ECCP干法刻蚀条件下的TFT基板绝缘层过孔腐蚀的改善

过孔搭接失效一直是TFT-LCD行业中重点改善的不良之一。为了解决该不良,本文分析了不同刻蚀模式(ICP和ECCP)对过孔形貌的影响,利用四因子法研究ECCP模式刻蚀参数(压力、偏置/源极射频功率及O_2/SF_6气体比例)对刻蚀速率和均一性的影响,并得出ECCP过孔改善的最佳刻蚀参数。结果表明:ECCP模式下,氮化硅刻蚀过程中物理轰击对GI截面的下沿与Cu接触区域形成损伤后产生的缺陷,是诱发过孔腐蚀的主要因素,ICP模式无腐蚀。反应腔压力增大刻蚀速率增大,均一性下降;偏置射频功率增大,速率增大,均一性提高;源极射频功率增大,速率变化小,均一性下降;O_2/SF_6气体比例对速率影响小,O_2含量越高,均一性越高。为达到PR胶保护GI下沿截面的目的,反应压力增大到1.7Pa,偏置射频功率减小到30kW,源极功率增加到30kW,O_2/SF_6气体保持比例1∶1后,增加了氮化硅的刻蚀量,减小PR胶的内缩量,避免物理溅射表面损伤;同时刻蚀速率达到750nm/s,均一性达到10%,腐蚀发生率为10%～0,使ECCP刻蚀模式对过孔的腐蚀影响得到有效解决。     

GaN功率MMIC背面通孔工艺优化及可靠性分析

介绍了改进GaN功率MMIC背面通孔工艺的相关方法,并对通孔进行了可靠性方面的测试与分析。通过优化机械研磨的方法,减薄圆片至75μm左右,保持片内不均匀性在4%以内;利用ICP对基于SiC衬底的GaN功率MMIC进行了背面通孔工艺的优化,减少了孔底的柱状生成物。随后的可靠性测试测得圆片通孔的平均电阻值为6.3 mΩ,平均电感值为17.2 nH;对通孔样品在0.4 A工作电流175°C节温下进行了工作寿命试验,200 h后通孔特性无明显退化。     

封装基板过孔电特性建模方法

基于电路二端口网络理论,建立了过孔电学特性等效电路模型,给出了模型参数的提取过程。在分析比较物理模型和经验模型两种不同的模型参数提取方法及其优缺点的基础上,给出了过孔高频特性的经验模型及其模型参数。为验证经验模型的有效性,提出了基于仿真的快速验证方法。实验结果表明,该方法避免了实物测试验证所带来的测试误差,同时为降低建模成本提供了新思路。     

具有铜充填导通孔的高密度玻璃基板

概述了具有铜充填导通孔的玻纤布线基板的构造、制作方法、应有发展和应用实例。     

Femtosecond Laser Drilling of Alumina Wafers

The topography, radial spread, and chemical composition of the slag produced during percussion and trepanning hole drilling techniques using femtosecond laser were investigated. Results of analyses by optical microscopy, scanning electron microscopy, and energy dispersion spectroscopy are presented. While there were no significant differences in the average ablation rates observed when a near infrared femtosecond laser was used, when compared with the ultraviolet nanosecond laser ablation of alumina (Al₂O₃) ceramics, that of the femtosecond laser provided much cleaner holes. There was an absence of particulates due to re-solidification of molten material around the periphery of the hole. The slag consisted of ultrafine powders formed during condensation of the supersaturated ablation plume. This slag can easily be removed in an ultrasonic bath with a mixture of acetone and water. In combination with trepanning hole drilling, the femtosecond laser produced micro-via holes, in alumina wafers, that were free of cracks and re-cast molten material.     

LED电极结构优化设计与仿真计算

LED电极结构极大地影响着LED芯片的电流扩展能力,优化电极结构,能够缓解电流拥挤现象.讨论了正装LED结构和倒装LED结构的电流分布模型,并通过SimuLED软件研究了电极结构对LED电流扩展能力的影响.仿真结果表明:采用插指型电板结构极大提高了正装LED的电流扩展能力,电极下方插入电流阻挡层(CBL)后改变了芯片的电流分布状况,有利于光效的提升;而倒装LED的通孔式双层金属电极结构利用两层金属的互联作用,使n电极能够在整个芯片范围内均匀分布,进一步提高了电流扩展性能.     

GaAs backside via-hole etching using ICP system

A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained and the etched profiles were optimized.     

K波段单片硅MEMS谐振器

介绍了基片集成波导技术和ICP深刻蚀微机械通孔阵列的硅基MEMS谐振器,通孔阵列和地平面形成不辐射介质波导,采用CPW电流探针与谐振腔进行信号耦合,在单层硅片上实现了平面电路与三维硅填充谐振腔的信号传输,得到低成本高性能可与平面电路集成的MEMS谐振器.谐振器工作于主模TE101模式,在片测试的Q值大于180,谐振频率21 GHz,与仿真结果吻合,芯片尺寸为4.7 mm×4.6 mm×0.5 mm.     

Etching of silicon carbide for device fabrication and through via-hole formation

We have investigated the etching of SiC using inductively-coupled-plasma reactive ion etching with SF₆-based and Cl₂-based gas mixtures. Etch rates have been investigated as functions of bias voltage, ICP coil power, and chamber pressure. It will be shown, for the first time, that SiC surfaces etched in Cl₂-based plasmas yield better surface electrical characteristics than those etched in SF₆-based plasmas. We have also achieved SiC etch rates in excess of 1 μm/min which are suitable for micro-machining and via-hole applications. Through via-holes obtained in 140 μm thick SiC at an effective etch rate of 824 nm/min have been achieved. To the best of our knowledge, to date, this is the highest effective etch rate for a through via-hole etched with a masking process compatible with microelectronic fabrication.