Characteristics of C_2 Radical in CHF_3 and CF_4 Electron Cyclotron Resonance Plasmas Studied by Optical Emission Spectroscopy

The characteristics of CHF3 and CF4 electron cyclotron resonance (ECR) plasma have been studied by optical emission spectroscopy (OES) and Langmuir probe. It is found that C2 radical is one of main compositions in both of the two plasmas. We investigated the relative concentration of C2 radical as a function of F (H) radical and ion density. The formation mechanism of C2 radical is analyzed.     

纳米多层膜中立方AIN外延生长的HRTEM观察

以亚稳态存在的立方AIN具有很高的硬度、弹性模量、耐磨性、抗氧化性以及高温稳定性等优良的综合力学性能,是一种理想的硬质薄膜材料[1-3].     

Pb1- xLaxTiO3薄膜的制备及介电性质的研究

在Pt/Ti/SiO2/Si(100)衬底上用溶胶－凝胶法制备了Pb1-xLaxTiO3薄膜,对膜进行XRD、SEM、介电、铁电性能测试,研究了退火温度、掺La量对薄膜性能的影响,结果发现在600℃下退火1h的PLT薄膜呈现钙钛矿结构,具有（100）面择优取向。在摩尔比x≤0.2的范围内,薄膜的矫顽场、剩余极化强度都随着掺La量的增加而降低,而其相对介电常数和介质损耗却随着掺La量的增加而增加。     

Pb_(1-x)La_xTiO_3薄膜的制备及介电性质的研究

在Pt/Ti/SiO2/Si(100)衬底上用溶胶-凝胶法制备了Pb1-xLaxTiO3薄膜,对膜进行XRD、SEM、介电、铁电性能测试,研究了退火温度、掺La量对薄膜性能的影响,结果发现在600℃下退火1h的PLT薄膜呈现钙钛矿结构,具有(100)面择优取向。在摩尔比x≤0.2的范围内,薄膜的矫顽场、剩余极化强度都随着掺La量的增加而降低,而其相对介电常数和介质损耗却随着掺La量的增加而增加。     

微波功率对a-C:F薄膜结构和光学性质的影响

用苯 (C6H6)和四氟甲烷 (CF4 )混合气体作源气体 ,用微波电子回旋共振等离子体化学气相沉积技术制备了含氟非晶碳膜 (a C :F)。着重讨论了输入的微波功率对成膜结构和性质的影响。我们对沉积的膜作了膜厚、扫描电子显微表面形貌 (SEM)、紫外 -可见光透射谱 (UV -VIS)、傅立叶红外变换 (FTIR)等的测量。结果表明随着微波功率的增加沉积速率一直在上升 ;同时膜中缺陷增多 ;从FTIR的结果我们发现膜中主要以C -F、CF2 和F -芳基成键 ;通过UV -VIS吸收谱的测量的结果我们求出了折射率和光学带隙 ;并且将光学带隙和膜中的sp2 碳浓度建立关系     

Annealing Temperature dependence of Photoluminescence from Silicon-rich silica Films

1. IlltroductionSince the observation of strong photolumines-cence (PL) of porous silicon [1], a great interest innanocrystalline silicon (nc-Si) has been stimulatedbecause of its potential applications as light-emittingdevices comPatible wlth silicon--based optoelectronicintegrated circults. In recent years, many techniques[2~5], such as sputterlng, laser chemlcal vaPor de-position, Ion implanatation, and plasma enhancedCVD ! have been adopted for preparatlon of nc-Sl em-bedded in the mat…     

The Structure and I-V Property of a-C:F Thin Film

1. IntroductionWith the development of ultralarge-scale integration (ULSI), multilevel interconnections have be-come increasingly important. Interconnection delaycaused by parasitic caPacitance has attracted moreattention than gate delay. Low- die le ct riccon st antmaterials are required to reduce this delay and improve the swiching performance [1~41.An a-C:F thin film can be used as an ideal in-terlayer dielectric material fOr its low dielectric con-stant, good elecrtic proPerty, good ga…     

ZnO:Al透明导电膜的制备及其性能的研究

利用脉冲激光法制备了 Zn O:Al透明导电膜。通过对膜进行霍尔系数测量及SEM、XRD测试分析 ,详细研究了靶材中的化学配比 (掺杂比 )对膜的透光率和电阻率的影响。结果表明 :掺杂比、氧分压强影响着膜的电学、光学性能和膜的结晶状况。从电学分析看出 :掺杂比从0 .75%增至 1 .5%过程中 ,膜的载流子浓度、透光率 (在波长大于 50 0 nm的范围 )和光隙能相应增大。在氧分压强为 0 Pa(不充氧 )、掺杂比为 1 .5%左右时沉积的膜 ,其电阻率达到最小 ,其值为 7.1× 1 0 -4 Ω cm,且在可见光区其透光率超过了 90 %。     

Intermediate Gas Phase of CHa/[Si（CH3）2O]5 Plasma and Its Effect on Structure of SiCOH Film

This paper investigated the radical behaviour of the plasma of a mixture of methane （CH4） and decamethylcyclopentasiloxane （DMCPS） by optical emission spectroscopy. The plasma was generated by electron cyclotron resonance （ECR） discharge and was used for depositing porous SiCOH low dielectric-constant film. In the ECR discharge plasma, CH, H, H2, C2, Si, O and SiO radicals were obtained. The CH, H and C2 radicals were from the dissociation of CH4, while the SiO. Si and O radicals from the dissociation of the Si-O chain. CHx radicals absorbed in the film were thermally unstable and could be removed by annealing. The dissociation of the Si-O chain led to an increase in a ratio of the Si-Ocage to Si-Onetwork. The removed of CHx radicals and the increased Si-Ocage to Si-Onetwork ratio were beneficial for reducing the film density and dielectric constant.