正交试验研究制备工艺对片状银粉性能的影响

采用正交试验法,分析了前驱体球状银粉的制备及球磨工艺对最终片状银粉性能的影响。经优选得出的工艺参数组合是:硝酸银初始质量浓度为60g/L,水合联氨初始质量浓度为80g/L,ζ(十二烷基硫酸钠:硝酸银)为0.2%等。该工艺参数组合制备的片状银粉性能很好,比表面积达0.697m2/g,方阻为3.2mΩ/□。     

正交试验法研究片状银粉性能

采用正交试验法,分析了前驱体球状银粉的制备及球磨工艺对最终片状银粉性能的影响.经优选得出的工艺参数组合是:硝酸银初始质量浓度为60 g/L,水合联氨初始质量浓度为80 g/L,ζ(十二烷基硫酸钠 : 硝酸银)为0.2%等.该工艺参数组合制备的片状银粉性能很好.     

丁二酸作分散剂制备球形银粉的研究

以硝酸银为原料,甲醛为还原剂,丁二酸为分散剂,通过液相还原法制备了球形银粉。研究了丁二酸用量、硝酸银浓度、甲醛浓度、反应体系pH值对所制得银粉粒径的影响。结果表明:在c(硝酸银)为0.02 mol/L,c(甲醛)为1.44 mol/L,反应体系pH值为12.5～13.0的条件下,制备出了平均粒径为3μm的高纯球形银粉。     

超细银粉的制备及其导电性研究

用化学还原法在醇水体系中制备出平均颗粒粒径为 0.8~1.2 μm、分散性好的超细球银。讨论了表面活性剂、还原剂的种类、温度、硝酸银含量及 pH 值对球银颗粒粒径和分散性的影响。将所得超细球银在水体系中高效率球磨得分散性好的光亮片状银粉,平均粒径<6 ìm,比表面积 0.7~1.3 m2/g。讨论了吸附在银粉表面的有机物的种类和比表面积对片银导电性能的影响,结果表明:比表面积越大,导电性越好。     

球形导电银粉的形貌与粒径控制

采用化学还原法,以聚乙烯吡咯烷酮(Polyvinylpyrrolidone,PVP)为保护剂,以抗坏血酸为还原剂,还原银氨溶液等制备粒度分布窄的球形导电银粉.利用XRD和SEM对所得银粉进行了表征.结果表明,在本实验条件下,只有以银氨溶液为前驱体时,才能形成粒度分布窄,表面光滑的规则球形银粉.氨水用量对银粒子粒径影响最...     

电磁屏蔽用低松比片状银粉的制备

研究了化学还原-机械球磨制备电磁屏蔽用低松比片状银粉的生产工艺,确定了各工序主要影响因素的优化条件。用激光粒度分布仪、SEM、比表面测定仪及松装比测定装置对所制产品进行了表征。结果表明:所制超细银粉和片状银粉平均粒径、松装密度、比表面积分别为:1.0μm和13.5μm、1.7g/cm3和0.4g/cm3、0.8m2/g和1.8m2/g。用所制银粉生产的电磁屏蔽漆具有电阻小,屏蔽效能高等优点。     

以苯并三氮唑为分散剂的高分散银粉制备工艺研究北大核心CSCD

以硝酸银(AgNO3)为银源、抗坏血酸为还原剂、苯并三氮唑(BTA)为分散剂,通过液相还原法制备了分散性好的超细银粉。实验研究了BTA用量,反应温度和还原剂溶液pH值等对制得银粉形貌和粒径的影响,并通过红外光谱分析了分散剂BTA的作用机理。结果表明:采用BTA为分散剂可以明显提高银粉的分散性,制得高分散的球形银粉;升高反应温度会降低银粉的粒径,但温度过高会导致银粉颗粒之间的团聚;通过调节还原剂溶液的pH值,可以将银粉的平均粒径控制在0.83~2.40μm;红外光谱分析表明,BTA分子能吸附在银粒子的表面,从而产生空间位阻作用有效阻止银颗粒间的团聚。     

化学还原法制备电子浆料用超细银粉

用AgNO3作原料,抗坏血酸作还原剂,柠檬酸三钠作分散剂,采用化学还原法制备超细球形银粉。通过扫描电镜、激光粒度分析仪分析银粉的形貌和粒度。研究了分散剂的用量、反应温度、溶液初始pH值对银粉分散性和粒度的影响。结果表明,当m(柠檬酸三钠)/m(AgNO3)为0.08,温度为40℃,溶液初始pH值为7时,能够获得粒度较小、分散性优良的银粉。将该银粉制成浆料,印刷在石英玻璃上,使用四探针测试仪测得烧结膜的电阻率为10×10–3?.cm,电性能良好。     

厚膜钯银导体超声丝焊性能的改进

在钯银导体浆料配方中采用钯银比为1:10,高温粘结相中加入适量的氧化物和玻璃(粒度小于5μm),银粉和钯粉经化学细化处理(粒度小于5μm,颗粒呈球形),可使钯银导体的金属丝焊性能得到大的改善。     

银微粉制备过程中比表面积影响因素的研究

采用液相化学还原法制备了高比表面积的银微粉,通过分析测试银微粉比表面积的变化情况,研究了各种因素如PVP分散剂用量、银质量浓度、碳酸钠用量、反应温度及混合并流压强等对银微粉比表面积的影响。结果表明:制备比表面积为6~9 m2/g的银微粉的最佳条件为:PVP分散剂用量为银量的2.0%~2.5%(质量分数),银质量浓度40~50 g/L,碳酸钠用量35~40 g/L,温度35~45℃,并流压强0.4~0.6 MPa。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.