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用脉冲激光淀积方法在Pt/TiO2/SiO2/Si(001)衬底上制备了掺Ta的PZT薄膜,此薄膜显示了理想的铁电性。漏电流特性表明这种异质结构中Schottky场发射机制起主要作用。扫描电镜形貌照射表明PZT薄膜结晶很好并且异质结构界面无明显扩散。 相似文献
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运用XPS和AES研究了PZT膜/Si在热处理过程中的薄膜及界面化学反应;在热处理过程中,气氛中的气通过PZT的缺陷通道扩散到PZT/Si同旧,并与界面上的硅发生氧化反应形成SiO2界面层。同时基底上的硅通过PZT的缺陷扩散么样品表面形成SiO2表面层。此外,在PZT/Si界面上,Ti的氧化物和Si发生还原反应,形成了TiSix金属硅化物,并残留在PZT膜层和和SiO2界面层中。在PZT膜层内,有 相似文献
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溅射PZT薄膜的晶体结构和快速热处理 总被引:1,自引:0,他引:1
采用常温射频(RF)溅射法和快速热处理相结合的技术,在Pt/Ti/SiO2/Si衬底上,制备出具有铁电性的PZT薄膜。研究了快速热处理工艺条件对PZT薄膜性能的影响。通过Z射线衍射法、SEM和AES等方法,分析了PZT薄膜的晶体结构、微结构、薄膜和电极间的界面效应。 相似文献
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PZT/Si界面氧化反应机理及动力学研究 总被引:1,自引:0,他引:1
运用俄歇电子能谱深度剖析和线形分析研究了PZT/Si界面氧化反应的机理和动力学过程,研究结果表明,在PT/Si样品的热处理过程中,环境气氛中的氧可以透过PZT薄膜层扩散到PT/Si界面,并与硅基底反庆形成SiO2界面层,界面氧化反应由氧在PT层和SiO2层中的扩散过程所控制。 相似文献
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用紫外脉冲激光淀积方法在Pt/TiO2/SiO2/Si(001)衬底上制备了La1-xSrxCoO3/Pb(Ta0.05Zr0.48Ti0.47)O3(PTZT)/La1-xSrxCoO3异质结构薄膜。发现底电极La0.25Sr0.75CoO3可以诱导PTZT薄膜沿(001)方向取向生长。在500kHz和5V的工作电压下铁电电容器La0.25Sr0.75CoO3/PTZT/La0.25Sr0.75CoO3经过5×1010次反转之后,仍保持其初始电极化的96%。此异质结构横截面的扫描电镜照片表明界面上没有明显的因化学反应导致的第二相存在。 相似文献
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采用反向沉淀法制备了Mg(OH)2-ZnO纳米粒子,通过原位聚合和热亚胺化的方法成功制备了不同纳米Mg(OH)2-ZnO粒子质量分数的纳米Mg(OH)2-ZnO/聚酰亚胺(PI)复合薄膜,通过SEM、热重分析、介电谱测试仪和击穿场强测试仪对薄膜的表面形貌、热稳定性、介电性能和击穿强度进行表征和测试。结果表明:Mg(OH)2-ZnO纳米粒子均匀地分散在PI基体中,Mg(OH)2-ZnO/PI热稳定性下降,介电常数、介电损耗和电导率增加,击穿场强随纳米粒子增加先增加后减小,在纳米粒子含量为2%时,达到最大值296 kV/mm。 相似文献
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不同氧氩比例对氧化硅(SiO2)薄膜的结构及性能的影响 总被引:1,自引:0,他引:1
在不同氧氩比例气氛下,采用反应直流磁控溅射方法制备了SiO2薄膜.利用X射线衍射(XRD)、X射线光电子能谱(XPS)、原子力显微镜(AFM)和紫外可见光谱(UV-Visible spectrum)等研究了氧氩比例的不同对SiO2薄膜的晶体结构、化学配比、表面形貌和光学性能的影响.结果显示:室温下,不同氧氩比例的SiO2薄膜都为非晶结构;随着氧分量的增加,Si2p与O1s向高结合能方向移动;在氧分量较大的气氛下,SiO2薄膜的化学失配度较小,薄膜均匀,致密,在400-1100nm有良好的光透过性. 相似文献
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以Pt/Ti/SiO2/Si为衬底,制备了具有电阻转变特性的Ti/La0.7Ca0.3MnO3(LCMO)/Pt结构器件.X射线衍射分析表明LCMO薄膜呈纳米晶或非晶态,扫描电子显微镜及原子力显微镜分析表明LCMO薄膜表面平整、光滑致密.电学测试结果表明Ti/LCMO/Pt结构具有明显的双极型"负"电阻转变特性,低电阻态的导电过程为空间电荷限制电流机制,高电阻态的导电过程为Poole-Frenkel发射机制.利用氧化还原反应的随机性和TiOx中间层空间分布的不均匀性,定性地解释了高电阻态的不稳定性以及电流-电压曲线上的电流突变现象. 相似文献
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Li'an HAN Huaping YANG Yongjun HE 《材料科学技术学报》2008,24(5):709-711
Lattice effect on magnetic and electrical transport properties of Ln2/3Pb1/3MnO3 (Ln=La, Pr, Nd) films prepared by RF magnetron sputtering technique were investigated. With the decrease of the average ions radius 〈rA〉, the structure of Ln2/3Pb1/3MnO3 (Ln=La, Pr, Nd) targets transit from the rhombohedral phase to the orthorhombic phase, and the Curie temperature reduces rapidly with the decrease of 〈rA〉. The electrical properties show that films are the metallic state which can be fitted to the formula: ρ(T)=ρ0 + ρ1T^2 + ρ2T^4.5 at low temperatures. The temperature range of the ferromagnetic metallic state becomes narrow with the decrease of 〈rA〉. The phenomenon can be explained by the lattice effect. 相似文献
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(1-x)Pb[Yb(1/2)Nb(1/2)]O(3)-xPbTiO(3) (PYbN-PT, x=0.5)(001) oriented thin films were deposited onto LaNiO3 (LNO)/Si(001) substrates by sol-gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 °C and 750 °C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 °C/s and high annealing temperature near 750 °C produce the greatest degree of (001) orientation, which gives rise to improved dielectric properties. 相似文献
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The (Zn1-xCox)2-W type barium hexaferrite thin films have been prepared by a radio frequency magnetron sputtering method on the Si (100) and the Si (111) substrates respectively. With increasing the annealing temperatures (800, 850, 900, 950, and 1000 °C), the Ba(CoZn)2Fe16O27 phases emerge from the amorphous matrix. The hexaferrite thin films on Si (111) substrates have a larger saturation magnetic field (636.6 kA/m) than those on Si (100) substrates (159.1 kA/m). The magnetic hysteresis measurements show that they exhibit an isotropic behavior for thin films deposited on both substrates. Films on the Si (111) substrates are magnetically harder than those on the Si (100) substrates. 相似文献
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Luminescent layers are prepared by the implantation of kilo-electron-volt Er ions into tantalum pentoxide (Ta(2)O(5)) thin films made by ion plating. The implantation fluences range from 3.3 × 10(14) to 2 × 10(15) ions/cm(2), and the energies range from 190 to 380 keV. Refractive index, extinction coefficient, and losses on guided propagation are investigated. We show that these Er-implanted layers present an absorption as low as that of the nonimplanted films. When optically pumped with an Ar(+) laser (λ = 0.488 μm) beam, implanted films show peaked fluorescence spectra centered near 1.53 and 0.532 μm. We show that the fluorescence intensity is correlated with the intensity of the pump beam in the region where Er ions are implanted. Radiation patterns of Er ions located inside a single layer or inside a Ta(2)O(5)/SiO(2) dielectric stack made by ion plating are also investigated. We show that, in any case, spontaneous emission of Er ions can be spatially controlled. 相似文献
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采用溶液成膜的方法制备了不同Mg(NO3)2含量的聚乙烯醇(PVA)/Mg(NO3)2复合薄膜。考察了PVA/Mg(NO3)2复合薄膜在相对湿度为54%时的含水量。采用X射线衍射(XRD),差示扫描量热(DSC),动态力学性能(DMA)和力学性能测试方法研究了Mg(NO3)2对PVA膜的结构和性能的影响。结果表明,Mg(NO3)2与PVA的相容性非常好,所制备的PVA/Mg(NO3)2复合膜的透明性好。Mg(NO3)2的加入能显著破坏PVA中的氢键作用,增加PVA膜中的水含量,降低PVA的结晶度,使复合膜的玻璃化温度明显降低。拉伸实验表明,PVA/Mg(NO3)2具有比纯PVA膜更低的拉伸强度和更高的断裂伸长率。 相似文献