Y4.67Si3O13-based phosphors: Structure,morphology and upconversion luminescence for optical thermometry

How to improve the sensitivity of the temperature-sensing luminescent materials is one of the most important objects currently. In this work, to obtain high sensitivity and learn the corresponding mechanism, the rare earth (RE) ions doped Y_4.67Si₃O₁₃ (YS) phosphors were developed by solid-state reaction. The phase purity, structure, morphology and luminescence characteristics were evaluated by XRD, TEM, emission spectra, etc. The change of the optical bandgaps between the host and RE-doped phosphors was found, agreeing with the calculation results based on density-functional theory. The temperature-dependence of the upconversion (UC) luminescence revealed that a linear relationship exists between the fluorescence intensity ratio of Ho³⁺ and temperature. The theoretical resolution was evaluated. High absolute (0.083 K⁻¹) and relative (3.53% K⁻¹ at 293 K) sensitivities have been gained in the YS:1%Ho³⁺, 10%Yb³⁺. The effect of the Yb³⁺ doping concentration and pump power on the sensitivities was discussed. The pump-power–dependence of the UC luminescence indicated the main mechanism for high sensitivities in the YS:1%Ho³⁺, 10%Yb³⁺. Moreover, the decay-lifetime based temperature sensing was also evaluated. The above results imply that the present phosphors could be promising candidates for temperature sensors, and the proposed strategies are instructive in exploring other new temperature sensing luminescent materials.     

HFCVD法制备SiC材料及室温光致发光

利用热丝化学气相沉积法(HFCVD)以CH4和SiH4作为反应气体在Si衬底上制备了SiC薄膜。用X射线衍射(XRD)、傅立叶红外吸收谱(FTIR)等手段对样品进行了结构和组分分析，分析结果表明已经在Si衬底上制备了SiC薄膜。对所制备的SiC薄膜进行了光致发光测试，在室温下观察到了薄膜峰值位于417nm和436nm的较强的可见光发射，认为这两个相近的蓝光发射起源可能是光激发载流子从SiC晶粒核心激发．然后转移到SiC晶粒表面发光中心上的辐射复合。     

叠加能量C^＋注入SiO2薄膜的光致发光特性

首次采用叠加能量离子注入技术制备Ｃ＾＋注入ＳｉＯ２薄膜样品，室温下观测到很强的蓝光发射。通过测量样品的光致发光谱对退火条件的依赖关系，研究了样品的发光特性。对发光机制进行了初步探讨。     

静压下ZnS：Te中Te等电子陷阱的发光

研究了4块ZnS：Te薄膜样品(Te组分从0．5％到3．1％)的光致发光谱在常压下的温度特性．对于Te组分较小的2块样品观察到2个发光峰，分别来自Te1和Te2等电子陷阱；而对Te组分较大的2块样品则只观察到1个来自Te2等电子陷阱的发光．我们还研究了这些发光峰在低温1．5K下的流体静压压力行为．观察到与Te1有关的发光峰压力系数比ZnS带边的要大很多，而与Te2有关的发光峰压力系数则比带边小．根据Koster-Slater模型，价带态密度半宽随压力的增加是Te1中心有较大压力系数的主要原因，而Te1和Te2中心的不同压力行为则是由于压力对两者缺陷势增强的不同效果引起的．     

利用固相反应法在硅片上制备硅酸锌发光薄膜及表征

采用与硅集成工艺相兼容的固相反应方法在硅衬底上制备了未经掺杂及掺锰的硅酸锌薄膜 .XRD测试和UV - Vis吸收谱测试证明在高于 880℃的温度下热处理 ,可以获得结晶状态很好的硅酸锌薄膜 .光致发光光谱分析表明 ,未掺杂的薄膜在紫外波段有较弱的发射 ,而掺锰的硅酸锌薄膜在可见光波段有很强的光致发射 .由于硅酸锌薄膜在高温下非常稳定 ,可以与硅集成电路工艺兼容 ,而且发光强度高 ,因此在制作硅基光电集成器件方面有非常大的应用前景     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

等离子体氧化nc-Si/SiO_2多层膜的蓝光发射

报道了在等离子体增强化学气相沉积 (PECVD)系统中用交替淀积 a-Si对其进行原位等离子体氧化的方法制备了 a-Si∶H/ Si O2 多层膜。随着 a-Si∶H子层的厚度从 3 .8nm减小到 1 .5 nm,a-Si∶H/ Si O2 多层膜的光吸收边和光致发光 (PL )出现了蓝移。在晶化的 a-Si∶ H/ Si O2 多层膜中不仅观察到室温下的红光带 (80 0nm)的发光峰 ,而且还观察到蓝光发射 (4 2 5 nm) ,结合 Raman,TEM和 PL测试 ,对其原因作了简单的分析     

Origin of visible photoluminescence from porous silicon as studied by Raman spectroscopy

In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and silicon complexes (such as SiH _x and siloxene) and defects at Si/SiO₂ interfaces as luminescent centres.     

GaAs／AlGaAs非对称耦合双阱光荧光的温度依赖关系

报道了ＧａＡｓ／ＡｌＧａＡｓ非对称耦合双量子阱ｐｉｎ结构在不同温度下的光荧光谱，观察到宽阱与窄阱重空穴激子峰荧光强度随温度上升而较快下降的不同变化关系，结果表明窄阱电子的热发射是导致窄阱光荧光强度随温度上升而较快下降的主要原因。同时观测到宽阱轻空穴激子峰强度特环的温度依赖关系，并分析了其物理机制。     

As压对LT-GaAs/AlGaAs多量子阱光学特性的影响

在衬底温度为 3 5 0°C的条件下 ,用分子束外延的方法 ,在不同的砷压条件下生长了 Ga As/Al0 .3Ga0 .7As多量子阱结构。 77K的荧光实验证明 ,砷压对样品的光学特性影响显著。认为砷压对低温多量子阱光学特性的影响是点缺陷随砷压的演化和能级间相互补偿的共同结果。通过优化砷压 ,样品的荧光峰的半峰宽减小到 3 me V,这是到目前为止所报道过的最窄的低温多量子阱的荧光峰。相应的垂直场光折变器件的电吸收为 60 0 0 cm