CdTe光敏薄膜的制备及性能研究

本文采用高温烧结和真空蒸发制备了ＣｄＴｅ光敏薄膜，探讨了制备工艺对ＣｄＴｅ薄膜性能和结构的影响，得到在基片温度为１３０℃左右制备的ＣｄＴｅ薄膜具有明显的光敏特性，并得到ＣｄＴｅ材料的禁带宽度为１．６３ｅＶ。利用Ｘ衍射对不同基片温度下制备的ＣｄＴｅ薄膜材料进行了结构分析，发现基片温度为１３０℃左右制备的ＣｄＴｅ薄膜具有明显的衍射峰。     

CdTe单晶的红外消光特性

本文模拟计算了ＣｄＴｅ中Ｔｅ沉淀相对红外光的散射吸收作用及其对入射光能量和Ｔｅ沉淀相尺寸的依赖关系,根据光透射比分别处理了ＣｄＴｅ的吸收和Ｔｅ沉淀相的散射吸收消光作用．结合光致发光和电学特性的研究,讨论了Ｃｄ气氛中的退火对ＣｄＴｅ晶体的红外消光特性的影响．     

红外光学薄膜材料折射率温度特性的研究方法

红外光学系统中靠近探测器的光学元件通常处于低温环境中,低温环境会使得光学元件表面薄膜的透射光谱发生漂移,进而严重影响红外光学系统的成像质量。研究发现光谱漂移是由于系统中红外光学薄膜的折射率发生了改变。论文针对红外光学薄膜材料折射率温度特性开展了研究,在光学薄膜理论基础上,通过分析几种波长色散模型的特点,提出了一种红外光学薄膜材料折射率温度特性的研究方法。该方法基于不同温度测得的透射率光谱,通过光谱反演得到不同温度条件下光学薄膜材料的折射率,并在Cauchy色散模型的基础上,通过数据拟合分析,能够得到红外光学薄膜材料的折射率温度/波长色散公式。采用该方法对PbTe、Ge两种典型红外光学薄膜材料折射率温度特性进行了分析研究,验证了该方法的可行性。     

MOCVD－Hg_（1－x）Cd_xTe／CdTe／GaAs外延材料红外吸收光谱研究

从理论上完成对ＭＯＣＶＤ工艺生长的ＨｇＣｄＴｅ／ＣｄＴｅ／ＧａＡｓ材料的透过率、吸收边和相干行为的计算．结果表明光的干涉条纹与外延层ＨｇＣｄＴｅ和缓冲层ＣｄＴｅ的总厚度相关，其透过率不能直接反映材料的内在质量．计算结果还表明，外延材料组份的均匀性对红外光谱的吸收边有很大的影响．运用理论计算对实验中测得的光谱曲线进行了分析，发现ＭＯＣＶＤ工艺存在着一种部分过饱和态的生长机制，并发现负禁带ＨｇＴｅ薄膜也具有一定的透光特性．     

云母表面不同厚度VO2薄膜的红外光学特性

以天然白云母的解理面为基底,采用无机溶胶-凝胶法在其表面制备不同厚度的VO2薄膜,并研究了厚度对VO2薄膜的微观结构和红外光学特性的影响.利用SEM、XRD等手段分析了薄膜的表面形貌和晶体结构,利用原位FTlR分析了VO2薄膜半导体-金属相变特性.结果表明,云母表面VO2薄膜室温下具有(011)择优生长取向,随着厚度增...     

HgCdTe表面氧化特性

利用Ｘ射线光电子谱对ＨｇＣｄＴｅ表面氧特性进行了研究，对不同工艺过程中的ＨｇＣｄＴｅ表面进行了测量、分析。结果表明ＨｇＣｄＴｅ表面的自生氧化与表现处理工艺密切相关，说明ＨｇＣｄＴｅ表面钝化前的表面预处理直接影响钝纶层／ＨｇＣｄＴｅ的界面特性。     

ZnS对HgCdTe器件的表面覆盖及其输运特性的影响

利用成熟的ＨｇＣｄＴｅ器件生产工艺制备了ＨｇＣｄＴｅＨａｌｌ器件,利用Ａｒ束溅射沉积技术在ＨｇＣｄＴｅＨａｌｌ器件表面实现了ＺｎＳ介质薄膜的代温生长;用低浊变磁场Ｈｌｌ测量技术对ＺｎＳ薄膜覆盖前后的Ｈａｌｌ器件输运特性进行了研究,分析了ＺｎＳ薄膜的沉积生长对器件中ＨｇＣｄＴｅ晶体表面、体内载流子的分布、迁移率的影响。实验证明,利用文中的Ａｒ＾＋束溅射沉积技术在ＨｇＣｄＴｅ器件表面进行ＺｎＳ介质膜生     

长波光导HgCdTe探测器的输运特性

测量了长波光导ＨｇＣｄＴｅ线列探测器在１．２～３００Ｋ的电阻率－温度（Ｒ－Ｔ）特性，结果表明：高性能和低性能探测元的Ｒ－Ｔ特性明显不同，前者有与正常ＨｇＣｄＴｅ材料Ｒ－Ｔ关系相似的变化规律，后者则与简并ＨｇＣｄＴｅ材料相似．探测器的性能与最大电阻温度有对应关系     

金属有机化合物汽相外延碲镉汞薄膜的进展

回顾了金属有机化合物汽相外延碲镉汞薄膜的发展历程，简要叙述了ＭＯＶＰＥＨｇＣｄＴｅ薄膜的三种主要技术，与ＨｇＣｄＴｅ晶格匹配和失配的衬底材料，各种金属有机物源和掺杂研究的新近进展。还介绍了ＭＯＶＰＥ－ＨｇＣｄＴｅ薄膜和探测器目前达到的水平。大量结果已经表明，ＭＯＶＰＥ生长的ＨｇＣｄＴｅ薄膜的质量适合于制造高质量的光伏型探测器，ＭＯＶＰＥ是一种原位生长先进的ＨｇＣｄＴｅ红外焦平面列阵既实用又富生命力     

多晶薄膜CdS／CdTe太阳电池

报道了转换效率为１４．６％～１５．８％的多晶薄膜ＣｄＳ／ＣｄＴｅ太阳电池的研制。用ＭＯＣＶＤ法，在玻璃衬底上制备ＳｎＯ＿２和ＳｎＯ＿２：Ｆ薄膜，水溶液化学淀积法获得８０～１００ｎｍ厚的ＣｄＳ薄膜和密堆积升华法制备５μｍ厚ＣｄＴｅ薄膜，ＣｄＳ／ＣｄＴｅ太阳电池的短路电流密度高达２４～２５ｍＡ／ｃｍ￣２。同时，对各层薄膜晶形和微观结构进行了分析研究。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.