新型地锚张弦梁式泥石流格栅坝构件受力的简化计算方法

针对常见泥石流防治结构被冲击破坏的问题，基于“柔性消能”理念，结合张弦梁结构和竖向预应力锚杆技术，提出一种既能改善结构受力性能、增加结构整体抗冲击能力、保证结构安全可靠，又能减小结构构件截面尺寸、节约成本、便于现场施工组装和后期运营维护的新型地锚张弦梁式泥石流格栅坝，并阐述其技术原理。根据泥石流荷载分布和新型地锚张弦梁式泥石流格栅坝的受力特征，给出其简化的内力计算方法；并利用SAP2000建立新结构有限元模型，分析了结构的整体受力，验证了构件简化计算方法的合理性；结合Python语言和Qt De? signer软件开发了相应的设计计算软件，对新型地锚张弦梁式泥石流格栅坝的内力进行求解。结果表明：提出的新结构抗冲击性能好，构件受力均匀；以后设计中应关注竖杆的剪切脆性破坏和立柱偏心受力情况，保证结构安全；变形协调仅使底层张弦梁与竖杆内力偏大，实际工程应用时，应着重验算底层构件，防止其破坏；文中提出的简化计算方法能较准确的反映结构的受力特性，具有一定的合理性，研究可为新型地锚张弦梁式泥石流格栅坝的设计计算和推广应用提供理论依据和技术支持。     

基于设备改造的选煤厂介质消耗控制研究

同忻选煤厂采用重介质选煤技术,磁性介质的消耗较大,为此,相关技术人员针对介质回收系统设备进行了改造设计。改造后,设备运行稳定,介质消耗降低,提高了原煤的分选效率,创造了较好的安全经济效益。     

Reducing numerical dissipation in smoke simulation

Numerical dissipation acts as artificial viscosity to make smoke viscous. Reducing numerical dissipation is able to recover visual details smeared out by the numerical dissipation. Great efforts have been devoted to suppress the numerical dissipation in smoke simulation in the past few years. In this paper we investigate methods of combating the numerical dissipation. We describe visual consequences of the numerical dissipation and explore sources that introduce the numerical dissipation into course of smoke simulation. Methods are investigated from various aspects including grid variation, high-order advection, sub-grid compensation, invariant conservation, and particle-based improvement, followed by discussion and comparison in terms of visual quality, computational overhead, ease of implementation, adaptivity, and scalability, which leads to their different applicability to various application scenarios.     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

一种CMOS静态双沿顺序脉冲发生器的设计

提出一种基于CMOS技术的静态双沿顺序脉冲发生器结构。他是由以基于CMOS二选一选择器的电平型触发器构成的记忆单元和一个与门阵列组成的转译单元构成的。与门阵列的转译单元使顺序脉冲发生器在时钟上升沿和下降沿处均能输出移位脉冲,从而形成双沿触发的功能。仿真验证其功能正确,且根据分析该结构不仅能够节省芯片面积,还可以大大减小芯片的功耗。     

环氧树脂及其增强材料回顾

本文回顾了PCB制造常用的环氧树脂及其增强材料的性能和用途。同时,还介绍了代用树脂材料和代用增强材料的最新进展,如改性环氧树脂、无卤树脂、Thermount、PTFE、氰酸酯等,并就其性能进行了探讨。     

兼使水流转向的非对称窄缝挑坎

讨论了兼有水流转向功能的一级非对称直线边壁窄缝的设计方法与水力特性，两边墙转向角之差即为水流转向角，两边墙转角相等时出口水流的水深和佛汝德数也分别相等。按在窄缝出口前形成完整幅射流的条件，讨论了兼有转向功能的非对称曲线边墙窄缝的设计方法与水力特性。比较了六种体型(三种对称、三种非对称)窄缝在八种工况对泄槽底板的冲击压强，实测结果表明，非对称性越强冲击压强越小。     

Aspects of rapid crack propagation in silicon

Fracture experiments with silicon specimens in recent years have shown the need for a new approach to the analysis of rapidly propagating cracks in single crystals. Behaviour and phenomena have been revealed that fracture in these materials is rather different from the fracture of both amorphous and polycrystalline materials. We show that continuum mechanics is insufficient for analyzing crack propagation in single crystals since it is unable to consider atomistic‐scale phenomena. Accordingly, we describe basic phenomena associated with rapid crack propagation in silicon : (i) anisotropic velocity‐dependent R‐curve behaviour, as a key phenomenon dictating atomistic scale behaviour, (ii) crack deflection from one cleavage plane to another as a mesoscopic scale phenomenon in single‐crystal fracture, (iii) the Rayleigh surface wave speed as the limiting crack tip velocity is re‐examined, (vi) the lowest crack velocity in brittle crystals is examined, and finally (v) the interaction between crack path and preferred cleavage planes in single crystals is depicted.     

用红外热象技术研究有凸台热源倾斜板的散热

本文介绍红外热象技术在工程热物理研究中某些应用的探索。作为实例，通过热象技术，实验研究了具有水平凸台离散热源的倾斜板的散热，在研究它的自然对流换热部份结合利用激光全息干涉技术。此间着重于分析倾斜角对散热的影响。     

Power Dissipation in Spintronic Devices Out of Thermodynamic Equilibrium

Quantum limits of power dissipation in spintronic computing are estimated. A computing element composed of a single electron in a quantum dot is considered. Dynamics of its spin due to external magnetic field and interaction with adjacent dots are described via the Bloch equations. Spin relaxation due to magnetic noise from various sources is described as coupling to a reservoir. Resulting dissipation of energy is calculated and is shown to be much less than the thermal limit, ∼kT per bit, if the rate of spin relaxation is much slower than the switching rate. Clues on how to engineer an energy efficient spintronic device are provided.