Achieving excellent energy storage density of Pb0.97La0.02(ZrxSn0.05Ti0.95-x)O3 ceramics by the B-site modification

The applications of antiferroelectric (AFE) materials in miniaturized and integrated electronic devices are limited by their low energy density. To address the above issue, the antiferroelectricity of the reinforced material was designed to improve its AFE-ferroelectric (FE) phase transition under electric fields. In this present study, the composition of Zr⁴⁺ (0.72 Å) and Ti⁴⁺ (0.605 Å) at B-site of Pb_0.97La_0.02(Zr_xSn_0.05Ti_0.95-x)O₃ ceramics with orthogonal reflections are synthesized via the tape-casting method. These ceramics are modified to enhance their antiferroelectricity by reducing their tolerance factor. A recoverable energy storage density W_rec 12.1 J/cm³ was obtained for x = 0.93 under 376 kV/cm, which is superior value than reported until now in lead-based energy storage systems. Moreover, the discharge energy density can reach 10.23 J/cm³, and 90 % of which can be released within 5.66 μs. This work provides a new window and potential materials for further industrialization of pulse power capacitors.     

A novel approach for bulk micromachining of 4H-SiC by tool-based electrolytic plasma etching in HF-free aqueous solution

Bulk micromachining of single-crystal SiC has been challenging due to its extreme stability both mechanically and chemically. To address this issue, a novel tool-based electrolytic plasma etching method is proposed, with which micropatterns and micro-holes are fabricated in SiC in a hydrofluoric acid-free aqueous solution with no need for masks. The material removal is the result of the combined effects of electrolytic plasma chemistry and physics. The chemistry refers to the reaction of Si with hydroxyl radical to form various SiO_x and with H to form silanes, and the reactions of C to form volatile carbon oxides or hydrocarbons, all of which are accomplished and enhanced under the electrolytic plasma atmosphere. Besides, the local high temperature of plasma thermally promotes the evaporation or dissolution of SiO₂ in NaOH solution. The tool-based electrolytic plasma etching method provides alternative approaches for the fabrication of SiC-based MEMS and devices.     

不同盐沼湿地类型脱氮除磷效能及影响因素分析

采用沉水植物表面流湿地(沉水组)、挺水植物表面流湿地(挺水组)和浮床湿地(浮床组)3种盐沼湿地对长江口近岸低污染水体进行脱氮除磷效能的研究。结果表明,HRT为3 d时,水组、挺水组、浮床组对NO3^--N的去除率在高温时段分别为79.9%±13.2%、71.8%±15.2%、77.2%±13.2%,中温时段分别为39.4%±13.7%、31.5%±8.5%、18.4%±16.6%,低温时段分别为15.6%±14.6%、19.7%±8.6%、2.%5±8.6%。沉水组和挺水组对TP的去除率受温度影响较小,分别为66.4%±32.4%、55.5%±29.4%;而浮床组除磷效果受温度影响较大。当HRT缩短为1.5 d时,3组湿地系统在高温时段仍可达到相近的脱氮除磷效果,在中低温时段脱氮除磷效果都有不同程度的下降。     

Electrodeposition of B,Ni co-doped diamond-like carbon films on AZ91D magnesium alloy: Corrosion and wear resistance

Diamond-like carbon (DLC) possesses brilliant and excellent properties, including excellent corrosion resistance as well as outstanding wear resistance. Ni and B co-doped DLC films were deposited on AZ91D magnesium alloy by electrodeposition under mild conditions (300 V and 25°C). Uniform and dense morphology of co-doped DLC films were observed, and Ni and B were uniformly incorporated into the carbon-based films. Among all the electrodeposits, the appearance of D and G peaks near 1330 and 1570 cm⁻¹ revealed that the as-deposited films were typical DLC films. As the addition of Ni was increased to 0.05 g, the highest microindentation hardness, the lowest friction coefficient, and wear loss were achieved to be 164.5 HV, 0.3, and 0.6 × 10⁻⁵ kg/m, respectively. The amorphous carbon films fabricated at 0.05 g Ni had the lowest corrosion current density and the most positive corrosion potential, which was mainly due to the small and dense granular structure effectively hindering the penetration of corrosion media.     

高熵形状记忆合金的研究进展

高熵形状记忆合金是在等原子比NiTi合金的基础上,结合高熵合金的概念,逐渐发展起来的一种新型高温形状记忆合金。近年来,已开发出了综合性能优异的(TiZrHf)50(NiCoCu)50系和(TiZrHf)50(NiCuPd)50系高熵形状记忆合金,引起了广泛的关注和研究兴趣。本文从物相组成、微观组织、马氏体相变行为、形状记忆效应和超弹性等角度出发,综述了高熵形状记忆合金的研究进展,并对高熵形状记忆合金未来的研究重点进行了展望。     

Phase,domain, and microstructures in Sr2+ substituted low-temperature sintering PZT-based relaxor ferroelectrics

The Ag-Pd internal electrode of multilayer piezoelectric ceramics needs to be sintered below 1000°C, and lead wires and components need to be welded with lead-free solder at 260°C. PNN–PMW–PZT–xSr piezoelectric ceramics with high Curie temperature (T_c > 260°C) were synthesized at a low sintering temperature (960°C) to meet the requirements of multilayer piezoelectric devices. The relationship between structures (phase, domain, and microstructures) and electrical properties (piezo/ferroelectric properties, and dielectric relaxation) in the Sr²⁺ substituted ceramics was investigated. Rietveld refinement and Raman spectra show that Sr²⁺ substitution can cause the phase change and increase the force constant of [BO₆] octahedron. The piezoelectric response increases with increasing the content of the tetragonal phase (CTP) in the rhombohedral-tetragonal (R-T) coexisted ceramics. The ceramics with 0.6 mol% Sr²⁺ substitution have minimum activation energy for domain wall movement (E_a) of 0.0362 eV which favors the formation of nanometer-sized domains, and possess excellent electrical properties (d₃₃ = 623 pC/N, d₃₃^* =783 pm/V, T_c =295°C). The higher the CTP, the lower the E_a. The lower E_a favors the rotation of polarization direction and extension, and is beneficial to the generation of the nanometer-size domains, resulting in high piezoelectric properties.     

Nonstoichiometric effect of A-site complex ions on structural,dielectric, ferroelectric,and electrostrain properties of bismuth sodium titanate ceramics

To investigate the nonstoichiometric effect of (Bi_0.5Na_0.5)TiO₃ (BNT) ceramics on their properties, we propose a novel chemical expression, (Bi_0.5+xNa_0.5−3x)TiO₃. The nonstoichiometric effect of BNT can be explored in compounds with this composition without being hampered by the charge imbalance problem. With x ranging from −0.02 to 0.02, we find that the morphological, dielectric, ferroelectric, and electrostrain properties differ considerably between Na-rich and Bi-rich ceramic samples. The average grain size (AGS) increased significantly in Na-rich samples compared to that in stoichiometric BNT, while it decreased slightly in Bi-rich samples. The dielectric characteristics measured from 30 °C to 500 °C indicate that conductivity is activated in Na-rich nonstoichiometric samples but is effectively suppressed in Bi-rich nonstoichiometric samples. The ferroelectric properties also show the same trend. In Na-rich samples, elliptical polarization against electric field (P-E) hysteresis loops were detected, indicating a conductive character induced by high electric field loading. However, saturated P-E loops are observed in Bi-rich samples with well-inhibited conductivity. Furthermore, compared to stoichiometric BNT and nonstoichiometric x = 0.02 Bi-rich samples, (Bi_0.5+xNa_0.5−3x)TiO₃ samples with x = 0.01 exhibit higher electrostrain from 30 °C to 150 °C. Based on the assumption of charge balance, our findings indicated that the presence of 1 mol% excess Bi would facilitate significant improvement in the dielectric, ferroelectric, and electrostrain properties of BNT and BNT-based systems.     

Stress field and damage evolution in C/SiC woven composites: Image-based finite element analysis and in situ X-ray computed tomography tests

The construction and examination of meso-structural finite element models of a Chemical-Vapor-Infiltrated (CVI) C/SiC composite is carried out based on X-ray microtomography digital images (IB-FEM). The accurate meso-structural features of the C/SiC composites, which are consisted of carbon fiber tows and CVI-SiC matrix, in particular the cavity defects, are reconstructed. With the IB-FEM, the damage evolution and fracture behaviors of the C/SiC composite are investigated. At the same time, an in situ tensile test is applied to the C/SiC composite under a CT real-time quantitative imaging system, aiming to investigate the damage and failure features of the material as well as to verify the IB-FEM. The IB-FEM results indicate that material damage initially occur at the defects, followed by propagating toward the fiber-tow/SiC-matrix interfaces, ultimately, combined into macro-cracks, which is in good agreement with the in situ CT experiment results.