Ba0.9Sr0.1TiO3薄膜的椭偏光谱研究

用椭偏光谱仪首次在光子能量为2.15.2eV的范围内,测量了不同热处理温度下Ba0.9Sr0.1TiO3(BST)薄膜的椭偏光谱.建立适当的拟合模型,并用Cauchy色散模型描述BST薄膜的光学性质,用最优化法获得了所有样品的光学常数(折射率n和消光系数k)谱及禁带能Eg.比较这些结果,初步得到了BST薄膜的折射率n、消光系数k和禁带能Eg随退火温度变化的变化规律.     

Ba_(0.9)Sr_(0.1)TiO_3薄膜的椭偏光谱研究

用椭偏光谱仪首次在光子能量为２．１～５．２ｅＶ的范围内,测量了不同热处理温度下Ｂａ０．９Ｓｒ０．１ＴｉＯ３（ＢＳＴ）薄膜的椭偏光谱,建立适当的拟合模型,并用Ｃａｕｃｈｙ色散模型描述ＢＳＴ薄膜的光学性质,用最优化法获得了所有样品的光学常数（折射率η和消光系数κ）谱及禁带能Ｅｇ．比较这些结果,初步得到了ＢＳＴ薄膜的折射率η、消光系数κ和禁带能Ｅｇ随退火温度变化的变化规律．     

铌酸锶钡薄膜制备及椭偏光谱研究

用溶胶-凝胶法成功地制备出了退火温度分别为500、600、700、800、900℃的铌酸锶钡(SBN)薄膜;对制备出SBN薄膜分别进行了椭偏光谱测量研究,得到了不同退火SBN薄膜椭偏光谱参数曲线;并对测得的椭偏光谱进行了数值反演计算,得到了不同退火温度的SBN薄膜的光学常数谱.结果发现SBN薄膜的折射率和消光系数都随着退火温度的增高而增大.     

不同衬底上溅射TiO2薄膜的光学性能研究

在硅片和石英上利用射频溅射法沉积了TiO2薄膜,并分别在空气中进行了退火处理。利用椭偏光谱仪对硅片上薄膜进行了椭偏测试,利用紫外-可见分光光度计对石英上薄膜进行了透射光谱测试。利用解谱软件对椭偏谱和透射谱进行了建模解谱,获得了不同基片上薄膜在不同退火温度下的折射指数和消光系数,发现和TiO2块材的光学常数也有明显的区别。通过计算得到了系列薄膜的光学带隙,带隙值范围从3.35～3.88eV,可以为薄膜态TiO2体系的光学应用、设计和相关理论研究提供一定的依据。     

磁控反应溅射制备的Ta2O5薄膜的光学与介电性能

采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。     

Si基片上Ag膜的微结构及光学常数研究

用真空蒸镀法在室温Si基片上制备了Ag薄膜 ,并用X射线衍射及反射式椭偏光谱技术对薄膜的微结构和光学常数进行了测试分析。结构分析表明 :制备的Ag膜晶体仍为面心立方结构 ,呈多晶状态 ,晶粒择优取向于 [111],平均晶粒尺寸约为 2 2 7nm ,晶格常数 ( 0 4 0 860nm)比标准值 ( 0 4 0 862nm)略小。在 2 5 0～ 83 0nm波长范围椭偏光谱测量结果表明 :Ag膜的折射率和消光系数分别在 0 15～ 1 4 9和 0 3 1～ 5 77之间。与块材相比 ,在块材的折射率大于一定值 ( 1 0 0～ 1 3 3 )时 ,Ag膜的折射率比块材的小 ,其余范围则增大 ;Ag膜的消光系数减小。并给出了一套较为可靠的、具有实用价值的Ag薄膜光学常数。     

反应射频磁控溅射法制备HfTaO薄膜的热稳定性和光学性能

采用反应射频磁控溅射技术制备HfTaO薄膜,利用X射线衍射(XRD)分析了薄膜的微结构,通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了薄膜的折射率和禁带宽度,利用原子力显微镜观察了薄膜的表面形貌。结果表明,随着Ta掺入量(10%,26%,50%)的增加,HfTaO薄膜的结晶化温度分别为800、900、950℃,Ta掺入量继续增加到72%,经过950℃退火处理的HfTaO薄膜仍然保持非晶态,具有优良的热稳定性。AFM形貌分析显示非晶HfTaO薄膜表面非常平整。在550nm处薄膜折射率n随着Ta掺入量的增大而增大,n的变化区间为1.90～2.15。同时HfTaO薄膜的光学带隙Eg随着Ta掺入量的增大而逐渐减小,Eg的变化区间为4.15～5.29eV。     

Si基片上Ag膜的微结构及光学常数研究

用真空蒸镀法在室温Si基片上制备了Ag薄膜，并用X射线衍射及反射式椭偏光谱技术对薄膜的微结构和光学常数进行了测试分析。结构分析表明：制备的Ag膜晶体仍为面心立方结构，呈多晶状态，晶粒择优取向于[111]，平均晶粒尺寸约为22.7nm，晶格常数（0.40860nm)比标准值（0.40862nm)略小。在250－830nm波长范围椭偏光谱测量结果表明：Ag膜的折射率和消光系数分别在0.15-1.49和0.31-5.77之间。与块材相比，在块材的折射率大于一定值（1.00-1.33)时，Ag膜的折射率比块材的小，其余范围则增大；Ag膜的消光系数减小。并给出了一套较为可靠的、具有实用价值的Ag薄膜光学常数。     

TiNxOy薄膜的制备及其光学特性

用直流磁控溅射技术在玻璃基底上沉积TiNxOy薄膜。应用XRD与SEM表征了TiNxOy薄膜的晶化程度及表面形貌。在室温下300～900nm的波长范围内测量了薄膜的透射光谱,并根据“包络法”理论,计算了薄膜的光学常数。结果表明,随着入射波长的增加,薄膜的折射率n先减小后再增加;消光系数k单调增加;而吸收系数变化平缓。由“包络法”和Tauc关系确定TiNxOy薄膜的光学能隙约为2．213eV。     

纳米多孔二氧化硅薄膜的制备及其光学性质研究

以正硅酸乙酯(TEOS)为先驱体，采用溶胶-凝胶法，结合旋转涂胶和超临界干燥等工艺，在硅片上制备了纳米多孔SiO2薄膜。XRD和AFM表明该SiO2薄膜为无定形态，具有多孔网络结构，表面均匀平整，其SiO2基本粒子和孔隙的直径为30～40nm。利用椭偏光谱仪测量了SiO2薄膜在波长245～1650nm的椭偏光谱，采用Si／cauchy／rough结构模型对该光谱进行了拟合，获得了SiO2薄膜的厚度和光学常数。SiO2薄膜的厚度为500～1100nm；折射率为1．13～1．21；孔隙率为56％～70％；介电常数为1．9～2．3。     

Effects of annealing temperatures on optical and electrical properties of vacuum evaporated Ga15Se77In8 chalcogenide thin films

The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary parts of dielectric constants) of amorphous and thermally annealed thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses with thickness 4000 Å have been investigated from absorption and reflection spectra as a function of photon energy in the wave length region 400-800 nm. Thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses were thermally annealed for 2 h at three different annealing temperatures 333 K, 348 K and 363 K, which are in between the glass transition and crystallization temperature of Ga₁₅Se₇₇In₈ glasses. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It was found that the optical band gap decreases with increasing annealing temperature. It has been observed that the value of absorption coefficient and extinction coefficient increases while the values of refractive index decrease with increasing annealing temperature. The decrease in optical band gap is explained on the basis of the change in nature of films, from amorphous to crystalline state. The dc conductivity of amorphous and thermally annealed thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses is also reported for the temperature range 298-393 K. It has been observed that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. The dc conductivity was observed to increase with the corresponding decrease in activation energy on increasing annealing temperature in the present system. These results were analyzed in terms of the Davis-Mott model.     

Spectroscopic ellipsometry studies of amorphous PZT thin films with various Zr/Ti stoichiometries

Amorphous stoichiometric Pb(Zr _x Ti_{1 – x)}O₃) (PZT) thin films with various values of x were deposited on Si(100) substrates by the sol-gel technique. The influence of Ti content on the optical properties was studied by spectroscopic ellipsometry (SE) in the UV-visible region. Using a four-phase fitting model, the refractive index n and extinction coefficient k was obtained by analyzing the SE spectra. The optical band gap energies E _g for these films were reported under the assumption of a direct band-to-band transition. It has been found that the refractive index, extinction coefficient and band gap energy of the films were functions of the film compositions. The refractive index of the PZT films increases linearly with increasing Ti content. On the other hand, the optical band gap energy of the PZT films decreases with increasing Ti content.     

Optical and microstructural characterization of sol/gel derived cerium-doped PZT thin films

Optical properties of cerium-doped PZT thin films on sapphire prepared by a sol-gel technique are investigated using both transmission and reflection spectra in the wavelength range 200 to 900 nm. The refractive index, extinction coefficient and thickness of the film are determined from the measured transmission spectra. The packing density of the film is calculated from its refractive index using the effective medium approximation (EMA), and average oscillator strength and wavelength are estimated using a Sellmeir-type dispersion equation. Absorption coefficient (α) and the band gap energy (E_g) of each film composition are also calculated. Possible correlations of microstructure and phase formation behaviour with changes in band gap energy and other optical properties are discussed. This revised version was published online in November 2006 with corrections to the Cover Date.     

Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

We performed spectroscopic ellipsometric measurement to characterize BaSm₂Ti₄O₁₂ (BST) thin films grown on Pt/Ti/SiO₂/c-Si substrate by rf magnetron sputtering. The six BST films were prepared at various deposition temperatures and thermal annealing times. The resulting refractive indices and extinction coefficients of the BST films show only slight change by the deposition temperature but a significant change after thermal annealing, implying the importance of the post annealing process. The increase of the refractive index can be understood by the higher density of the BST films caused by the crystallization after annealing process.     

Annealing dependence of optical properties of Ga20S75Sb5 and Ga20S40Sb40 thin films

Amorphous Ga₂₀S₇₅Sb₅ and Ga₂₀S₄₀Sb₄₀ thin films were prepared onto glass substrates by using thermal evaporation method. The effect of annealing (under vacuum) at different temperatures on the optical parameters was investigated in the temperature range 373-593 K. The optical absorption coefficient (α) for the as-deposited and annealed films were calculated from the reflectance and transmittance measurements in the range 190-900 nm. X-Ray diffraction indicates that the as-deposited films and those annealed up to the glass transition temperature (T_g) exhibit amorphous state. On annealing above the glass transition temperature these films show a polycrystalline structure. Analysis of the optical absorption data indicates that the optical band gap E_g^opt of these films obeys Tauc's relation for the allowed non-direct transition. It was found that the optical band gap E_g^opt increases with annealing temperature up to T_g, whereas above T_g there is a remarkable decrease. The obtained results were interpreted on the basis of amorphous- crystalline transformation.     

Spectroscopic ellipsometry study of Cu2ZnGeSe4 and Cu2ZnSiSe4 poly-crystals

We report the room temperature spectroscopic ellipsometry study of Cu₂ZnGeSe₄ and Cu₂ZnSiSe₄ crystals, grown by modified Bridgman technique. Optical measurements were performed in the range 1.2–4.6 eV. The spectral dependence of the complex pseudodielectric functions as well as pseudo- complex refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity of Cu₂ZnGeSe₄ and Cu₂ZnSiSe₄ crystals were derived. The observed structures in the optical spectra were analyzed by Adachi's model and attributed to the band edge transitions and higher lying interband transitions. The parameters such as strength, threshold energy, and broadening, corresponding to the E₀, E_1A and E_1B interband transitions, have been determined using the simulated annealing algorithm.     

Optical properties of In2O3 films prepared by spray pyrolysis

In₂O₃ thin films have been deposited on glass substrates by spray pyrolysis. InCl₄ was used as the solute to prepare the starting solution with a concentration of 0.1 M. The films were grown at different substrate temperatures ranging from 300 to 400 °C. The as-grown layers were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index, extinction coefficient and other optical parameters. The influence of substrate temperature on these parameters was reported and discussed.     

Influence of ultraviolet irradiation on the optical properties of amorphous Sb10Se90 thin films

Amorphous Sb₁₀Se₉₀ thin films were prepared by thermal evaporation of the bulk glass. The changes in the optical properties (transmittance, optical gap, absorption coefficient, refractive index and extinction coefficient) have been measured in the wavelength range 500-900 nm of virgin and ultraviolet (UV) illuminated films. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It is found that the optical energy gap decreases (photo-darkening) and the refractive index increases with the increase of UV exposure time. The dispersion of the refractive index (n) has been discussed in terms of Wemple-Didomenico single oscillator model. The oscillator energy E₀ and the dispersion energy E_d have been determined and discussed in terms of UV exposure time. The photo-darkening was discussed in terms of some of the current literature models.     

Optical and dielectric properties of double helix DNA thin films

In this work, the thin film of wheat DNA was deposited by spin-coating technique onto glass substrate, and the optical and dielectric properties of the double helix DNA thin film were investigated. The optical constants such as refractive index, extinction coefficient, dielectric constant, dissipation factor, relaxation time, and optical conductivity were determined from the measured transmittance spectra in the wavelength range 190–1100 nm. Meanwhile, the dispersion behavior of the refractive index was studied in terms of the single oscillator Wemple–DiDomenico (W–D) model, and the physical parameters of the average oscillator strength, average oscillator wavelength, average oscillator energy, the refractive index dispersion parameter and the dispersion energy were achieved. Furthermore, the optical band gap values were calculated by W–D model and Tauc model, respectively, and the values obtained from W–D model are in agreement with those determined from the Tauc model. The analysis of the optical absorption data indicates that the optical band gap E_g was indirect transitions. These results provide some useful references for the potential application of the DNA thin films in fiber optic, solar cell and optoelectronic devices.