变,X射线衍射峰强度下降,Si-C键振动减弱;同时,由于掺Mn后提供了更多的Si空位复合发光中心,SiC薄膜在近带边414nm处的室温光荧光峰增强为1．3倍。     

溶胶-凝胶法制备Na/Mg共掺ZnO薄膜的特性研究

利用溶胶-凝胶旋涂法制备了Na/Mg共掺ZnO薄膜。通过与未掺杂及只掺Mg的ZnO薄膜的对比分析,重点研究了Na/Mg共掺ZnO薄膜的结构、光学及电学特性。扫描电子显微镜(SEM)图像、X射线衍射(XRD)图谱、透射光谱及PL谱的分析结果表明,Na/Mg共掺有利于提高ZnO薄膜的结晶特性及c轴择优取向性。Na/Mg共掺会使得ZnO薄膜的禁带宽度增加,但增加的幅度小于单独掺Mg引起的禁带宽度增加。消除氧空位缺陷后,Na/Mg共掺ZnO薄膜将是一种很好的紫外发光材料。霍尔效应分析结果表明,Na/Mg共掺杂可将ZnO薄膜导电性从N型转变为P型,且使电阻率有很大幅度的增加。     

Mn掺杂对ZnO薄膜结构和光学性质的影响

利用脉冲激光淀积的方法在Si衬底上生长出了c轴高度取向的ZnO和Zn0.9Mn（0.1）O薄膜.光致发光结果显示了Mn的掺杂引起了薄膜的带边发射蓝移,强度减弱,紫光发射几乎消失,但绿光发射增强.利用X射线衍射,X射线吸收精细结构和X射线光电子能谱等实验技术对Mn掺杂的ZnO薄膜的结构及其对光学性质影响进行了研究.结果表明：Mn掺入到ZnO薄膜中形成了Zn0.9Mn0.1O合金薄膜,Mn以＋2价的价态存在,这就导致了掺Mn以后的薄膜带隙变大,在发光谱中表现为带边发射的蓝移.同时由于掺入的Mn与薄膜中的填隙Zn反应,导致薄膜的结晶性变差,薄膜中的填隙Zn减少,O空位增多,引起带边发射和紫光发射减弱,绿光发射增强.     

Al-N共掺杂型ZnO薄膜的制备及其性能研究

采用溶胶-凝胶法制备了Al-N共掺ZnO薄膜.用X射线光电子能谱检测Al-N共掺杂情况;用X射线衍射仪、原子力显微镜、场发射扫描电镜、分光光度计、霍尔测量仪等分析测试手段,分别研究了Al-N共掺的掺杂浓度和热处理温度对薄膜的结晶性能、微观形貌和光电性能的影响.结果表明:在基质ZnO溶胶浓度为0.5mol/L,Al-N掺杂摩尔浓度为10%,热处理温度600℃下,Al-N共掺ZnO薄膜的结晶性能、微观形貌和光电性能最佳.     

Zn2SiO4：Mn光致发光薄膜的溶胶-凝胶法制备及发光性质的研究

以乙酸锌、氯化锰、无水乙醇、正硅酸为主要原料,用溶胶-凝胶浸渍提拉法在石英片上制得Zn2SiO4：Mn薄膜前驱体,经高温煅烧获得到Zn2SiO4：Mn荧光薄膜,荧光分析其发光性能。     

透明导电薄膜ZnO∶Mn的低温制备及性能研究

利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的掺锰氧化锌(ZnO∶Mn)透明导电薄膜。实验制备的ZnO∶Mn为六方纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO∶Mn薄膜的生长速率、残余应力及电学性能有很大影响,而对薄膜的晶粒尺寸和光学性能影响不大。考虑薄膜的电学、光学及力学性能,认为靶与衬底之间的最佳距离为7.0 cm。在此条件下制备的ZnO∶Mn薄膜的电阻率达到4.2×10-4Ω.cm,可见光透过率为86.6%,而残余应力仅为-0.025 GPa。     

透明导电薄膜ZnO:Mn的低温制备及性能研究

利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的掺锰氧化锌(ZnO:Mn)透明导电薄膜.实验制备的ZnO:Mn为六方纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向.实验结果表明,靶与衬底之间的距离对ZnO:Mn薄膜的生长速率、残余应力及电学性能有很大影响,而对薄膜的晶粒尺寸和光学性能影响不大.考虑薄膜的电学、光学及力学性能,认为靶与衬底之间的最佳距离为7.0 cm.在此条件下制备的ZnO:Mn薄膜的电阻率达到4.2×10-4 Ω·cm,可见光透过率为86.6％,丽残余应力仅为-0.025 GPa.     

Mn、Co掺杂ZnO薄膜结构及发光特性研究

利用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了ZnO、Zn0.8Mn0.2O、Zn0.8Co0.2O薄膜.薄膜的晶体结构和表面形貌采用X射线衍射仪和原子力显微镜测试.表明薄膜具有明显的c轴择优生长取向,薄膜表面较为平整,颗粒尺寸在纳米量级,薄膜中晶粒的生长模式为"柱状"模式.此外,Mn、Co掺入后,薄膜的X射线衍射峰有小角度偏移,这与 Mn2 、Co2 离子半径有关.PL谱显示Mn、Co掺杂ZnO薄膜的蓝、绿发光峰的位置相对纯的ZnO薄膜没有改变,还出现了紫外发光峰,其中Mn掺杂的蓝、绿光峰的强度减弱,Co掺杂的蓝光峰强度减弱,绿光峰强度增强.这是因为Mn、Co掺入改变了ZnO本征缺陷的浓度,发光峰的强度也随之而改变.     

沉积时间对脉冲激光沉积法制备ZnO薄膜性能的影响

采用脉冲激光沉积技术(PLD)在氧气气氛中以高纯Zn为(99.999%)靶材,在单晶硅和石英衬底表面成功生长了ZnO薄膜.通过X射线衍射仪、表明轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了ZnO薄膜的沉积时间对其性能的影响.结果表明,采用PLD法在室温下可以制备出(002)结晶取向和透过率高于75%的ZnO薄膜,但室温下沉积的ZnO薄膜的发射性能较差,沉积时间的延长不能改善薄膜的发光性能.     

Li、Mg双组分掺杂ZnO薄膜的结构与性能

采用溶胶-凝胶法Li、Mg双组分掺杂制备ZnO薄膜。利用XRD、AFM、Hall测试仪、分光光度仪等对薄膜结构和电学光学性能表征与分析，探讨了Li、Mg双组分掺杂离子、掺杂比例对ZnO薄膜晶体生长和光、电性能的影响。研究表明Li、Mg双组分掺杂提高了ZnO薄膜的电阻率；在可见光范围仍具有较好的透光性能，双组分掺杂ZnO薄膜因为Mg的掺入而具备了Zn1-x-yMgxO薄膜的相关光学特性，吸收峰具有蓝移现象，禁带宽度变大；结晶性能变差，晶粒变小，c轴的取向性变差。     

衬底温度对Zn0.85 Mg0.13 Al0.020薄膜结构和发光特性的影响

采用射频磁控溅射方法,在Si(111)基片上制备出Zn0.85Mg0.13Al0.02O薄膜。X射线衍射(XRD)证实Zn0.85Mg0.13Al0.02O薄膜为单相六角钎锌矿结构,衬底温度从室温升高到500℃,薄膜沿c轴择优生长。原子力显微镜(AFM)测量显示薄膜表面粗糙度随衬底温度的升高由9.32nm增加到19.94nm。荧光光谱仪(PL)测量显示薄膜在397nm附近有强的紫光发射,在486nm处有弱的蓝光峰,随衬底温度的升高紫峰强度提高15倍。在可见光范围内,薄膜平均透过率随衬底温度的升高由75%增加到95%,薄膜光学带隙分别为3.18,3.18和3.19eV。分析表明紫峰来自于自由激子复合,蓝峰由俘获在施主能级Zn填隙中的电子与俘获在受主能级Zn空位中的空穴复合而产生发光。     

Luminescence mechanisms of organic/inorganic hybrid organic light-emitting devices fabricated utilizing a Zn2SiO4:Mn color-conversion layer

Zn₂SiO₄:Mn phosphor layers used in this study were synthesized by using the sol-gel method and printed on the glass substrates by using a vehicle solution and a heating process. Organic/inorganic hybrid organic light-emitting devices (OLEDs) utilizing a Zn₂SiO₄:Mn color-conversion layer were fabricated. X-ray diffraction data for the synthesized Zn₂SiO₄:Mn phosphor films showed that the Zn ions in the phosphor were substituted into Mn ions. The electroluminescence (EL) spectrum of the deep blue OLEDs showed that a dominant peak at 461 nm appeared. The photoluminescence spectrum for the Zn₂SiO₄:Mn phosphor layer by using a 470 nm excitation source showed that a dominant peak at 527 nm appeared, which originated from the ⁴T₁-⁶A₁ transitions of Mn ions. The appearance of the peak around 527 nm of the EL spectra for the OLEDs fabricated utilizing a Zn₂SiO₄:Mn phosphor layer demonstrated that the emitted blue color from the deep blue OLEDs was converted into a green color due to the existence of the color-conversion layer. The luminescence mechanisms of organic/inorganic hybrid OLEDs fabricated utilizing a Zn₂SiO₄:Mn color-conversion layer are described on the basis of the EL and PL spectra.     

Growth and optical properties of nanostructured ZnS:Mn films

Nanostructured ZnS:Mn films have been grown and their structure, optical properties, and photoluminescence have been studied. The nanostructured ZnS:Mn films have been grown on silicon and glass substrates via hydrochemical deposition from solution. The crystal structure and microstructure of the films have been studied by X-ray diffraction and atomic force microscopy. The band gap of the nanostructured ZnS:Mn films has been determined. The intensity of their photoluminescence bands has been shown to increase with decreasing nanoparticle size.     

Modification of Mn on corrosion and mechanical behavior of biodegradable Mg_(88)Y_4Zn_2Li_5 alloy with long-period stacking ordered structure

The biological corrosion behavior and mechanical properties of Mg_(89-x)Y_4 Zn_2 Li_5 Mn_x(x=0,0.5,1,1.5 and2 at.%) alloy with long-period stacking ordered(LPSO) structure were investigated in this work.The magnesium matrix and the eutectic phase of Mg_(88)Y_4 Zn_2 Li_5 Mn_1 alloy are effectively refined by the grain boundary segregation of Mn,and the average size of matrix and the eutectic phase decreased by 66%and 74%,respectively.The ultimate tensile strength(UTS) and elongation enhanced by 36% and 55%,respectively.The corrosion rates obtained by weight loss and hydrogen evolution of Mg_(88)Y_4 Zn_2 Li_5 Mn_1 alloy were 79% and 84% lower than that of Mg_(88)Y_4 Zn2 Li_5 alloy.Additionally,Mg_(88)Y_4 Zn_2 Li_5 Mn_1 alloy also presents superior corrosion behavior in electrochemical test.It is verified that Mn plays a positive role in both corrosion and mechanical properties of the Mg_(88)Y_4 Zn_2 Li_5 Mn_1 alloy,which provides a reference for further experimental work.     

实验优化设计中频反应溅射Al2O3:Ce薄膜发光性质研究

为了得到最优发光的薄膜材料成分参数,采用均匀设计和二次通用旋转组合设计相结合的方法建立发光强度与薄膜中氧含量和Ce³⁺ 离子掺杂浓度的回归方程,并用遗传算法求其取最大值时的解。用中频反应磁控溅射技术制备了相应成分的Al₂O₃:Ce非晶薄膜。在320nm光激发下,获得了较理想的发射光谱,对薄膜发光机理分析表明:薄膜的光致发光来自于Ce³⁺ 离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜的掺杂浓度和氧元素含量。XPS检测表明,Al₂O₃:Ce薄膜中存在Ce³⁺ 。Ce³⁺ 含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜试样的晶体结构应用X射线衍射分析。     

不同氧氩比例对氧化硅(SiO2)薄膜的结构及性能的影响

在不同氧氩比例气氛下,采用反应直流磁控溅射方法制备了SiO2薄膜.利用X射线衍射（XRD）、X射线光电子能谱（XPS）、原子力显微镜（AFM）和紫外可见光谱（UV-Visible spectrum）等研究了氧氩比例的不同对SiO2薄膜的晶体结构、化学配比、表面形貌和光学性能的影响.结果显示：室温下,不同氧氩比例的SiO2薄膜都为非晶结构;随着氧分量的增加,Si2p与O1s向高结合能方向移动;在氧分量较大的气氛下,SiO2薄膜的化学失配度较小,薄膜均匀,致密,在400-1100nm有良好的光透过性.     

Microstructural, photocatalysis and electrochemical investigations on CeTi2O6 thin films

The properties of sol–gel derived CeTi₂O₆ thin films deposited using a solution of cerium chloride heptahydrate and titanium propoxide in ethanol are discussed. The effect of annealing temperature on structural, optical, photoluminescence, photocatalysis and electrochemical characteristics has been examined. Lowest annealing temperature for the formation of crystalline CeTi₂O₆ phase in these samples is identified as 580 °C. The optical transmittance of the films is observed to be independent of the annealing temperature. The optical energy bandgap of the 600 °C annealed film for indirect transition is influenced by the presence of anatase phase of TiO₂ in its structure. Fourier transform infrared spectroscopy investigations have evidenced increased bond strength of the Ti–O–Ti network in the films as a function of annealing temperature. The photoluminescence intensity of the films has shown dependence on the annealing temperature with the films fired at 450 °C exhibiting the maximum photoluminescence activity. The decomposition of methyl orange and eosin (yellow) under UV–visible light irradiation in the presence of crystalline CeTi₂O₆ films shows the presence of photoactivity in these films. The photocatalytic response of CeTi₂O₆ films is found to be superior to the TiO₂ films. In comparison to crystalline films, the amorphous films have shown superior electrochemical characteristics. The 500 °C annealed amorphous films have exhibited the most appropriate properties for incorporation in electrochromic devices comprising tungsten oxide as the primary electrochromic electrode.     

溶胶-凝胶法制备无机纳米/聚酰亚胺杂化膜及其表征

采用溶胶-凝胶法制备了SiO2及A12O3溶胶,并将其掺入到聚酰胺酸基体中,得到无机纳米SiO2-Al2O3/聚酰亚胺杂化膜,并对其结构性能进行了研究.实验表明,薄膜材料中无机纳米SiO2和Al2O3粒子分散均匀,与有机相存在键合;材料热分解温度有所提高.     

Pechinin synthesis and luminescence properties of Y3Ga5O12(YGG):Tb thin film

YGG:Tb thin films were successfully prepared by Pechni sol-gel process. The structure, surface morphology, evolution of film crystallization and their luminescent properties were investigated. We find the annealing process is very important to the YGG:Tb film crystallization. Uniform crack-free films can be obtained by conventional annealing for 1 h after rapid thermal treating for 10 min at 800 °C. The excitation and emission spectra of photoluminescence (PL) were used to characterize the luminescent properties. The excitation spectrum of YGG:Tb is dominated by the 4f-4f5d transition of Tb³⁺at 260 nm. The emission peaks of phosphor thin film lie at 488 and 543 nm. It can be used as a promising phosphor material for FED or ELD application.     

聚酰亚胺/二氧化硅复合薄膜的热物性及其影响因素

应用自行研制的亚微米/微米薄膜激光脉冲法热扩散率测定仪和差示扫描量热仪(DSC)分别测定了聚酰亚胺(PI)薄膜和PI/SiO_2复合薄膜在不同温度下的热扩散率、热导率和比热,解决了激光脉冲法测定热导试样的透光问题.研究了PI/SiO_2复合薄膜的热物性随SiO_2添加量和温度的变化关系.结果表明:随着温度的升高,PI薄膜及PI/SiO_2复合薄膜的热扩散率下降,比热和热导率线性增加.在PI薄膜中添加SiO_2颗粒可降低PI薄膜的比热,明显增强导热性能,但是不会改变PI薄膜热导率随温度升高而增大的变化规律.