共查询到20条相似文献,搜索用时 671 毫秒
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作为第三代宽禁带半导体器件,GaN基HFET功率器件具耐高压、高频、导通电阻小等优良特性,在电力电子器件方面也具有卓越的优势。概述了基于电力电子方面应用的AlGaN/GaN HFET功率器件的研究进展。从器件的结构入手,介绍了AlGaN/GaN HEMT的研究现状,从栅材料的选取以及栅介质层的结构对器件性能的影响着手,对AlGaN/GaN MIS-HFET的研究进行了详细的介绍。分析了场板改善器件击穿特性的原理以及各种场板结构AlGaN/GaNHFET器件的研究进展。论述了实现增强型器件不同的方法。阐述了GaN基HFET功率器件在材料、器件结构、稳定性、工艺等方面所面临的挑战。最后探讨了GaN基HFET功率器件未来的发展趋势。 相似文献
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通过计算AlGaN/GaN HEMT二维电子气中的电势、载流子以及调制掺杂载流子寿命,得到AlGaN/GaN HEMT电容和充电时间,研究了AlGaN掺杂层浓度和厚度对器件的时间响应分析了AlGaN/GaN HEMT器件的高频特性。结果表明,栅电容随着AlGaN掺杂层浓度和厚度的增加逐渐减小。随着AlGaN层掺杂浓度的增大,电容充电时间先减后增,当掺杂浓度达到 时,电容充电时间达到极小值,在AlGaN掺杂层厚度等于7nm时电容充电时间最短。 相似文献
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《固体电子学研究与进展》2016,(5)
SiC衬底GaN高电子迁移率晶体管(HEMT)综合了AlGaN/GaN异质结优异的输运特性与SiC衬底高导热性能,在高频、宽带、高效、大功率应用领域表现出显著的性能优势。但GaN外延材料中存在高密度的缺陷,影响了导电沟道的散热,散热问题成为影响GaN HEMT性能进一步发挥的主要障碍。本文分析了GaN外延材料高缺陷密度形成的原因,介绍了近年来国外正在开展的基于转移技术金刚石衬底GaN HEMT技术,解决GaN HEMT散热问题的研究进展。研究结果表明,基于转移技术的金刚石衬底GaN HEMT有望成为继SiC衬底GaN HEMT之后的下一代固态微波功率器件主导型器件技术。 相似文献
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Ka波段AlGaN/GaN HEMT的研制 总被引:1,自引:0,他引:1
为了提高AlGaN/GaN HEMT的频率,采用了缩小源漏间距、优化栅结构和外围结构等措施设计了器件结构,并基于国内的GaN外延片和工艺完成了器件制备.测试表明所研制的AlGaN/GaN HEMT可以满足Ka波段应用.其中2×75μm栅宽AlGaN/GaN HEMT在30V漏压下的截止频率为32GHz,最大振荡频率为1... 相似文献
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Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2×1016 to 5×1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons'' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. 相似文献
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14W X波段AlGaN/GaN HEMT功率MMIC 总被引:2,自引:1,他引:1
报道了研制的SiC衬底AIGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaNHEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9~11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势. 相似文献
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《Microelectronics Reliability》2015,55(2):347-351
The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 μm, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. 相似文献
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介绍了一种采用磁控溅射AlN介质作为绝缘层的的SiC衬底AlGaN/GaN MIS-HEMT.器件研制中采用了凹槽栅和场板结构.采用MIS结构后,器件击穿电压由80 V提高到了180 V以上,保证了器件能够实现更高的工作电压.在2 GHz、75 V工作电压下,研制的200μm栅宽AlGaN/GaNMIS-HEMT输出功率密度达到了14.4 W/mm,器件功率增益和功率附加效率分别为20.51 dB和54.2%. 相似文献
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在8英寸(1英寸=2.54 cm)的Si衬底上采用金属有机化学气相沉积(MOCVD)生长了高质量、无龟裂的GaN薄膜和AlGaN/GaN高电子迁移率晶体管(HEMT)结构.通过调节应力调控层的结构,厚度为5 μm的GaN膜层翘曲度低于50 μm.采用X射线衍射(XRD)对GaN薄膜的(002)和(102)衍射峰进行扫描,其半峰全宽(FWHM)分别为182和291 arcsec.透射电子显微镜(TEM)截面图显示GaN外延层的位错密度达到了3.5×107/cm2,证实了在大尺寸Si衬底上可以制作高质量的GaN薄膜.AlGaN/GaN HEMT结构的二维电子气浓度和载流子迁移率分别为9.29×1012/cm2和2 230 cm2/(V·s).基于这些半绝缘AlGaN/GaNHEMT结构所制作的功率电子器件的输出电流可达20 A,横向击穿电压可达1 200 V. 相似文献
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A novel AlGaN/GaN high electric mobility transistor(HEMT) with polyimide(PI)/chromium(Cr) as thepassivationlayerisproposedforenhancingbreakdownvoltageanditsDCperformanceisalsoinvestigated.The Cr nanoparticles firstly introduced in PI thin films by the co-evaporation can be used to increase the permittivity of PI film. The high-permittivity PI/Cr passivation acting as field plate can suppress the fringing electric field peak at the drain-side edge of the gate electrode. This mechanism is demonstrated in accord with measured results. The experimental results show that in comparison with the AlGaN/GaN HEMTs without passivation, the breakdown voltage of HEMTs with the PI/Cr composite thin films can be significantly improved, from 122 to 248 V. 相似文献
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Young Chul Choi Milan Pophristic Ho-Young Cha Boris Peres Michael G. Spencer Lester F. Eastman 《Electron Devices, IEEE Transactions on》2006,53(12):2926-2931
An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe-doped GaN buffer on OFF-state breakdown characteristics, HEMT devices with an Fe-doped GaN buffer on Si substrates were fabricated along with conventional devices utilizing an unintentionally doped GaN buffer on Si substrates. The device characteristics were compared. While HEMT devices with the conventional structure showed an extremely unstable OFF-state breakdown behavior due to punchthrough to the Si substrate, it was demonstrated that an Fe-doped GaN buffer layer on a Si substrate successfully suppressed the premature failure caused by Si-induced breakdown. As a result, the AlGaN/GaN HEMTs with an Fe-doped GaN buffer on Si substrates exhibited much more consistent and enhanced breakdown voltages, when compared with the conventional devices. Consequently, it is highly desirable that AlGaN/GaN HEMTs on Si substrates have an Fe-doped GaN buffer layer in order to achieve stable and robust OFF-state breakdown characteristics 相似文献