Jet-ICPCVD法制备微晶硅薄膜及其微结构特征研究

Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystalli...     

Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD

Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.     

微波电子回旋共振法沉积的非晶碳化硅薄膜结构和性能研究

非晶碳化硅薄膜的结构可调制性及化学稳定性使它可用作超低k多孔介电薄膜的扩散阻挡层.主要改变了SiH4(80%Ar稀释)和CH4气体流量比R{R=[CH4]/([CH4] [SiH4])},使用微波电子回旋共振化学气相沉积法制备了非化学计量比的非晶碳化硅薄膜(a-Si1-xCx∶H).薄膜沉积过程中放电等离子体的各基团行为由等离子体的发射光谱监测,而薄膜的结构与性能则由傅立叶变换红外光谱、紫外可见光谱等来表征.结果表明,在等离子体发射光谱中H、CH谱线强度随CH4流量的增加而增强,而SiH谱线强度则呈现相反的变化趋势.红外结构表明随着气体流量比R的增加,薄膜由富硅态向富碳态转变,薄膜结构的转变是薄膜光学带隙及其介电常数变化的根本原因.