Effect of microstructure on the electrochemical performance of Ni-ScSZ anodes

The effects of NiO powder morphology and sintering temperature on the microstructure and the electrochemical performance of Nickel-scandia-stabilized zirconia (Ni-ScSZ) cermet anodes for solid oxide fuel cells (SOFCs) were investigated. The particle size and agglomeration of the starting powders were found to affect both the microstructure and electrochemical performance of the Ni-ScSZ cermet anodes. The lowest polarization resistance, 0.690 Ω cm² at 700 °C, was measured for the Ni-ScSZ anode prepared with fine NiO powder (~0.5 µm grain size). This was attributed to the increase in the number of reaction sites afforded by the small grains and well-dispersed Ni and ScSZ phases. The effect of the anode sintering temperature was also found to affect the anode microstructure, adhesion with the electrolyte, and consequently anode polarization resistance. The lowest polarization resistance was observed for the anode sintered at 1400 °C and this was 3–5 times lower than the corresponding values for anodes sintered at lower temperatures.     

红色荧光粉Ca_3Y_2Si_3O_(12):Eu~(3+)的制备及发光特性

采用高温固相法合成了红色荧光粉Ca_3Y_2Si_3O_(12):Eu~(3+)。研究了Eu~(3+)离子掺杂浓度、助熔剂及Gd~(3+)共掺杂对荧光粉发光特性的影响。XRD检测结果显示,荧光粉的主晶相为Ca_3Y_2Si_3O_(12),属单斜晶系。荧光光谱分析表明:硅酸盐荧光粉Ca_3Y_2Si_3O_(12):Eu~(3+)的发射光谱包含2个主峰,峰值分别位于590和614 nm,归属于Eu~(3+)离子从~5D_0→7~F_1和~7F_2的特征跃迁。用614 nm最强峰监测,得到激发光谱为一多峰宽带(200~500 nm)。改变Eu~(3+)离子掺杂浓度发现:随着掺杂量增加,荧光粉发光强度先增加后降低,最佳掺杂量为20 mol%;讨论了几种助熔剂的影响:NaCl、CaF_2作为助熔剂,对荧光粉的发光强度影响不大,H_3BO_3作为助熔剂降低荧光粉的发光强度,而NH_4F能显著提高荧光粉的发光强度;Gd~(3+)可以作为一种很好的共激活剂,敏化Eu~(3+)离子发光。     

制备Nd3+:Gd3 Ga5O12透明陶瓷的纳米粉体

由于激光晶体的生长周期长、成本高等缺点,激励人们不断地探索新的激光材料。透明陶瓷就是最近发展起来的一种。采用溶胶-凝胶法合成了用于制备掺钕的钆镓石榴石(Nd3 ∶Gd3Ga5O12)透明激光陶瓷的多晶纳米粉体。采用X射线衍射(XRD)和扫描电子显微镜(SEM)对样品的晶相和形状进行了分析。结果表明,温度为1000℃,灼烧12 h,获得单分散、形状规则、似球形的Gd3Ga5O12(GGG)纳米粉体,且随着烧结温度的提高前驱粉体粒度不断增加。荧光发射的最强峰位于1062.7 nm处,对应于Nd3 的4F3/2→4I11/2能级跃迁。     

电化学方法制备单一稀土金属钆薄膜

研究室温下在熔盐体系中用电沉积方法于铜基体上沉积单一金属钆,分析了沉积液中主盐的含量、电流密度、电沉积时间及沉积液的pH值选择等工艺参数对沉积薄膜的形貌和金属Gd含量的影响.经X射线能谱仪(EDS)测定,其中Gd的质量分数为93.56%;经扫描电子显微镜(SEM)观察所得沉积薄膜为均匀、光滑、致密的银白色沉积膜;经X射线衍射仪(XRD)分析,所得沉积薄膜的晶体结构为立方晶;通过X射线光电子能谱仪(XPS)对沉积薄膜表面价态分析,证明所得沉积薄膜为单一稀土金属钆.用聚乙烯醇保护膜涂覆可以使稀土沉积薄膜免于氧化.     

溶胶-冷冻法制备纳米Gd2O3:Eu3+发光材料

采用溶胶-冷冻法合成了粒径为20nm左右的近似于球形的Gd2O3：Eu^3＋发光材料.XRD和FTIR分析表明：所合成的前驱体样品为带有结晶水的晶态氢氧化物,经过热处理后得到了立方相的Gd2O3.荧光光谱测试表明：所合成的样品具有良好的Eu^3＋特征红光发射,Gd^3＋到Eu^3＋之间具有有效的能量传递过程.随着灼烧温度的升高,发射峰和激发峰的强度有所增强,荧光寿命变长,这是由于热处理温度升高,晶体生长变好,表面缺陷减少,使表面的猝灭中心减少,从而提高了荧光强度和荧光寿命.     

Structure and Bonding in Some Gd（Ⅲ） Metal Complexes Studied by Three-Dimensional X-Ray Analysis and ^155Gd Mossbauer Spectroscopy

Some functional lanthanide metal complexes, such as acetylacetonato complexes, ethylenediaminetetraacetato complexes, were successfully applied for diagnostic technique. The authors are interested in investigating the structure and bonding in lanthanide and actinide metal complexes using 166Er, t55Gd, and 237Np Mtissbauer spectroscopies in connection with single-crystal and/or powder X-ray diffraction, making clear the differences on their structures as well as the differences in the participation of 4f and 5f orbitals in the chemical bonds. In this article, the crystal structures of two novel Gd（Ⅲ） acetylacetonato complexes, Gd（pta）3 · 2H2O （pta = 1,1,1 -trifluoro-5,5-dimethy 1-2,4-hexanedione） and Gd（bfa）3 · 2H2O （bfa = 1, 1, 1 -trifluoro-4-phenyl-2-4-butanedione） were reported. Though both of them were dihydrate and had distorted square antiprismatical structure, Gd（pta）3 · 2H2O crystallizes in the P 2 1/n （#14） monoclinic space group and its lattice parameters are a = 1.4141（6） nm, b = 1.0708（3） nm, c =2.2344（4） nm, β =952.4（2）°, and Gd（bfa）3· 2H2O crystallizes in P 212121 orthorhombic space group and its lattice parameters were a = 1.322 （1） nm, b = 2.295 （1） nm, c = 1. 0786（8） nm. In the meantime, the authors had finished a systematic investigation on the ^155Gd Mossbauer isomer shift （δ） of various Gd（Ⅲ） metal complexes having a different coordination number （C.N.） and different ratios coordinating oxygen to nitrogen. A tendency for the 6 value to decrease with an increase in the C.N, and the number of the nitrogen atom coordinating to Gd was confirmed. This indicated that the Gd-O and/or Gd-N bond in the investigated Gd（Ⅲ） metal complexes had a small covalent contribution, which was possible to be deduced from the O and/or N atoms of the lisands donating electrons to 6s, 5d, and 4f orbitals of Gd.     

Structure and Waveguide Properties of Sol-Gel Derived Gd2O3 Films

Pure and rare earth doped gadolinium oxide (Gd2O3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd2O3 films annealed at different temperature was investigated by X-ray diffraction and transmission electron microscopy. Oriented growth of (400) face of Gd2O3 has been observed when the films were deposited on amorphous substrate. The refractive index and thickness of films were determined by m-lines spectroscopy. The laser beam (λ= 632.8 nm) was coupled into the film by a prism coupler and the propagation length is about 3.5 cm. Luminescence properties of europium ions doped films were measured by waveguide fluorescence spectroscopy, which shows disordered environment for Eu^3 at 400℃.     

复合助烧剂对Gd2O3-UO2芯块微观结构的影响

Gd2O3-UO2可燃毒物燃料是近年来核电站采用较为普遍的可燃毒物之一。本文研究了在Gd2O3-UO2芯块中添加A12O3、TiO2、V2O5各150μg／g的复合助烧剂对芯块微观结构的影响。研究表明添加复合助烧剂后可以降低Gd2O3-UO2芯块的致密化温度．在H2气氛中，1500℃烧结4h后的Gd2O3-UO2芯块的密度可达～97％TD，芯块的闭口孔在1400～1750℃整个温度范围内一直呈下降趋势．烧结温度为1750℃时芯块中气孔数量比1600℃时减少．但单个气孔体积增大．其主要机制可能是小气孔之间发生融合。添加助烧剂后，在1400～1600℃温度之间晶粒生长速度出现不一致．部分晶粒开始迅速生长，晶粒大小分布出现双峰现象；当温度为1750℃时，晶粒大小分布为正态分布．双峰现象消失，平均晶粒尺寸约为25μm。     

Characterization of (Y,Gd) BxV1-xO4-x:Eu Phosphor Prepared by Coprecipitation Reaction

White body-color (Y, Gd)BxV1- xO4-x :Eu3 phosphors were prepared by coprecipitation reaction. Under VUV excitation at 147 nm, the red emission colorimetric purity of (Y, Gd)BxV1- xO4-x :Eu3 phosphor is much better than that of commercial PDP (plasma display panels) phosphor (Y, Gd)BO3:Eu3 . But its relative emission intensity is only about 90% of the commercial phosphor.     

新型钒酸盐混晶Nd∶Gd_(0.42)Y_(0.58)VO_4/Cr~(4+)∶YAG被动调Q锁模特性研究

研究了Nd∶Gd0.42Y0.58VO4混晶的激光运转特性。采用Cr4+∶YAG晶体作为被动可饱和吸收体,实现了Nd∶Gd0.42Y0.58VO4混晶的调Q锁模激光运转。实验测量了不同Cr4+∶YAG初始透过率情况下激光器的输出特性。在Cr4+∶YAG初始透过率T0=86.3%,输出镜透过率T=10%时,调Q锁模运转阈值为2.8 W,随着抽运功率的增加,调制深度逐渐加大。采用透过率T=20%的输出镜,注入抽运功率10.3 W时,调Q锁模深度约为70%,相应的脉冲包络重复频率为40 kHz,半高宽度为25 ns,平均输出功率为2.58 W,光-光转换效率为25%。