MgF2氧化现象的X射线衍射研究

采用X射线衍射方法，研究高稳定化学结构的MgF2在30％Ag（质量分数，下同）掺杂下，在低真空中（≥30Pa）高温（≥600℃）烧结后，氧化成为MgO的过程。在烧结温度为600℃，恒温时间为2h时，XRD出现d为24326,2.1065,1.4896A的MgO衍射峰。随着烧结温度升高，MgF2的衍射峰逐渐减弱减少，MgO的衍射峰则逐渐增强增多。到1250℃时，MgF2的衍射峰全部消失。然而，将MGf2-30%Ag样品在高真空中（＜10^-3Pa)1000℃烧结，恒温2h，未观察到MgF2有氧化现象。如果将纯MgF2样品在开口高温炉中（即大气中）1000℃烧结，仅发现3个较弱的MgO衍射峰（相应的d值为2.1008,1.4882,1.0525A),MgF2衍射峰全部出现。讨论了MgF2的氧化机理，指出Ag在MgF2的氧化过程中起了中间媒介作用。     

Na掺杂量对ZnO薄膜AFM图像多重分形谱的影响

用溶胶-凝胶法在Si（111）基片上制备Na掺杂ZnO薄膜,利用原子力显微镜（AFM）观察薄膜的表面形貌,采用多重分形理论定量表征薄膜的AFM图像。结果显示：随着Na含量的增加,薄膜平均颗粒尺寸逐渐增大,表面RMS粗糙度从7.4 nm增大到44.4 nm,分形谱宽Δα从0.059增大到0.200,说明薄膜表面高度分布不均匀程度逐渐增大;所有样品的Δf值均大于零,表明薄膜表面沉积于最高峰的原子数多于最低谷的原子数。     

Influence of dopant content on morphology and optical constants of ZnO: Na films by sol-gel method

Undoped and Na-doped ZnO films were deposited by sol-gel method. The effects of sodium incorporation on structure, surface morphology and optical constants of the films were investigated. X-ray diffraction patterns show the hexagonal wurtzite polycrystalline structure and that the sodium incorporation leads to the change in the structural characteristics of ZnO films. The SEM observations show that the surface morphology of the films is affected by the sodium incorporation. The transmission spectra show that the average transmittance of the films is above 85% in the visible range. The absorption edge initially blue-shifts and then red-shifts with the increase of Na doping content. The optical constants of these films were calculated using transmission spectra. Refractive indices of the films in the visible range decrease at first and then increase with increasing Na doping content.     

Dy3+ activated LaVO4 films synthesized by precursors with different solution concentrations

Using different-solution-concentration precursors with citric acid as chelating agent and polyvinyl alcohol as dispersing media, Dy3+ activated LaVO4 films were deposited on indium tin oxide (ITO) substrates. The scanning electronic microscope (SEM) showed that the compact and crack-free LaVO4:Dy3+ film could be obtained at a suitable solution concentration. The deposited films could absorb the ultra-violet light below 400 nm and were transparent in the visible and infrared region as evidenced by the transmission spectra, and the photolumines-cence spectra exhibited the characteristic emissions of Dy3+ peaking at 484 (blue) and 576 (yellow) nm due to the transitions of 4F9/2→6H15/2 and 4F9/2→6H13/2, respectively. The potential application of LaVO4:Dy3+ film in the dye-sensitized solar cell (DSSC) was also discussed.     

Influence of soaking time on nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics

The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO₂-based varistor ceramics was investigated. Based on single sintering process, six disk samples of (Sr, Bi, Si, Ta)-doped TiO₂-based varistor ceramics were fabricated by sintering at 1 250 °C for 0.5–5.0 h. The samples were characterized by X-ray diffraction, voltage-current characteristics, energy spectra, metallographs, breakdown voltages, and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cm² decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm, the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42, and the apparent dielectric constant increases from 98 200 to 115 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0–3.0 h considering both nonlinear electrical behavior and dielectric properties.     

在Si基底上真空蒸发沉积Ag-MgF2复合薄膜的内应力研究

报道了用电子薄膜应力分布测试仪测量了不同温度、不同厚度的Ag-MgF2复合薄膜的内应力变化情况，得到了基底温度(退火温度)在300～400℃范围内薄膜平均应力最小，且处于张应力向压应力转变区城。XRD分析表明，在Ag-MgF2复合薄膜中Ag对复合薄膜内应力的影响大于MgF2。     

膜用Ag—MgF2金属陶瓷体的真空烧结

介绍了供薄膜制备用的Ａｇ—ＭｇＦ２金属陶瓷体的真空烧结过程，组分Ａｇ的偏析，空隙率与组分比以及温度之间的关系，得到了保证Ａｇ—ＭｇＦ２体系组分比的制备条件。     

Si基片上Ag膜的微结构及光学常数研究

用真空蒸镀法在室温Si基片上制备了Ag薄膜 ,并用X射线衍射及反射式椭偏光谱技术对薄膜的微结构和光学常数进行了测试分析。结构分析表明 :制备的Ag膜晶体仍为面心立方结构 ,呈多晶状态 ,晶粒择优取向于 [111],平均晶粒尺寸约为 2 2 7nm ,晶格常数 ( 0 4 0 860nm)比标准值 ( 0 4 0 862nm)略小。在 2 5 0～ 83 0nm波长范围椭偏光谱测量结果表明 :Ag膜的折射率和消光系数分别在 0 15～ 1 4 9和 0 3 1～ 5 77之间。与块材相比 ,在块材的折射率大于一定值 ( 1 0 0～ 1 3 3 )时 ,Ag膜的折射率比块材的小 ,其余范围则增大 ;Ag膜的消光系数减小。并给出了一套较为可靠的、具有实用价值的Ag薄膜光学常数。     

退火温度对硅基溅射铜膜应力的影响

采用光学相移法 ,对Si基片上Cu膜应力随退火温度的变化进行了研究。研究表明 :随退火温度的升高 ,Cu膜应力减小 ,2 0 0℃时平均应力减小为 - 0 2 6 1× 10 8Pa,且应力分布均匀 ,在选区范围内应力差仅为 2 2 4 4× 10 8Pa。同时用X射线衍射技术测量分析了Cu膜经过不同退火温度热处理后的微结构组织 ,研究了Cu膜的微结构对其应力的影响     

Ag-MgF2金属陶瓷薄膜的制备及其微观结构研究

用真空双蒸发源交替蒸发法和单蒸发源混合瞬时蒸发法制备了Ag-MgF2金属陶瓷薄膜。透射电镜、电子衍射、X射线衍射以及X射线光电子能谱分析结果表明，薄膜由晶态超微粒Ag镶嵌于主要为非晶态的MgF2中构成。Ag-MgF2形成的金属陶瓷复合晶体结构所对应的主要谱峰为d=0．26102，0．23540，0．20393nm。用真空单蒸发源混合瞬时蒸发法制备的Ag-MgF2薄膜表面元素的结合能大于双蒸发源交替蒸发法制备的薄膜表面元素的结合能。