Ba0.9Sr0.1TiO3薄膜的椭偏光谱研究

用椭偏光谱仪首次在光子能量为2．1－5．2eV的范围内,测量了不同热处理温度下Ba0.9Sr0.1TiO3(BST)薄膜的椭偏光谱。建立适当的拟合模型,并用Cauchy色散模型描述BST薄膜的光学性质,用最优化法获得了所用样品的光学常数（折射率n和消光系数k）谱及禁带能Eg比较这些结果,初步得到了BST薄膜的折射率n、消光系数k和禁带能Eg随退火温度变化的变化规律。     

Ba_(0.9)Sr_(0.1)TiO_3薄膜的椭偏光谱研究

用椭偏光谱仪首次在光子能量为２．１～５．２ｅＶ的范围内,测量了不同热处理温度下Ｂａ０．９Ｓｒ０．１ＴｉＯ３（ＢＳＴ）薄膜的椭偏光谱,建立适当的拟合模型,并用Ｃａｕｃｈｙ色散模型描述ＢＳＴ薄膜的光学性质,用最优化法获得了所有样品的光学常数（折射率η和消光系数κ）谱及禁带能Ｅｇ．比较这些结果,初步得到了ＢＳＴ薄膜的折射率η、消光系数κ和禁带能Ｅｇ随退火温度变化的变化规律．     

铌酸锶钡薄膜制备及椭偏光谱研究

用溶胶-凝胶法成功地制备出了退火温度分别为500、600、700、800、900℃的铌酸锶钡(SBN)薄膜;对制备出SBN薄膜分别进行了椭偏光谱测量研究,得到了不同退火SBN薄膜椭偏光谱参数曲线;并对测得的椭偏光谱进行了数值反演计算,得到了不同退火温度的SBN薄膜的光学常数谱.结果发现SBN薄膜的折射率和消光系数都随着退火温度的增高而增大.     

椭偏术双入角法测定薄膜光学参数与厚度

运用“数值空间映射”概念讨论了椭偏术双入射角法测定薄膜的光学参数折射率(n)、消光系统(K)与厚度(d)的反演计算中出现的集合解现象。通过设置一个评价函数(F_u),用电子计算机来考察求解的结果,获得样品n、K与d的合理数值。用TP-77型单色椭偏仪对磁控反应溅射工艺制备的不锈钢-氧、不锈钢-一氧化碳与钛-氮三种复台薄膜材料的椭圆参量(∧,(?)),经计算机处理确定了这些样品的n、k与d值,和用(TYLASTEP及DEKTAKⅡA)台阶式测厚仪直接测得的薄膜厚度、透射—反射法确定的n、k的数值比较一致。这样,采用一台椭偏仪,以双入射角法能方便、经济又可靠地一次确定薄膜的光学参数n、k与厚度d。     

基于差异进化算法的椭偏测量数据反演

为解决椭偏法测量薄膜厚度和折射率实验数据处理较为复杂的问题,采用一种新的基于群体智能的优化算法—差异进化算法处理实验数据;以单层吸收薄膜的测量为例,利用该算法进行数据处理,实验结果表明,三个薄膜参数(折射率n,消光系数k和薄膜厚度d)是可以同时获得的,而且在未知参数确切范围情况下,较大范围内进行搜索仍然能保证快速收敛到最优解。文中算法和粒子群算法、遗传算法以及利用椭偏仪数据处理软件得出的结果相比较,表明该算法在椭偏测量数据反演中是一种可行的智能优化算法。     

反应射频磁控溅射法制备HfTaO薄膜的热稳定性和光学性能

采用反应射频磁控溅射技术制备HfTaO薄膜,利用X射线衍射(XRD)分析了薄膜的微结构,通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了薄膜的折射率和禁带宽度,利用原子力显微镜观察了薄膜的表面形貌。结果表明,随着Ta掺入量(10%,26%,50%)的增加,HfTaO薄膜的结晶化温度分别为800、900、950℃,Ta掺入量继续增加到72%,经过950℃退火处理的HfTaO薄膜仍然保持非晶态,具有优良的热稳定性。AFM形貌分析显示非晶HfTaO薄膜表面非常平整。在550nm处薄膜折射率n随着Ta掺入量的增大而增大,n的变化区间为1.90～2.15。同时HfTaO薄膜的光学带隙Eg随着Ta掺入量的增大而逐渐减小,Eg的变化区间为4.15～5.29eV。     

溶胶-凝胶法制备TiO_2薄膜及其光学性能的研究

采用溶胶-凝胶法在K9玻璃上制备了均匀、透明、裂纹较少的纳米TiO2薄膜,以无水乙醇用量、涂层数、煅烧温度为影响因素,设计L9(3)4正交试验,以薄膜的透明度、微观致密程度作为评价标准,讨论了无水乙醇用量、涂层数和煅烧温度对制备TiO2薄膜光学性能的影响。用反射式椭圆偏振光谱仪测试最佳制备工艺下制得的TiO2薄膜的椭偏参数,并用Cauchy模型对椭偏参数进行数据拟合。结果表明,薄膜最优制备工艺参数为无水乙醇用量30 m L、涂层数为2层、煅烧温度为550℃;Cauchy模型能较好的描述溶胶-凝胶薄膜在300~700 nm波段的光学性能;薄膜的折射率和消光系数都有随波长增大而减小的趋势且制备的薄膜具有随着膜层数的增加,折射率增加,而最大峰值透光率、孔隙率减小的规律。     

类金刚石薄膜光学特性的椭偏法研究

本文采用脉冲电弧离子镀的方法,在p型硅上沉积类金刚石薄膜,用椭偏法测试薄膜的光学常数.根据沉积方法的特点,建立一个四层结构的膜系,并由每一层的吸收情况合理选择色散关系;结合透过率的测试结果,利用光度法给测出薄膜折射率和厚度的估计值,作为椭偏法拟合的初值,拟合效果良好,得到薄膜的折射率、消光系数和几何厚度.     

LaTiO_3薄膜的光学及激光损伤特性

研究了工艺条件(沉积温度、真空度、蒸发束流)对LaTiO3薄膜光学和激光损伤特性的影响。采用椭偏法测量了薄膜的光学常数,分析了不同工艺条件下制备薄膜的折射率和消光系数,得出工艺参数与薄膜光学性能的相互关系。研究结果表明,当沉积温度从室温(未加热)升高到220℃,所制备薄膜的折射率从1.9334增大到1.9644(d光)。当真空度从6.5×10-3(未充O2)降低到2.0×10-2Pa时,薄膜的折射率从1.9726下降到1.9268。随着束流从75增加到140 m A,薄膜的折射率从1.9337到1.9548略微有所增加。在所研究的工艺参数范围内,薄膜的折射率基本稳定,消光系数均小于1.74×10-3,尤其当沉积速率低于0.44 nm/s时,所制备薄膜的消光系数优于10-6。LaTiO3薄膜的激光损伤形貌随制备工艺而不同,其激光损伤阈值约为16.2~18.8 J/cm2(1064 nm,10 ns)。     

基于透反射光谱确定Te/TeO_2-SiO_2复合薄膜的光学常数

基于电化学诱导sol-gel方法制备Te/TeO_2-SiO_2复合薄膜的紫外-近红外投射光谱实验,采用透反射光谱测量法推导出Te/TeO_2-SiO_2复合薄膜在200~1100nm波长范围内的光学常数,包括光学透过率、反射率、线性吸收系数、消光系数、线性折射率及禁带宽度。研究发现,复合薄膜具有高折射率(1.93~2.03),测试波长为1064nm,低吸收和禁带宽度宽(3.07~3.40eV)等光学特性,同时薄膜的光学常数对制备过程中的重要参数制备电压表现出强烈的依赖性,制备电压越大薄膜的光学透过率降低,薄膜厚度增大,线性折射率增大。     

Effects of annealing temperatures on optical and electrical properties of vacuum evaporated Ga15Se77In8 chalcogenide thin films

The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary parts of dielectric constants) of amorphous and thermally annealed thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses with thickness 4000 Å have been investigated from absorption and reflection spectra as a function of photon energy in the wave length region 400-800 nm. Thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses were thermally annealed for 2 h at three different annealing temperatures 333 K, 348 K and 363 K, which are in between the glass transition and crystallization temperature of Ga₁₅Se₇₇In₈ glasses. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It was found that the optical band gap decreases with increasing annealing temperature. It has been observed that the value of absorption coefficient and extinction coefficient increases while the values of refractive index decrease with increasing annealing temperature. The decrease in optical band gap is explained on the basis of the change in nature of films, from amorphous to crystalline state. The dc conductivity of amorphous and thermally annealed thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses is also reported for the temperature range 298-393 K. It has been observed that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. The dc conductivity was observed to increase with the corresponding decrease in activation energy on increasing annealing temperature in the present system. These results were analyzed in terms of the Davis-Mott model.     

Spectroscopic ellipsometry studies of amorphous PZT thin films with various Zr/Ti stoichiometries

Amorphous stoichiometric Pb(Zr _x Ti_{1 – x)}O₃) (PZT) thin films with various values of x were deposited on Si(100) substrates by the sol-gel technique. The influence of Ti content on the optical properties was studied by spectroscopic ellipsometry (SE) in the UV-visible region. Using a four-phase fitting model, the refractive index n and extinction coefficient k was obtained by analyzing the SE spectra. The optical band gap energies E _g for these films were reported under the assumption of a direct band-to-band transition. It has been found that the refractive index, extinction coefficient and band gap energy of the films were functions of the film compositions. The refractive index of the PZT films increases linearly with increasing Ti content. On the other hand, the optical band gap energy of the PZT films decreases with increasing Ti content.     

(Pb,Ca)TiO3铁电薄膜光学性质的研究

用溶胶凝胶法在Ｓｉ（１００）衬底上制备了（Ｐｂ,Ｃａ）ＴｉＯ３铁电薄膜样品,测量了其在２．３￣５．０ｅＶ能量范围的鸫谱,并获得样品的膜厚和在该区间的光学常数谱,实验发现Ｐｂ离子被Ｃａ离子取代后,折射率向低能方向移动;同时随着Ｃａ含量的增加,（Ｐｂ１Ｃａ（ＴＩＯ３工能方向移动,表明Ｃａ离子取代Ｐｂ离子后,禁带宽度Ｅｇ减小,还了引起折射率峰移动和禁带宽度Ｅｇ减小的原因。     

Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the Transparent Conductive CdIn_2O_4 Thin Films

Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε") of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated     

Synthesis and properties of zirconia thin films

Thin films of zirconia have been synthesized using reactive DC magnetron sputtering. It has been found that films with good optical constants, high refractive index (1·9 at 600 nm) and low extinction coefficient can be prepared at ambient temperatures. The optical constants and band gap and hence the composition are dependent on the deposition parameters such as target power, rate of deposition and oxygen background pressure. Thermal annealing of the films revealed that the films showed optical and crystalline inhomogeneity and also large variations in optical constants.     

Optical and microstructural characterization of sol/gel derived cerium-doped PZT thin films

Optical properties of cerium-doped PZT thin films on sapphire prepared by a sol-gel technique are investigated using both transmission and reflection spectra in the wavelength range 200 to 900 nm. The refractive index, extinction coefficient and thickness of the film are determined from the measured transmission spectra. The packing density of the film is calculated from its refractive index using the effective medium approximation (EMA), and average oscillator strength and wavelength are estimated using a Sellmeir-type dispersion equation. Absorption coefficient (α) and the band gap energy (E_g) of each film composition are also calculated. Possible correlations of microstructure and phase formation behaviour with changes in band gap energy and other optical properties are discussed. This revised version was published online in November 2006 with corrections to the Cover Date.     

热处理对钛酸锶钡薄膜光学性能的影响

采用无水溶胶-凝胶技术制备了钛酸锶钡光学薄膜,系统研究了预处理和退火温度对钛酸锶钡薄膜的相结构、微观形貌和光性能的影响,优化了薄膜的光学性能,结果表明,膜的结构和形貌直接影响其光学性能。通过150℃预处理和850℃退火获得了晶化程度良好、表面形貌平整致密的钛酸锶钡薄膜。该膜在350-1000nm的最大光透过率为80．72％,在600-1000nm的折射率稳定在-1．93左右,消光系数最小,最小值为4x10-5。     

Modeling of the refractive index and extinction coefficient of binary composite films

Southwell's analysis of optical multilayers within the limits of very thin films has been extended to include absorption in the multilayer for predicting the effective values of the refractive index n(e) and extinction coefficient k(e) of mixed-composition binary homogeneous films over a wide spectral region, including the high-absorption (k > 10(-2)) region. It has been found that n(e) in general is a complicated function of the optical parameters (n(1), k(1), n(2), k(2)) and volume fractions (f(1), f(2)) of the component materials in a homogeneous layer, and the expression for n(e) becomes the same as that predicted by the Drude model in the spectral region where the layers are transparent. Moreover, according to the present analysis, the volume fractions of the product of the refractive index and the extinction coefficient of the component materials of a binary composite film are additive and the sum equals the product of the effective refractive index and extinction coefficient of the composite film.     

溅射功率对Ge2Sb2Te5薄膜光学常数的影响

研究了溅射功率对Ｇｅ２Ｓｂ２Ｔｅ５薄膜的光学常数与波长关系的影响。结果表明,在波长小于５００ｎｍ的情况下,随溅射功率的增加非晶态薄膜的折射率ｎ先增加然后减小,消光系数ｋ则逐渐减小;在波长大于５００ｎｍ的情况下,随溅射功率的增加折射率ｎ逐渐减少,消光系数ｋ先减小后增加。对于晶态薄膜样品,在整个波长范围折射率ｎ随溅射功率的增加减小后增加,消光系数ｋ则逐渐减少。薄膜样品的光学常数,在长波长范围随波长变化较大,在短波长范围变化较小。讨论了溅射功率对Ｇｅ２Ｓｂ２Ｔｅ５薄膜的光学常数影响的机理。