电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究

基于电泳和半导体工艺,制备了图形化的碳纳米管场发射阴极。用较高的电场激活碳纳米管薄膜,使得碳纳米管的场发射特性有了很大的改善,讨论了这一激活过程的物理机制。研究表明,这一激活过程可能的物理机制一方面是由于碳纳米管薄膜表面形貌发生了变化,增大了碳纳米管的场增强因子;另一方面是由于碳纳米管表面吸附的气体脱附,降低了碳纳米管的表面功函数。电场激活处理后,碳纳米管薄膜的开启电场为2.1 V/μm,应用电场为6 V/μm时,电流密度达到1.19mA/cm2。该图形化的碳纳米管场发射阴极可以应用到高分辨率场发射显示器。     

碳纳米管/二氧化硅复合材料制备及场发射特性研究

采用溶胶-凝胶法制备了碳纳米管/二氧化硅复合材料,并对复合材料的场发射特性进行了研究,结果表明:复合材料有很好的场发射特性,含有10%(质量分数)CNTs的复合材料开启场较低(0.98V/μm).研究了用稀HF溶液处理复合材料表面后场发射性能,发现场发射性能明显改善,开启场由0.98V/μm下降到0.73V/μm,发射电流为1mA/cm2时的电场由2.1V/μm下降到1.0V/μm.研究表明碳纳米管/二氧化硅复合材料非常适用于场发射平面显示器中的阴极.     

一种提高碳纳米管场发射特性方法

针对碳纳米管场发射显示器亮度低、发光均匀性差的问题,提出了氧化锌掺杂的方法.通过将氧化锌(ZBO)颗粒和碳纳米管(CNTs)及其他有机物按比例配成浆料,丝网印刷制作了阴极试样.场发射特性研究结果表明:与具有同样印刷面积的普通CNT试样比较,掺杂试样的开启电场从1.70 V/μm降低到1.17 V/μm;在2.05 V/μm场强下发射电流从185μA上升到510μA.且掺杂氧化锌试样具有较好的发射稳定性和均匀性.通过微观表征和特性测试,初步推断场发射特性的提高的原因:由于混合掺杂试样中氧化锌地填充在碳纳米管之间或者覆盖在顶上,提高了膜层导电性,改善了发射体的热传导性,且增加了有效发射体密度.     

碳纳米管和镓掺杂碳纳米管场发射性能研究

采用催化热解方法分别 制备出碳纳米管和镓掺杂碳纳米管, 并利用丝网印刷工艺将其制备成纳米管薄膜. 对此薄膜进行低场致电子发射测试表明, 碳纳米管和镓掺杂纳米管开启电场分别为2.22和1.0V/μm, 当外加电场为2.4V/μm, 碳纳米管发射电流密度为400μA/cm², 镓掺杂纳米管发射电流密度为4000μA/cm². 可见镓掺杂碳纳米管的场发射性能优于同样条件下未掺杂时的碳纳米管. 对镓掺杂纳米管场发射机理进行了探讨.     

用玻璃粉作粘结剂制备碳纳米管厚膜及其场发射特性

研究了用涂敷法制备的碳纳米管（CNT）厚膜及其场发射特性,裂解法获得的碳纳米管与玻璃粉等混合、研磨,直接涂敷在Si基底上,经烧结后制成碳纳米管厚膜,二极结构测量的结果表明,碳纳米管厚膜有较低的开启电场（1.0～1.25V/μm）,场强为5V/μm时,电流密度达到了50μA/cm^2.该工艺的烧结过程应控制好,加热时间稍长会使CNT厚膜的场发射性能很快下降,时间过长会使CNT处在厚膜表面之下,无法有效发射电子.浆料中的玻璃粉比例增大时,碳纳米管阴极的场发射性能会有所降低.     

碳纳米管／二氧化硅复合材料制备及场发射特性研究

采用溶胶-凝胶法制备了碳纳米管／二氧化硅复合材料，并对复合材料的场发射特性进行了研究，结果表明：复合材料有很好的场发射特性，含有10％（质量分数）CNTs的复合材料开启场较低（0．98V／μm）。研究了用稀HF溶液处理复合材料表面后场发射性能，发现场发射性能明显改善，开启场由0．98V／μm下降到0．73V／μm，发射电流为1mA／cm^2时的电场由2．1V／μm下降到1．0V／ μm。研究表明碳纳米管／二氧化硅复合材料非常适用于场发射平面显示器中的阴极。     

微图形定向碳纳米管场发射阵列冷阴极的研究

本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下：首先在硅（100）基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强化学气相沉积（DC-PECVD）生长直立的碳纳米管。并对17500个发射单元的阵列阴极进行了表面形貌表征及场发射特性测试。结果表明,碳纳米管阵列阴极的一致性较好;最低开启电场为1 V/μm;电场为17 V/μm时,测得的电流密度已达到90 mA/cm^2;发射电流为550μA时,在2.5 h内的波动小于5.6%。     

硅基碳纳米管厚膜的制备及其场发射研究

该文研究了用涂敷法制备碳纳米管(CNT)厚膜的制备和场发射特性,裂解法获得的碳纳米管与玻璃粉等混合、研磨,直接涂敷在Si基底上,二极管结构测量的结果表明,碳纳米管厚膜有较低的开启电场(1.0～1.5v/μm),场强为5V/μm时,电流密度达到了50μA/cm~2。该工艺的烧结过程应控制好,加热时间稍长,会使CNT厚膜的场发射性能很快下降,时间过长会使CNT处在厚膜表面之下,无法有效发射电子。浆料中的玻璃粉比例增大时,碳纳米管阴极的场发射性能会有所降低。     

基于CVD直接生长法的碳纳米管场发射阴极

碳纳米管(CNT)场发射阴极具有启动快、分辨率高、寿命长、功耗小等优点,在多种真空电子设备与器件上,包括平板显示器、真空测量、微波管、X射线管等得到了应用。本文讨论了碳纳米管阴极的主要制备方法以及存在的问题,介绍了基于化学气相沉积法和阳极化工艺、在含催化金属基底直接制备碳纳米管冷阴极所具有强附着力特点,以及应用在X射线管等强流真空电子器件上的优势。文章介绍了在不锈钢基底直接生长CNT阴极的场发射性能,其开启电场为1.46 V/μm。与常规催化金属镀膜层上生长的CNT阴极相比,大电流发射与稳定性显著提高。金属基底阳极化工艺显著改善碳纳米管结构与场发射性能。直径2 cm的不锈钢基底上生长的CNT具有晶体性好、分布均匀等特点,场发射性能提高。在镍基底上生长的CNT阴极电流密度可以达到500 mA/cm~2以上。     

碳纳米管表面化学镀银及场发射性能研究

利用化学镀方法对碳纳米管(carbon nano-tubes,CNTs)表面金属化镀银,研究表面化学镀银碳纳米管的场发射性能。碳纳米管经氧化处理后,表面存在一些羰基(CO)、羧基(—COOH)和羟基(—OH)等活性基团,经敏化、活化处理后,形成金属钯活化中心,进而还原金属银离子,从而获得表面化学镀银的碳纳米管。表面化学镀银碳纳米管阴极的开启电场约为0.19V/μm,当电场强度为0.37V/μm时,最大发射电流达6mA/cm2,场增强因子约为25565。实验结果表明,化学镀银层可以提高碳纳米管的电子传输和热传输能力,提高碳纳米管的场发射电流和发射稳定性,有利于碳纳米管在场发射平板显示领域的应用。     

金刚石微米聚晶结构的生长及其场发射特性研究

在覆盖金属钛层的陶瓷上,利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜.利用扫描电子显微镜、拉曼光谱、X射线衍射,分析了薄膜的结构和表面形貌.测试了类球状微米金刚石聚晶膜的场致电子发射特性.开启电场仅为0.55V/μm,在2.18V/μm的电场下,其场发射电、流密度高达11mA/cm2.对类球状微米金刚石聚晶阵列形成机理和场发射机理进行了研究.     

一种基于CVD法的纳米碳管微观分析及场致发射特性的研究

将化学气相沉积法（CVD）制备的纳米碳管提纯后，用透射电镜（TEM）观测了它的微观结构，通过实验对纳米碳管在不同温度下生长的结构特性进行了分析比较，得出了纳米碳管生长的最佳温度为750℃；并对纳米碳管粉体的拉曼（Raman）光谱进行了分析，得到了与透射电镜观测相一致的结论；最后测试了纳米碳管的场致发射特性．     

Optimization of field emission properties of carbon nanotubes by Taguchi method

It is the purpose of this study to evaluate the field emission property of carbon nanotubes (CNTs) prepared by microwave plasma-enhanced chemical vapor deposition (MPCVD) method. Nickel layer of 5 nm in thickness on 20-nm thickness titanium nitride film was transformed into discrete islands after hydrogen plasma pretreatment. CNTs were then grown up on Ni-coated areas by MPCVD. Through the practice of Taguchi method, superior CNT films with very low emission onset electric field, about 0.7 V/μm (at J = 10 μA/cm²), are attained without post-deposition treatment. It is found that microwave power has the most important influence on the field emission characteristics of CNT films. The increase of methane flow ratio will downgrade the degree of graphitization of CNT and thus its field emission characteristics. Scanning electron microscope and transmission electron microscopy (TEM) observation and energy dispersive X-ray spectrometer analysis reveal that CNT growth by MPCVD is based on tip-growth mechanism. TEM micrographs validate the hollow, bamboo-like structure of the multi-walled CNTs.     

碳纳米管薄膜的制备及场发射特性研究

在镀铝硅片上电沉积Ni催化剂,采用催化热解法制备了多壁碳纳米管薄膜,反应气体为乙炔、氢气和氮气。实验表明在电沉积液中加入正硅酸己酯作催化剂载体并进行退火后处理能有效减小碳纳米管管径．分析表明该纳米管直径在50～70nm间。测试了其场发射特性,其开启场强为8V／μm。最大发射电流密度为2mA／cm^2,已基本满足场发射平面显示器对发射电流密度的要求。     

Tunable field emission properties of carbon nanotube arrays by engineering Fe catalysts

High-quality carbon nanotube (CNT) arrays composed of nanotubes with different diameters and wall numbers were synthesized by water-assisted chemical vapor deposition (CVD) from engineered Fe catalysts. Interestingly, the distribution of nanotube diameter and wall number broadened over 2.5 times as the catalytic Fe thickness increased. The mean diameter and wall number of nanotubes increased monotonically with the Fe thickness, while the calculated CNT area density within an array dropped about 32 times. Field emission measurements revealed that the turn-on voltage for CNT arrays decreased from 3.5 to 2.5 V/µm with the increased catalytic Fe thickness. It was believed that the screening effect from the proximity of neighboring nanotubes has a dominant influence than the CNT diameter on the resulting turn-on voltage.     

电泳沉积碳纳米管场发射阴极研究进展

电泳法是一种工艺简洁、低能耗、低成本的薄膜制备工艺.基于电泳技术的碳纳米管薄膜具有对基底类型和形状要求低、常温操作等优势,尤其适宜于在复杂不规则基底和低熔点材料上的应用.在阐述了电泳法的工艺特点的基础上,本文总结了应用电泳技术制备碳纳米管薄膜的方法,讨论了丰富多样的碳纳米管电泳液制备工艺,介绍了碳纳米管薄膜作为场发射阴极在真空电子领域的应用开发新进展.     

Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH₃ atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH₃. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm^− 1 and a threshold field of 8.96 V μm^− 1 which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics.     

Synthesis and improved electron field emission characteristics of Au-coated nano-carbon needle films

Nano-carbon needle films (NCNFs) coated with a 5-nm Au layer were prepared on p-type Si (100) substrates by means of quartz-tube type microwave plasma chemical vapor deposition (MWPCVD) at different total gas pressures and an electron beam (EB) method. The NCNF deposited at the total gas pressure of 60 Torr had better field emission (FE) characteristics due to the dense structure of carbon sheets, good direction and high density of carbon needles. The FE properties were obviously improved due to depositing Au thin layer on NCNFs. The FE current density at a macroscopic electric field, E, of 10 V/μm was increased from 68.2 mA/cm² to 154.6 mA/cm² and the threshold field was decreased from 2.4 V/μm to 2.1 V/μm for the Au-coated NCNF deposited at the total gas pressure of 60 Torr. The three-region E model was employed to reasonably explain the FE data.     

Improved field emission properties of carbon nanotubes by dual layer deposition

In this paper, we tried to increase the current density of carbon nanotubes (CNTs) by depositing double layer of CNTs instead of single layer. Both the layers of CNTs are deposited by the low pressure chemical vapour deposition technique on silicon substrate with Fe catalyst. Scanning electron microscopic images show the surface morphology of single and double layer of CNTs. Dual layer deposition of CNTs is a very simple and easy method to increase the current density of CNTs based field emitters than other conventional methods. Excellent field emission properties of double layer of CNTs are exhibited with large field enhancement factor and low turn-on voltage as compared to those for single layer of CNTs. High current density of CNTs is required for field-emission-based display devices associated with field enhancement factor and number of emitting electrons. Therefore, we may say that dual layer deposition of CNTs can be utilised as an alternative approach to improve the current density for field emitters. Stability measurement of the samples was also performed for 3 h (180 min) with current at constant applied voltage, and it was found that the stability of dual layer of CNTs is remarkable than that of single layer of CNTs.     

Single crystal TiO2 nanorods: Large-scale synthesis and field emission

A facile growth procedure of low-pressure chemical vapor deposition has been developed to synthesize single crystal TiO₂ nanorods on Ni-coated Ti substrate. The results indicate that the as-prepared nanorods are high purity single crystal with a [110] preferential orientation. Using directly the nanorods as emitters, their field emission (FE) properties have been investigated. The turn-on field of the nanorods decreases from 3.96 V/μm to 2.98, and 2.16 V/μm as the growth temperature increases from 700 °C to 750, and 800 °C, respectively. In addition, the nanorods show good FE stability during 480 min. Such behavior is mainly related to the morphology of nanorods, which depends on the growth temperature. Also, the growth mechanisms of the nanorods are analyzed in detail based on the experimental results.