基于金属Gd的室温旋转式磁致冷演示样机的设计

磁致冷是利用磁介质在其居里温度Tc附近具有较大磁热效应的特性实现的一种物理现象.以稀土金属Gd为磁致冷材料,对室温旋转式磁致冷演示样机进行了结构设计,演示样机可达4.4K的制冷温跨,用于设计性实验教学,具有良好的示范作用.     

Al对Mg-5Gd镁合金铸态显微组织和相组成的影响

高性能镁稀土合金中常常含有较多的贵重金属Y和Zr,研究用便宜的元素代替贵重元素而不影响力学性能具有重要的意义.利用OM,SEM-EDS,TEM-EDX研究了质量分数为0～1%的Al对Mg-5Gd合金显微组织、相组成的影响.结果表明:少量的Al能显著细化α-Mg枝晶,Gd与Mg形成Mg5Gd化合物,在晶界和晶内均匀分布.Al与合金中的Gd形成高熔点、硬质的、短棒状Al3Gd分布于晶界,并随着Al含量的增加,Al3Gd的数量增加.当Al含量超过0.8%后,Al与合金中的Mg形成脆性的Al12Mg17相,严重降低材料的塑性.     

Er~(3+)∶Y_(0.5)Gd_(0.5)VO_4晶体生长和基本特性

Er3+∶Y0.5Gd0.5VO4晶体作为一种新的激光材料,可以用中频感应加热提拉法生长。X射线衍射分析表明,它的结构与Er3+∶GdVO4晶体结构相同,它的晶格常数介于GdVO4和YVO4晶格常数之间。用ICP光谱法测定晶体中Er3+离子分凝系数为1.06;采用稳态纵向热流法测出晶体c轴的热导率为7.2 W.m-1.k-1。     

Synthesis of Polycrystalline Yb:Gd_3Ga_5O_(12) Nanopowders by Homogeneous Precipitation Method

The Ytterbium doped gadolinium gallium garnet [Yb3+:Gd3Ga5O12, Yb:GGG] precursor powders were synthesized via homogeneous precipitation method using Yb2O3, Ga2O3, Gd2O3 and ammonium bicarbonate [NH4HCO3] as precipitator, and ammonium sulfate [(NH4)2SO4] as additive. The evolution of phase composition and micro-structure of the powders were characterized by TG- DTA, XRD, IR, and TEM. The results indicate that all precursor powders completely transform to Yb:GGG phase by calcining at 900 ℃ for 8 h, the resultant powders are well dispersed and have smaller particle size approximately 80 nm owing to the electrostatic effect.     

Ce、Gd、Ce/Tb、Gd/Tb单双掺杂ZCB基质光致发光性质

采用高温固相法在弱还原气氛下,分别合成了单掺Ce3+、Gd3+和双掺Ce3+/Tb3+、Gd3+/Tb3+的ZnO-CdO-B2O3(ZCB)基质系列荧光体.光谱分析表明:Ce3+的5d→4f(2F7/2,2F5/2)和Gd3+的8P7/2→8S7/2跃迁的强发射分别对应于427 nm和574 nm,而Ce3+/Tb3+和Gd3+/Tb3+的强发射分别对应于546 nm和548 nm.双掺Ce3+/Tb3+、Gd3+/Tb3+的荧光体比单掺Tb3+的发射强度显著增强,这表明存在Ce3+→Tb3+、Gd3+→Tb3+的能量传递,且Ce3+和Gd3+都是Tb3+的优异敏化剂.     

钆内嵌金属富勒烯的制备、分离及质谱表征

利用自制的电弧炉,通过电弧放电法合成了内嵌金属富勒烯Gd@C82,研究并获得了制备钆金属富勒烯的最佳工艺条件：摩尔比Gd：C=1：15,电流I=90～100A,氦气压力0．08MPa;探讨并获得了Gd@C82新的萃取分离条件：常温下以DMF为溶剂,抽真空至压强为0．01MPa下萃取;讨论了内嵌金属富勒烯的生成和分离机理。     

热处理对γ-TiAl合金中Gd化合物的影响研究

针对含0.15%（原子分数）稀土元素Gd的变形γ-TiAl合金,研究1 300℃/0.5h/空冷热处理前后稀土化合物种类、形态和分布变化。变形γ-TiAl合金中存在两种稀土化合物,分别是富Al元素的Al-Gd化合物和富O元素的O-Gd化合物。在热处理过程中Al元素向Al-Gd化合物边缘扩散,基体的Ti、O元素向Al-Gd化合物扩散,因此部分Al-Gd化合物转变为由Al-Gd包围O-Gd的包裹状化合物。热处理后,Al-Gd化合物球化、尺寸减小、数量减少,体积分数由2.78%减少至1.13%,O-Gd化合物数量增加但形貌基本不变。     

A thin-layer reference material for hydrogen analysis

In many areas of material sciences, hydrogen analysis is of particular importance. For example, hydrogen is most abundant as impurity in thin film materials - depending on the deposition process - and has great influence on the chemical, physical and electrical properties of many materials. Existing bulk reference materials (RMs) are not suited for surface sensitive analytical methods like elastic recoil detection analysis (ERDA) or nuclear reaction analysis (NRA). To overcome this serious lack of (certified) thin-layer reference materials for the determination of hydrogen in the near-surface region (1-2 μm depth), we produced stable, homogeneous amorphous silicon layers on Si-wafers (aSi:H-Si) by means of chemical vapour deposition (CVD), while about 10% of hydrogen was incorporated in the Si-layer. Homogeneity and stability were proved by NRA whereas traceability of reference values has been assured by an international interlaboratory comparison.     

质子轰击Gd、Eu和Nd引起的L亚壳层电离

用0.4—2.75MeV质子轰击稀土元素Gd、Eu和Nd靶,测得L亚壳层的X射线产生截面。利用亚壳层的荧光产额和Coster-Kronig跃迁几率的半经验值,求得2S_(1,2)、2P_(1/2)和2P_(3/2)三个亚壳层的电离截面。实验测得的电离截面以及它们的比值与ECPSSR理论预言值进行了比较。