排序方式： 共有3条查询结果，搜索用时 15 毫秒
1
1.
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystalli... 相似文献
2.
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing. 相似文献
3.
A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations.The basic structure consists of surface plasmon polariton（SPP）interference mask and multi-layer film superlens.Using the amplification effect of superlens on evanescent wave,the near field SPP interference pattern is imaged to the far field,and then is exposed on photo resist（PR）.The simulation results based on finite difference time domain（FDTD）method show that the full width at half maximum（FWHM）of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure.Meanwhile,the focal depth is 150 nm for negative PR and 60 nm for positive PR,which is much greater than that in usual SPP photolithography. 相似文献
1