新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.     

微波复合介质基板性能研究

采用微扰法、螺旋圆柱谐振法和带状线谐振法分别对聚四氟树脂复合精细电子陶瓷微波复合介质的复介电常数进行了测量与误差分析。基于扫描电子显微镜 (SEM )观察 ,从微观上解释了辊压工艺对介质介电性能一致性改善的原因。研究了不同的表面处理方法对基板金属化剥离强度的影响规律。     

ULSI中的铜互连线RC延迟

随着ULSI向深亚微米特征尺寸发展，互连引线成为ULSI向更高性能发展的主要限制因素。由互连引线引起的串扰噪音及RC延迟限制了ULSI的频率性能的提高，同时考虑到电迁移和功率损耗，人们开始寻找新的互连材料；低电阻率的铜互连材料和低介电常数介质的结合可以有效地发送互连线的性能，主要讨论了互连延迟的重要性以及发送和计算延迟的方法。     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics

The rate of the resistance degradation of doped SrTiO₃ ceramics is investigated as a function of various external and material parameters. The effects of the mutually interrelated parameters dc voltage, dc electric field, and thickness of the dielectric are described by power laws. Electron microscopic potential contrast studies show a Maxwell-Wagner polarization leading to a concentration of the electric field at the grain boundaries during the degradation. Based on this finding, the voltage step per grain boundary, ΔΘ_gb, is introduced as a rate-determining parameter which allows an explanation of the influence of the grain size on the degradation rate as well as the difference in the power laws for ceramic and single-crystal samples.     

Challenges of 22 nm and beyond CMOS technology

It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new devi...     

高介电常数、低介电损耗聚合物复合电介质材料研究进展

高介电常数聚合物电介质材料作为当今信息功能材料的研究热点,具有实际的应用价值和前景。综述了聚合物基复合电介质材料的分类及优缺点,以及从材料微观结构设计和填料界面修饰出发(如三元杂化或设计核壳和三明治结构),来获得高介电常数、低介电损耗聚合物复合电介质材料的研究状况和应用前景,以期对高介电、低损耗聚合物基电介质材料有一个更直观全面的了解,进一步拓展该类材料在电气和生物工程领域的研究和应用。     

AC powder electroluminescent displays

Abstract— The current status of AC powder electroluminescent (ACPEL) displays is reviewed with particular emphasis given to color and lifetime. The printing of the displays in forward and reverse architectures is also discussed, in addition to the fabrication of ACPEL displays with interdigitated electrodes, and different types of ACPEL phosphors and materials for back electrodes, transparent conducting electrodes, binders, and dielectrics are considered. Furthermore, shape conformable and highly flexible ACPEL displays are surveyed.     

Low-temperature sintering and microwave dielectric properties of Li2MgTi3O8 ceramics doped with BaCu（B2O5）

The influences of BaCu(B₂O₅) (BCB) addition on sintering, microstructure and microwave dielectric properties of Li₂MgTi₃O₈ ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu(B₂O₅) addition can effectively reduce the sintering temperature to 900 °C, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of ɛ _r=24.5, Q×f =24 622 GHz, τ _f=4.2×10⁻⁶ °C⁻¹ are obtained for 1.0% BCB-doped Li₂MgTi₃O₈ ceramics sintered at 900 °C for 3 h. The BCB-doped Li₂MgTi₃O₈ ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.     

Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

Thin SiO₂ layers were deposited by atomic layer deposition (ALD) using either Bis-dimethylamino-silane (BDMAS: SiH₂(N(CH₃)₂)₂) or Tris-dimethylamino-silane (TDMAS: SiH(N(CH₃)₂)₃) precursors. The purpose of this study is to evaluate these precursors for their suitability for ALD of hafnium (Hf)-silicate gate dielectrics. The advantages of these precursors are that the melting points and vapor pressures are moderate. The thickness of SiO₂ deposited using ALD process is controlled by the number of growth cycles and the growth rate was different for each precursor, that for BDMAS being 1.5 times that for TDMAS at the same reactor pressure. The carbon impurity in the SiO₂ film deposited using BDMAS was about half an order of magnitude less than that using for TDMAS. Furthermore, the carbon impurity was reduced to about the detection limit of secondary ion mass spectrometry after high temperature annealing at 1000 °C during 5 s.