复杂耦合系统的统计能量分析及其应用

文章综合导纳分析法、经典统计能量分析方法和经典功率流理论的各自优点，提出适合复杂耦合系统的统计能量分析方法，为研究实际机械结构之间的振动传递规律、复杂机械系统的声辐射特性提供理论依据，为实际工程结构的振动隔离、噪声治理提供理论指导。文章首次提出统计能量分析参数必须统一定义，将影响实际机械结构相互之间能量传递的若干要素各自分离，并引入相应的参数分别开展研究。利用理论研究的成果，发展后的统计能量分析首次应用于水下航行器振动和噪声特性分析，预报了水下航行器的振动传递规律和辐射噪声级。理论分析与实验测试结果符合较     

Integrated Personal Mobility Architecture: A Complete Personal Mobility Solution

The high expectations and demand for users to access the Internet from anywhere at anytime has made user mobility an important part of the design and development of the next generation mobile communications and computing. Traditionally user mobility has been divided into two areas: Terminal Mobility and Personal Mobility. In recent years terminal mobility has focused on the movement of the terminal and developed extensions to IP protocols such as Mobile IP. In contrast, personal mobility has only received limited attention, and is somewhat lagging behind. This research has either focussed on personal mobility in communications or personalisation of operating environments. As a result, to date no framework for providing true personal mobility has emerged. In this paper, we introduce a new personal mobility framework called IPMoA (Integrated Personal Mobility Architecture), which integrates both aspects of personal mobility to provide a complete personal mobility solution, and illustrate the viability of this approach through a proof-of-concept implementation.     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

The role of the American Board of Professional Psychology in professional mobility.

This article describes the role of certification by the American Board of Professional Psychology (ABPP) in easing the process by which psychologists move beyond their original jurisdictional boundaries to practice psychology. Meeting the requirements for licensure or certification in the various jurisdictions can be a difficult task because these requirements vary considerably from jurisdiction to jurisdiction. Other mechanisms that are available to facilitate this process include the Certificate of Professional Qualification in Psychology issued by the Association of State and Provincial Psychology Boards and certification by the National Register of Health Service Providers in Psychology. The ABPP certificate/diploma has been regarded by many state psychological associations and state boards of psychology as an appropriate way in which to recognize psychologists who are eligible for licensure/certification in a jurisdiction because of the examination requirements for board certification. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

In-situ doped polycrystalline Si_xGe_1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH₂Cl₂, GeH₄ and B₂H₆ in a H₂ carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C and different B₂H₆ flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible effect of B₂H₆ flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole. Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates and higher B₂H₆ flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved during the deposition process. The results indicate that polycrystalline Si_xGe_1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon.     

Variability in stepping direction explains the veering behavior of blind walkers.

Walking without vision results in veering, an inability to maintain a straight path that has important consequences for blind pedestrians. In this study, the authors addressed whether the source of veering in the absence of visual and auditory feedback is better attributed to errors in perceptual encoding or undetected motor error. Three experiments had the following results: No significant differences in the shapes of veering trajectories were found between blind and blindfolded participants; accuracy in detecting curved walking paths was not correlated with simple measures of veering behavior; and explicit perceptual cues to initial walking direction did not reduce veering. The authors present a model that accounts for the major characteristics of participants' veering behavior by postulating 3 independent sources of undetected motor error: initial orientation, consistent biases in step direction, and, most important, variable error in individual steps. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films

Amorphous SiN_x:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiN_x:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiN_x:H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature.     

Influence of deposition parameters on hole mobility in polymorphous silicon

Time-of-flight transient photoconductivity measurements reveal a monotonic increase with the deposition pressure in the hole mobility in polymorphous silicon for samples deposited under hydrogen dilution. With helium dilution, a maximum mobility that matches the highest value from H-dilution samples is measured at the intermediate pressure of 1.4 Torr. The deposition rate of those samples is twice the rate for the H-dilution ones. For the samples with the best hole mobilities, the valence-band tail is comparable to the one of standard hydrogenated amorphous silicon.