Waveguide external cavity narrow linewidth semiconductor lasers

Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.     

硼中子俘获治疗加速器ECR质子源电磁场仿真设计

电子回旋共振(ECR)质子源具有可给流强高、亮度高、可靠性高、使用频率高、易维护、小型化等优点，因而被硼中子俘获治疗(BNCT)装置的直线加速器所采用。本文利用CST软件对2.45 GHz ECR质子源进行优化设计。优化后ECR质子源的等离子体发生器腔体的尺寸为101.12 mm×45.00 mm，给出了脊波导耦合器的最优尺寸参数，使等离子体发生器腔体内电场强度提高为普通波导的4.5倍。通过Opera-3D对ECR质子源的引出电极结构进行了仿真计算，并给出了优化参数。另外，初步设计了质子源的线圈磁铁系统，优化了磁场分布。本文结果为质子源的研制提供了数据。     

Flower‐shaped ultra‐wideband fractal antenna

A flower‐shaped ultra‐wideband fractal antenna is presented. It comprises a fourth iterative flower‐shaped radiator, asymmetrical stub‐loaded feeding line, and coplanar quarter elliptical ground planes. A wide operating band of 12.12 GHz (4.58‐16.7 GHz) for S ₁₁ ≤ ? 10 dB is achieved along with an overall antenna footprint of 15.7 × 11.4 mm². In addition, other desirable characteristics, that is, omnidirectional radiation patterns, peak gain upto 5 dB, and fidelity factor more than 75% are achieved. A good agreement exists between the simulation and measured results. The obtained results illustrate that this antenna has wide operating range and compact dimensions than available structures.     

基于端面耦合的InP基激光器/硅光波导混合集成技术研究

针对硅光子集成回路缺少实用化光源的问题,提出了一种1.55μm波段InP基FP激光器芯片、InP基PIN光电探测器芯片与硅光波导芯片集成模块的设计与制备方法。使用CMOS工艺兼容的硅光无源器件制备工艺,设计并制备了倒拉锥型端面耦合器,与锥形透镜光纤耦合效率为36.7%。采用微组装对准技术将激光器芯片与硅波导芯片耦合、UV固化胶固化后耦合效率为35.8%,1 dB耦合对准容差横向为1.2μm,纵向为0.95μm。     

基于拓扑单向波导的电磁诱导透明效应研究

为了研究电磁诱导透明效应在拓扑单向波导中的表现，设计了一种基于磁性光子晶体的耦合谐振腔波导。通过对谐振腔位置的调控实现了具有单向性质的电磁诱导透明效应，并利用有限时域差分仿真证明了电磁诱导透明效应在单向拓扑波导中的相关特性。该研究可为拓扑波导中实现光延迟、光开关等提供参考。     

Effects of deep etching methods on the microstructure of the etched vias of the silicon-based SIWF

The microstructure and the array accuracy of the etched vias of the silicon-basedsubstrate integrated waveguide filter (SIWF) are crucial to the electromagnetic performance and the reliability of the silicon-based SIWF. In this paper, three different etching methods, including potassiumhydroxide etching, picosecond UV laser etching, and inductively coupled plasma (ICP) etching are utilized to etch via arrays onhigh resistivity ［100］-siliconsubstrates. The profiles and the array accuracy of the vias are measured by optical critical dimension and the micromorphology of the vias is characterized byscanning electron microscopy (SEM), on the basis of which the effects of different deep etching methods on the microstructure of the viasidewall of the silicon-based SIWF are studied. The results indicate that the microstructure of the vias etched by the inductively coupled plasma etching method is the best. Meanwhile, this kind of vias has the highest array accuracy and the lowest roughness. So, under the current condition of process equipment and technical level, ICP etching is the optimal method for manufacturing deep via arrays of the silicon-based SIWF.     

多层圆片级堆叠THz硅微波导结构的制作

基于微电子机械系统(MEMS)工艺,提出一种多层圆片堆叠的THz硅微波导结构及其制作方法。为了验证该结构在制作THz无源器件中的优势,基于6层圆片堆叠的硅微波导结构,设计了一种中心频率365 GHz、带宽80 GHz的功率分配/合成结构,并对其进行了仿真。研究了制作该结构的工艺流程,攻克了工艺过程中的关键技术,包括硅深槽刻蚀技术和多层热压键合技术,并给出了工艺结果。最终实现了多层圆片堆叠功率分配/合成结构的工艺制作和测试。测试结果表明,尽管样品的插入损耗较仿真值增加3 dB左右,考虑到加工误差和夹具损耗等情况,样品主要技术指标与设计值较为一致。     

基于电磁超材料的微波单向传输圆波导设计

微波隔离器是微波系统中不可或缺的器件,常见的隔离器都采用了铁氧体旋磁材料配合吸收负载实现电磁波的单向传输。这种器件虽然可以使电磁波单向传输,但是并不能改善能量的浪费问题,还增加了系统的复杂度。针对上述问题,本文基于电磁超材料设计了一种微波单向传输的圆波导,使用波导内壁涂覆折射率逐渐变化的材料来影响电磁波的传输特性,从而实现电磁波单向传输。本文给出了微波单向传输的电磁计算模型和超材料结构及属性,并通过简化这种超材料使其易于实现;最后通过电磁仿真分析了这种材料的电磁特性并给出了这种材料的实现方法。     

用于FBG解调的AWG芯片的设计、仿真与制备

设计、仿真并制备了一种用于光纤布拉格光栅(FBG)解调的阵列波导光栅(AWG)芯片。该芯片基于SOI衬底进行制备,并在AWG的输入/输出波导、阵列波导与平板波导之间采用双刻蚀结构进行优化。经仿真,该AWG的插入损耗为1.5dB,串扰小于 -20dB,3dB带宽为1.5nm。优化后的AWG芯片采用深紫外光刻技术、电感耦合等离子体等技术制备。经测试,该AWG的插入损耗为3dB,串扰小于 -20dB,3dB带宽为2.3nm。搭建了基于该AWG的解调系统,解调实验结果表明,该系统在0.8nm范围内的解调精度可达11.26pm,波长分辨率为6pm。     

Ka波段波导-带状线转换结构

提出了一种Ka波段波导 带状线转换结构,通过在多层介质板上地层的椭圆形开孔与两个椭圆形金属贴片结构完成带状线与波导之间的电磁耦合与匹配设计,实现了Ka波段信号在波导与带状线之间的相互转换。同时将背靠背波导 带状线转换结构在三维电磁场仿真软件中进行了建模和优化仿真。经过加工与测试,结果表明,在32.3~38.3 GHz的频带内输入与输出回波损耗小于-10 dB,插入损耗小于1.2 dB。该Ka波段波导 带状线转换结构具备良好的性能,且具有结构简单、加工方便等优点,在毫米波电路设计方面具有较高的应用价值。