GaN基材料和器件的质子辐照效应北大核心CSCD

由于综合性能优势,GaN基功率器件更适合于卫星电子系统等空间设备中射频功率放大模块的发展需求。因此,GaN基器件及材料的辐照效应研究显得尤为重要。通过对GaN基材料和器件进行质子辐照研究,可以发现,低注量辐照增加了GaN材料的载流子浓度和迁移率,降低了材料的串联电阻。此外,辐照增加了GaN的张应力,引起了材料表面形貌恶化,而对位错密度影响甚小。对于GaN基高电子迁移率晶体管(HEMT)器件,辐照发生在较高注量下,器件参数才发生较为明显的退化,而且阈值电压变化最为显著,分析认为,高注量辐照时,辐照感生受主缺陷造成的二维电子气(2DEG)浓度降低是上述器件退化的主要原因。     

焙烧还原条件下硬脂酸钠改性水滑石的制备及应用

以镁铝碳酸根型水滑石MgAl-CO₃ -LDHs(LDHs)为前驱体,硬脂酸钠(NaSt)为改性剂,通过焙烧还原法在硬脂酸钠的溶液中制备硬脂酸钠改性水滑石LDHs-NaSt,采用X射线衍射仪(XRD)、傅里叶转变红外光谱仪(FTIR)和扫描电镜(SEM)对结构进行表征,并研究不同改性剂加入量条件下得到的改性水滑石对聚氯乙烯(PVC)热稳定性能的影响。结果表明,在氮气保护下,焙烧后的水滑石可以成功复原,硬脂酸钠对LDHs的改性为表面改性,但影响复原水滑石的结晶度。改性水滑石可以改善PVC的初期着色性和长期热稳定性,随着改性剂浓度的增大,当NaSt与LDHs质量比为1∶4时,静态热老化时间可以达到370 min,比未改性水滑石热稳定性能提升了61%。     

Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures

The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia （IASA） method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.     

间歇供氨高温AlN缓冲层对AlGaN/GaN异质结的影响

研究了以间歇供氨的方法直接高温生长的氮化铝为缓冲层的AlGaN/GaN材料,高温氮化铝的应用可以有效的提高晶体质量和表面形貌,并且二维电子气的浓度和迁移率也得到改善。     

N面GaN材料及器件的研究进展

N面GaN材料及器件是宽禁带半导体技术中的重要研究内容.对N面GaN材料及器件的概念、优势、研究现状以及存在的问题进行了系统的分析.在此基础上,论述了N面GaN材料及器件未来的发展趋势.     

Breakdown voltage and current collapse of F-plasma treated AIGaN/GaN HEMTs

The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.     

带有原位生长SiNx绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件(英文)

本文采用金属有机化学气相沉积(MOCVD)生长原位SiNx栅介质制备了用于Ka波段高功率毫米波应用的AlN/GaN金属绝缘体半导体高电子迁移率晶体管(MIS-HEMTs)。原位生长SiN_x栅介质显著抑制了栅反向漏电、栅介质/AlN界面态密度和电流坍塌。所研制的MIS HEMTs在V_GS=2 V时最大饱和输出电流为2.2 A/mm,峰值跨导为509 m S/mm,在V_GS=-30 V时肖特基栅漏电流为4.7×10^-6 A/mm。采用0.15μm T形栅技术,获得98 GHz的f_T和165 GHz的f_MAX。大信号测量表明,在连续波模式下,漏极电压V_DS=8 V时,MIS HEMT在40 GHz下输出功率密度2.3 W/mm,45.2%的功率附加效率(PAE),而当V_DS增加到15 V时,功率密度提升到5.2 W/mm,PAE为42.2%。     

改性兰炭末对对硝基苯酚的吸附平衡和动力学

采用硝酸改性-高温活化法对废弃的兰炭末进行处理,对改性前后的兰炭末进行了SEM和BET表征,测定了改性后的兰炭末对对硝基苯酚的吸附性能,通过静态吸附实验研究了改性兰炭末对对硝基苯酚的吸附平衡和动力学特征。结果表明,兰炭末经改性后表面粗糙度明显增加,孔道明显增多,总孔容和比表面积分别增加了7.1倍和4.3倍; Langmuir方程可较好地描述对硝基苯酚在改性兰炭末上的吸附平衡,特征分离系数R_L为0~1,为优惠吸附,温度升高有利于吸附的进行;动力学研究表明,对硝基苯酚在改性兰炭末上的吸附过程符合HO准二级动力学模型,颗粒外的液膜扩散是决定吸附速率的控制步骤,吸附过程的表观活化能E_a为9.825kJ/mol。改性兰炭末对对硝基苯酚有较好的吸附能力,328K下平衡吸附量达158.5mg/g,可作为一种廉价、高效的酚类废水处理用吸附剂,有很好的工业化应用前景。     

立式MOCVD反应室感应加热温度场的有限元分析*

The temperature field in the vertical metalorganic chemical vapor deposition （MOCVD） reactor chamber used for the growth of GaN materials is studied using the finite element analysis method （FEM）. The effects of the relative position between the coils and the middle section of the susceptor, the radius of the coil, and the height of the susceptor on heating condition are analyzed. All simulation results indicate that the highest heating efficiency can be obtained under the conditions that the coil distributes symmetrically in the middle section of the susceptor and the ratio of the height of the susceptor to that of the coil is three-quarters. Furthermore, the heating efficiency is inversely proportional to the radius of the coil.