基于序列匹配的自动评分算法设计

通过分析模拟训练设备的操作特点,以序列匹配方法为基础,结合模糊逻辑的思维,设计实现模拟训练设备操作教学考核的自动评分算法.该算法能对学员的操作过程进行自动评分.评分过程和评分结果表明,该算法对模拟设备具有普适性,符合人工评分的要求,能客观反映操作员的操作水平.     

巨磁电阻读出磁头

用巨磁电阻（GMR）材料构成的磁电子学新器件,已开始在计算机存储领域成功地获得了应用,本文介绍了用于计算机硬件磁盘驱动器的巨磁电阻磁头,描术字它的工作原理、性能特点及研究现状和发展趋势。     

Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop with P, = 15 μC/cm2 and Ec = 48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12% . The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 × 10-8 A/cm2 at a voltage of + 4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic "1" and logic "0" at a read voltage of + 2V, and the stored logical value ("1" or "0") could be read out in 30 min.     

Ba_(0.7)Sr_(0.3)TiO_3及其含Pb弥散相铁电体介电性能的研究

用固相反应法制备了Ba_(0.7)Sr_(0.3)TiO_3及其含Pb钛酸锶钡(BPST)陶瓷,运用修正的Smolenski的成分起伏理论和居里外斯定律,结合介电常数温度谱,研究了钙钛矿结构的BST及铅取代的钛酸锶铅钡(BPST)的弥散相,对其相变行为进行了分析,得出了的一些铁电模型参数.结果表明,该系列样品在弥散相变区的弥散指数α为1.29～1.88,相变区间为13.4～22.8℃;在顺电相其居里常量为1.25×10~5～1.47×10~5K数量级.当Pb含量为0.1(即Ba_(0.6)Pb_(0.1)TiO_3)时,居里峰较宽,弥散相明显,故具有较高的调谐温度稳定性.另外铅的加入提高了铁电体的相变温度,从44℃上升到175℃.     

一种新自旋转换配合物的穆斯堡尔谱学研究

应用穆斯堡尔谱研究一种新的自旋转换配合物「Ｆｅ（ＰｈＣＨ＝Ｎｔｒｚ）３」（ＢＦ４）２．３Ｈ２Ｏ的性质及其自旋转换现象等。从穆斯堡尔谱研究显示，该配合物的转换温度在液氮温度以上，并随温度变化配合物的高自旋态和低自旋态有可逆变化。     

Au/PZT/p-Si结构铁电存储二极管的制备及其性能

采用准分子脉冲激光沉积 (PL D)工艺 ,制备了 Au/ PZT/ p- Si结构铁电存储二极管 .在氧气氛 35 0℃低温沉积、原位 5 30℃快速退火工艺条件下 ,获得了多晶纯钙钛矿结构的 Pb (Zr0 .5 2 Ti0 .48) O3(PZT)铁电薄膜 . PZT薄膜的铁电性能测试显示较饱和的、不对称的电滞回线 ,其剩余极化和矫顽场分别为 13μC/ cm2和 48k V/ cm.从C- V和 I- V特性曲线观察到源于铁电极化的回滞现象 ,记忆窗口约 1.1V,+4 V偏压下电流密度为 3.9× 10 - 6 A/cm2 .     

Au/PZT/BIT/p-Si结构铁电 存储二极管I-V 特性

采用脉冲激光沉积方法（PLD）制备了Au/PZT/BIT/p-Si多层结构铁电存储二极管.对铁电存储二极管的P-E电滞回线、I-V特性曲线分别进行了测试与分析,并对其导电行为及基于I-V特性回滞现象的存储机理进行了讨论.实验表明,所制备的多层铁电薄膜具有较高的剩余极化（27μC/cm2）和较低的矫顽场（48kV/cm）,BIT铁电层有助于缓解PZT与Si衬底之间的界面反应和互扩散,减少界面态,与Au/PZT/p-Si结构相比,漏电流密度降低近两个数量级,I-V特性曲线回滞窗口明显增大.     

巨磁电阻在数据存储领域的应用

用巨磁电阻 (GMR)材料构成的磁电子学新器件,已成功地应用于计算机存储领域。介绍了用于计算机硬磁盘驱动器的巨磁电阻磁头和巨磁电阻随机存取存储器,描述了它们的工作原理、性能特点及研究现状和发展趋势。     

Oxygen defects in Fe-substituted Tl-system superconductors

For Fe-doped T1-1223 phase,the excess oxygen defects induced by Fe dopants are studied by means of Hall coefficient,thermogravimetric measurements,Mossbauer spectroscopy,and the model calculation of the effective bond valence.The extra oxygen defects have effects on carrier density and microstructure of the superconductors.In the light doping level of Fe (x=0-0.05),the superconducting transition and carrier density have significant corresponding relation--the zero resistance temperature Tco and carrier densities decrease linearly with Fe dopants increasing.The thermogravimetric measurements show that the Fe3+ ions' substituting for Cu2+ ions can bring the extra oxygen into the lattice to form extra oxygen defects.The calculation of the effective bond valence shows that the decrease of carrier density originates the strongly localized binding of the extra oxygen defects.The distortion of Cu-O layer induced by the extra oxygen defects decreases the superconductive transition temperature.The microstructure     

MEMS器件中的铁电材料

铁电材料在微电子技术、光电子技术和集成光学等多个领域中具有极为重要的应用价值。本文简要介绍了铁电材料及其在MEMS器件方面的应用情况。