一种基于组移动性的战术Ad Hoc网络分群算法

如何合理地保障分群是战术Ad Hoc网络实现分层网络并进行分群路由的前提和核心环节。针对这个核心问题,引入组移动特征,结合本地移动性参数和节点的能量,面向战术Ad Hoc网络,提出了一种基于组移动性的分群算法,并仿真分析了该算法的分群性能。     

移动家乡代理接入死锁的解决方法

针对网络移动由于家乡代理位于移动网络或本身就是移动路由器而可能出现的接入死锁问题,提出基于接入路由器树状模型和基于树根节点配置移动路由器转交地址的死锁解决方案。分析结果表明,该方案在保障移动网络节点和Internet上任意节点会话连续性的同时,实现了浮动嵌套移动网络节点之间的相互可访问性,而且通信延时、数据包包头损耗率以及网络切换延时与网络移动基本支持协议和返回路由头路由优化方案相比大大减小,嵌套层次越深,端到端通信节省的时间和空间开销越大。     

随机停留点移动模型下AODV路由协议性能仿真

随机停留点移动模型是无线自组网协议性能仿真中常见且广泛使用的移动模型,在仿真过程中存在节点平均移动速度衰减和节点空间分布边界效应问题.讨论分析了造成问题的主要原因,并给出避免节点平均移动速度衰减的方案.最后通过设置不同的节点最大移动速度和节点停留时问这两个移动参数,借助NS-2仿真分析了AODV路由协议性能的变化.仿真结果表明,节点移动速度的变化对AODV路由协议性能影响大,停留时间越长、移动速度越慢,AODV路由协议的分组投递率越大、分组端到端平均传输延时越小.     

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Balancing the contradictory relationship between thermoelectric parameters, such as effective mass and carrier mobility, is a challenge to optimize thermoelectric performance. Herein, the exceptional thermoelectric performance is realized in GeTe through collaboratively optimizing the carrier and phonon transport via stepwise alloying Pb and CuSbSe₂. The formation energy of Ge vacancy is efficiently bolstered by alloying Pb, which reduces carrier density and carrier scattering to maintain superior carrier mobility in GeTe. Additionally, CuSbSe₂, acting as an n-type dopant, further modulates carrier density and validly equilibrates carrier mobility and effective mass. Accordingly, the promising power factor of 45 µW cm⁻¹ K⁻² is achieved at 723 K. Meanwhile, point defects are found to significantly suppress phonons transport to descend lattice thermal conductivity by Pb and CuSbSe₂ alloying, which barely impacts the carrier mobility. A combination with superior carrier mobility and lower lattice thermal conductivity, a maximum ZT of 2.2 is attained in Ge_0.925Pb_0.075Cu_0.005Sb_0.005TeSe_0.01, which corresponds to a 100% promotion compared with that of intrinsic GeTe. This study provides a new indicator for optimizing carrier and phonon transport properties by balancing interrelated thermoelectric parameters.     

Improvisation of Node Mobility Using Cluster Routing-based Group Adaptive in MANET

In today's Internet routing infrastructure, designers have addressed scaling concerns in routing constrained multiobjective optimization problems examining latency and mobility concerns as a secondary constrain. In tactical Mobile Ad-hoc Network (MANET), hubs can function based on the work plan in various social affairs and the internally connected hubs are almost having the related moving standards where the topology between one and the other are tightly coupled in steady support by considering the touchstone of hubs such as a self-sorted out, self-mending and self-administration. Clustering in the routing process is one of the key aspects to increase MANET performance by coordinating the pathways using multiple criteria and analytics. We present a Group Adaptive Hybrid Routing Algorithm (GAHRA) for gathering portability, which pursues table-driven directing methodology in stable accumulations and on-request steering strategy for versatile situations. Based on this aspect, the research demonstrates an adjustable framework for commuting between the table-driven approach and the on-request approach, with the objectives of enhancing the output of MANET routing computation in each hub. Simulation analysis and replication results reveal that the proposed method is promising than a single well-known existing routing approach and is well-suited for sensitive MANET applications.     

5G毫米波通信用低插损高隔离GaAs PHEMT单刀双掷开关

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,实现了一款用于5G毫米波通信的低插损高隔离单刀双掷(SPDT)开关芯片。为了降低插损,每个开关支路通过四分之一波长阻抗变换器连接到天线端,并通过优化传输线和器件总栅宽实现了良好的端口匹配;为了提高隔离度,采用了三并联多节枝的分布式架构形成高的输入阻抗状态,实现信号的全反射。芯片面积为2.1 mm×1.1 mm。在片测试结果显示,在24.25~29.5 GHz的5G毫米波频段内该SPDT开关实现了小于1.1 dB的极低插损和大于32 dB的高隔离度,1 dB压缩点输入功率大于26 dBm。     

Efficient and 1,8-diiodooctane-free ternary organic solar cells fabricated via nanoscale morphology tuning using small-molecule dye additive

The ternary strategy for incorporating multiple photon-sensitive components into a single junction has emerged as an effective method for optimizing the nanoscale morphology and improving the device performance of organic solar cells (OSCs).In this study,efficient and stable ternary OSCs were achieved by introducing the small-molecule dye (5E,5'E)-5,5'-(4',4″-(1,2-diphenylethene-1,2-diyl)bis(biphenyl-4',4-diyl))bis(methan-1-yl-1-ylidene)bis(3-ethyl-2-thioxothia zolidin-4-one) (BTPERn) into poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiopheneco-3-fluorothieno[3,4-b]thiophene-2-carboxylate] (PTB7-Th):[6,6]-phenyl C71 butyric acid methyl ester (PC71BM) blend films processed using a 1,8-diiodooctane (DIO)-free solvent.The incorporation of BTPE-Rn enhanced the short-circuit current density and fill factor of the ternary OSCs compared with those of binary OSCs.An investigation of the optical,electronic,and morphological properties of the ternary blends indicated that the third component of BTPE-Rn not only promoted the photon utilization of blends through the energy-transfer process but also improved the electron mobility of the blends owing to the fullerene-rich nanophase optimization.More importantly,this ternary strategy of utilizing a small-molecule dye to replace the photounstable DIO additive enhanced the operational stability of the OSCs.     

Probing the intrinsic optical quality of CVD grown MoS<Subscript>2</Subscript>

Optical emission efficiency of two-dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameters affecting their optoelectronic performance.The optimization of the growth parameters by chemical vapor deposition (CVD) to achieve optoelectronic-grade quality TMDs is,therefore,highly desirable.Here,we present a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown MoS2 (CVD MoS2).We propose the use of the intensity ratio between the PL measured in air and vacuum as an effective way to monitor the intrinsic optical quality of CVD MoS2.Low-temperature PL measurements are also used to evaluate the structural defects in MoS2,via defect-associated bound exciton emission,which well correlates with the field-effect carrier mobility of MoS2 grown at different temperatures.This work therefore provides a sensitive,noninvasive method to characterize the optical properties of TMDs,allowing the tuning of the growth parameters for the development of optoelectronic devices.