氢化物发生原子荧光法同时测定中草药中的锗和硒

利用氢化物发生技术结合原子荧光方法,对5种常见的中草药中的锗和硒进行测定,并对各种实验参数进行了考察,确定了同时测定锗和硒的最佳条件。锗和硒的检出限分别为0.4,0.2μg/L,相对标准偏差分别为2.0%和1.5%。     

纳米碳化硅抛光液的制备及其对蓝宝石晶片抛光性能的研究

制备了一种纳米SiC抛光液,用透射电镜观察其粒子形貌,通过纳米粒度仪研究了分散剂种类对悬浮液中SiC的粒径分布和Zeta电位的影响,并用制备的抛光液对蓝宝石晶片进行化学机械抛光。使用原子力显微镜观察蓝宝石晶片抛光后的表面形貌。结果表明:SiC磨料在以十六烷基三甲基溴化铵(CTAB)作为分散剂的悬浮液中分散效果最好;在相同试验条件下,采用质量分数1%的SiC抛光材料的去除速率最大,为24.0 nm/min,获得蓝宝石晶片表面质量较好,表面粗糙度R a为2.2 nm。     

鲁米诺-EDTA体系测定水样中超痕量镉

依据碱性介质中痕量Cd2+可以显著增加鲁米诺-EDTA体系的发光强度且强度增加与Cd2+质量浓度成正比的特点,建立流动注射-化学发光测定Cd2+的方法,并对检测条件进行优化,研究干扰离子对测定结果的影响。结果表明,在优化条件下,Cd2+质量浓度在1~30 ng/L范围内与发光强度呈现线性关系,检出限为0.23 ng/L,相对标准偏差为3.5%;用于模拟水样中Cd2+的检测,回收率92.0%~106.0%。     

Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices

利用自制的抛光液对高纯镍片进行化学机械抛光,研究化学机械抛光过程中抛光压力、pH值、H2O2浓度、络合剂种类及其浓度、SiO2浓度等参数对抛光速率的影响。结果表明在抛光压力为13.79kPa、H2O2浓度为0.5%,pH值为3.0,SiO2浓度为0.5%,络合剂EDTA及其浓度为1%时,得到最大抛光速率为312.3nm/min;在抛光压力为13.79kPa、pH值为4.0、SiO2浓度为1%、络合剂EDTA为1%、H2O2浓度为1%条件下抛光得到的镍片表面质量较好,表面粗糙度Ra达到5nm。并利用电化学手段研究了镍片在抛光液中的溶解与钝化行为。     

Acetic acid gas sensors based on Ni2+ doped ZnO nanorods prepared by using the solvothermal method

Ni²⁺-doped ZnO nanorods with different doping concentrations are prepared via the solvothermal method. The doped ZnO nanorods are characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The amount of Ni²⁺ ions that enter the lattice of ZnO increases with increasing the Ni²⁺/Zn²⁺ molar ratio when the molar ratio of Ni²⁺/Zn²⁺ in the starting solution is lower than 3% and does not change obviously if the mole ratio of Ni²⁺/Zn²⁺ in the starting solution is in the range of 3-10 mol%. The effect of Ni²⁺ doping on the gas-sensing properties is investigated. The results reveal that the amount of Ni²⁺ has a great influence on the response (R_a/R_g) and the gas-sensing selectivity. The sensor based on 1 mol % Ni²⁺ doped ZnO nanorods (120 ℃, 10 h) exhibits a high response to acetic acid vapor, in particular, the responses to 0.001 ppm and 0.01 ppm acetic acid vapor reach 1.6 and 2, respectively. The response time and the recovery time for 0.001 ppm acetic acid are only 4 s and 27 s, respectively.     

锇在甲酸体系抛光液中化学机械抛光研究

基于金属锇有可能成为大规模集成电路铜互连扩散阻挡层新材料,利用自制的甲酸(HCOOH)体系抛光液对金属锇进行了化学机械抛光研究,利用原子力显微镜(AFM)观察抛光后锇的表面形貌。采用电化学分析方法研究双氧水(H2O2)、HCOOH和苯丙三氮唑(BTA)对样品腐蚀效果的影响。结果表明:当抛光液中仅含H2O2时,金属锇表面腐蚀不明显;而在H2O2-HCOOH体系中,H2O2浓度的增加可使金属锇表面的腐蚀速度明显加快,但不利于金属锇表面钝化膜的形成;缓蚀剂BTA的加入促进了金属锇表面钝化膜的生成,降低了抛光速率,但同时提高了金属锇的表面质量,表面粗糙度Ra由8.0 nm降低到4.2 nm。     

氢化物发生原子荧光法测定海产品中的镉

利用氢化物发生技术结合原子荧光方法,对5种常见的海产品中的镉进行测定,实验中优化了仪器的工作条件,考察了酸介质浓度,还原剂浓度,增敏剂浓度等对测定镉信号强度的影响,确定了测定镉的最佳条件.本法线性范围为0.1～10μg/L,检出限为0.014μg/L,相对标准偏差为1.5%,加标回收率为92.0%～102.5%.     

纳米氧化铈抛光液对钌的化学机械抛光

采用液相沉淀法制备了纳米CeO2磨料,利用X射线衍射(XRD)表征其物相组成.通过纳米粒度仪研究了分散剂种类、热处理温度对CeO2磨料制备的悬浮液的粒径分布和Zeta电势的影响.用由CeO2磨料制备的抛光液对钌进行化学机械抛光,采用原子力显微镜观察钌片表面的微观形貌.结果表明:制备的粉体是具有立方萤石型结构的纳米CeO2,其晶粒尺寸随热处理温度的升高而增大;CeO2磨料在以六偏磷酸钠(SHMP)作为分散剂的悬浮液中分散效果最好;在抛光压力为6.9 kPa,抛光台转速为50 r/min,抛光液流量为50 mL/min,抛光液pH值为10.0,抛光液主要组成(质量分数)为1％ CeO2,1％(NH4)2S2O8,0.01％ SHMP的条件下,钌的抛光速率达到9.0 nm/min,表面粗糙度Ra值为2.2 nm.     

Acetic acid gas sensors based on Ni~(2+) doped ZnO nanorods prepared by using the solvothermal method

正Ni~(2+)-doped ZnO nanorods with different doping concentrations are prepared via the solvothermal method.The doped ZnO nanorods are characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM),respectively.The amount of Ni~(2+) ions that enter the lattice of ZnO increases with increasing the Ni~(2+)/Zn~(2+) molar ratio when the molar ratio of Ni~(2+)/Zn~(2+) in the starting solution is lower than 3%and does not change obviously if the mole ratio of Ni~(2+)/Zn~(2+) in the starting solution is in the range of 3-10 mol%.The effect of Ni~(2+) doping on the gas-sensing properties is investigated.The results reveal that the amount of Ni~(2+) has a great influence on the response(R_a/R_g) and the gas-sensing selectivity.The sensor based on 1 mol%Ni~(2+) doped ZnO nanorods (120℃,10 h) exhibits a high response to acetic acid vapor,in particular,the responses to 0.001 ppm and 0.01 ppm acetic acid vapor reach 1.6 and 2,respectively.The response time and the recovery time for 0.001 ppm acetic acid are only 4 s and 27 s,respectively.     

流动注射化学发光法测定啶氧菌酯

基于啶氧菌酯对鲁米诺-高锰酸钾化学发光体系的增敏作用,建立流动注射化学发光分析法测定啶氧菌酯的方法,确定测定的最佳条件.测定啶氧菌酯的线性范围为1 ～ 100 mg/L,检出限(3σ)为5 ng/mL,相对标准偏差(n=11)为1.8％.用于水样中啶氧菌酯的测定,结果满意.