基于Ir(piq)3的红色磷光有机电致发光器

采用真空蒸镀法制备了结构为ITO/NPB(20nm)/CBP(3nm)/CBP∶Ir(piq)3(z%,xnm)/TPBi(10nm)/Alq3(20nm)/Cs2CO3∶Ag2O(2nm,20%)/Al(100nm)的器件。研究了掺杂浓度和厚度对器件性能的影响。首先选定Ir(piq)3∶CBP层的厚度为5nm,调节掺杂浓度。结果是当掺杂浓度为10%时,器件的效率和亮度较好;驱动电压为16V时,最大亮度为8 810cd/m2。然后在10%的掺杂浓度下,调节CBP∶Ir(piq)3层的厚度。当厚度为20nm时,器件的性能较好。驱动电压为12V时,电流密度为193mA/cm2,效率为11.92cd/A;驱动电压为19V时,电流密度为302.45mA/cm2,亮度为10 990cd/m2。无论在何种浓度和厚度下,器件的色坐标都在红光范围内。     

中红外硅基调制器研究进展（特邀）

硅材料在1.1~8.5 μm有非常低的吸收损耗,因此硅基光电子学有望扩展到中红外波段。并且随着通信窗口扩展、气体分子检测、红外成像等应用需求的出现,硅基中红外波段器件研发工作的开展势在必行。在中红外波段硅基光电子器件中,硅基调制器有着举足轻重的地位:它是长波光通信链路中不可或缺的一环,还可以应用在片上传感系统中提高信噪比、实现光开关等功能。研究发现,相比于近红外波段,硅和锗材料在中红外波段有更强的自由载流子效应和热光效应,因此,基于硅基材料的中红外调制器具有独天得厚的优势。系统总结了中红外硅基调制器的发展趋势和研究现状,介绍了基于硅和锗材料的电光调制器以及热光调制器的工作原理和最新研究进展,最后对中红外硅基调制器进行了总结与展望。     

基于宽度调制谐振腔的光子晶体电光调制器

针对目前电光调制器插入损耗高的问题,提出了一种基于宽度调制(WM)型谐振腔的光子晶体电光调制器。该器件由输入端纳米线波导、硅基光子晶体波导和WM型谐振腔组成,前二者的连接处采用锥形结构,用于减少2种波导之间的级联损耗。根据时域耦合模理论与等离子体色散效应,采用WM型谐振腔和PN掺杂结构实现对横电(TE)模的调制,并应用二维时域有限差分法对其性能进行仿真分析。仿真结果表明:该器件在调制电压为1.24 V时可以实现中心波长为1553.91 nm的TE模窄带通断调制功能;在工作波长为1550~1560 nm时的插入损耗为0.16 dB,消光比为19.73 dB,调制深度为0.9894,Q值达1.5×104,尺寸约为20μm×9μm。     

掺杂位置对基于马赫-曾德尔干涉的硅光调制器的消光比的影响

在基于马赫-曾德尔干涉的硅光调制器中,载流子吸收会极大的影响器件的消光比。并且,不同的掺杂位置会引起注入的载流子的分布不一样,从而导致不同的消光比。从实验上研究了这一现象,实验中的器件采用0.18 μm CMOS工艺制作在SOI材料上。实验表明,掺杂位置离脊波导的边沿0.5 μm左右时,器件会获得最佳的消光比。     

锗硅非对称耦合量子阱相位调制器特性的研究

为了研究和论证锗硅材料体系在器件的工艺制备和理论性能上的优势,拓展锗硅量子阱结构的应用范围,采用数值仿真结合实际器件制备的方法,进行了理论分析和实验验证,设计了一种基于Ge/SiGe非对称耦合量子阱材料的光学相位调制器,并在实验测试中验证了该理论的正确性。结果表明,当电场超过40 kV/cm时,该材料在1450 nm波长处可以达到最高0.01的电致折射率变化;经测试发现,实际制备的器件在1.5 V的反向偏置电压下,实现了1530 nm波长处2.4×10^-3的电致折射率变化,对应的V_πL_π=0.048 V·cm,在同类型锗硅光调制器中达到了先进水平。该研究为硅基集成光调制器的进一步发展开辟了新的方向。     

高性能硅和铌酸锂异质集成薄膜电光调制器 （特邀）

硅基光子集成平台因其高集成度、CMOS工艺兼容性等特点在光通信领域受到了广泛的关注,而电光调制器作为光通信系统中最为重要的器件之一,承担着将电信号加载至光信号上的关键作用,为打破硅基调制器的性能限制,可利用硅和铌酸锂的大面积键合技术以及铌酸锂低损耗波导刻蚀技术实现高性能硅和铌酸锂异质集成薄膜电光调制器,目前该类调制器的性能可达半波电压3 V,3 dB电光带宽超过70 GHz,插入损耗小于1.8 dB, 消光比大于40 dB。文中对比了硅和铌酸锂异质集成调制器的研究现状并介绍了该异质集成薄膜调制器的结构设计与工艺实现方法。     

大功率量子级联激光器的光学与热学协同优化设计北大核心CSCD

针对大功率量子级联激光器存在热积累严重的问题,本文基于MBE与MOCVD结合的二次外延生长InP基量子级联激光器结构的工艺方法,设计优化中波单管4W连续光输出的大功率量子级联激光器光学与散热性能。通过COMSOL软件对器件结构进行建模,设计器件光学和热学结构模型,分析不同结构参数对器件性能的影响,得到最优结构参数:在In053Ga047As层厚度为50nm,波导下包层InP为1μm,上包层InP为2μm,封装金层厚度为3μm时,器件光学和热学综合性能最优,其中波导光限制因子为074,核心区温度为378 K。本文研究相关结论可为后续大功率中波量子级联激光器结构与工艺设计提供指导。     

掺杂浓度和厚度对有机白光器件性能的影响

介绍了结构为ITO/2T(20nm)/NPBX(15nm)/DPVBi(15nm)/Alq3:Rubrene(10,x)nm/Alq3(40nm)/LiF(0.5nm)/Al的掺杂方法制备的白光器件。其中掺杂浓度x分别为1%、2%、3%、4%和5%(质量分数)。这种结构充分利用了Rubrene在有机电致发光器件中的良好的掺杂特性,从而使器件发射出性能较好的白光。首先讨论了Rubrene的掺杂浓度对器件性能的影响。当Rubrene掺杂浓度是3%(质量分数)时,色度最好(0.32,0.32)且色坐标稳定。在此基础上,讨论了掺杂层厚度对器件性能的影响。掺杂层的厚度Y分别为10,15,20,25,30nm变化时,制作了5个器件。随着掺杂层厚度的增加,器件发出的蓝光和黄光相对平衡,色度较好。其中掺杂层厚度为20nm时,器件的效率和亮度均最高,分别达到5.10cd/A和17130cd/m2。     

基于光子晶体和纳米线波导的马赫-曾德尔型调制器

提出了一种基于光子晶体和纳米线波导的马赫-曾德尔型调制器.该调制器由硅基光子晶体平板波导、纳米线波导和光子晶体多模干涉耦合器(MMI)构成。在光子晶体与纳米线波导连接处采用了锥型结构,用于减少模式失配造成的损耗。利用时域有限差分法(3D-FDTD)进行仿真分析,结果表明,该调制器在工作波长1 550 nm下的插入损耗为0. 3 dB,消光比为15. 1 dB,器件尺寸仅46μm×8μm×0. 22μm,调制带宽可以达到68 GHz,且工作区域覆盖了以1 551 nm为中心波长20 nm的通信波段。该调制器结构紧凑,易于集成,可应用于高速光通信系统。     

用有机层厚度匹配法制作的有机电致蓝光器件

采用各有机层厚度匹配的方法制备了具有较好性能的有机电致蓝光器件.器件的基本结构为:ITO/2T-NATA/NPBX/DPVBi/Alq3/LiF/Al.当2T-NATA的厚度为20nm, NPBX的厚度为15nm, DPVBi的厚度为35nm, Alq3的厚度为30nm, LiF的厚度为0.5nm时,器件的性能最好.在电流密度为796mA/cm2时,最大亮度达到11600cd/m2,在电流密度为30mA/cm2,器件的效率达到最大为2.32cd/A.器件的开启电压较低,在6V工作电压下,亮度达到207.3cd/m2.在5～13V较大的范围内,色度几乎不随驱动电压或电流密度的改变而改变,稳定在x=0.16,y=0.15附近.     

聚合物复合薄膜DR13/PMMA的制备及其光学特性

薄膜的厚度、折射率和传输损耗等参数在电光系数的确定和光波导器件的设计和制作过程中都是重要的参考数据。采用旋涂法制备了三种不同质量比的偶氮化合物染料分散红13(DR13)与聚合物聚甲基丙烯酸甲酯(PMMA)复合薄膜;利用分光光度计测量样品的吸收光谱;利用棱镜耦合仪测量了薄膜的厚度和折射率,并对不同波长下的折射率进行拟合得到折射率色散曲线;采用视频摄像技术研究样品的光传输特性,利用自己编写的计算机程序来处理其实验结果。DR13/PMMA复合薄膜在300nm和500nm处有两个大的吸收峰,而在其他波段,尤其是在通信波段没有明显吸收。薄膜的膜厚大约为1~2μm,其折射率随着质量比的增加而增大,随着激光波长的增大而降低,膜厚和折射率的误差分别为3.2×10-1μm和1.5×10-3。三种质量比(10%,15%和20%)的薄膜传输损耗分别为1.5269dB/cm,2.7601dB/cm和3.6291dB/cm,可以看出随着DR13质量比的增大,光传输损耗也逐渐增大,即DR13的含量对于传输损耗的影响较大。     

Strained-layer multiple-quantum-well InGaAs/GaAs waveguidemodulators operating around 1 μm

Detailed experimental results on the properties of multiple-quantum-well waveguide modulators on strained InGaAs/GaAs layers are presented. Transmission and photocurrent measurements are performed using a tunable Ti-sapphire-laser. The spectra reveal an absorption edge shift as large as 60 nm at 5 V reverse bias. Optimum performance is achieved around a wavelength of 1 μm, where an extinction ratio of up to 20 dB is obtained with an absorption loss of less than 2 dB/cm. The overall insertion loss of the modulator approaches a constant value of 6.5 dB at higher wavelengths (λ⩾980 nm) which is shown to be mainly affected by coupling losses     

Rectangular optical filter based on high-order silicon microring resonators

The rectangular optical filter is one of the most important optical switching components in the dense wavelength division multiplexing (DWDM) fiber-optic communication system and the intelligent optical network. The integrated high-order silicon microring resonator (MRR) is one of the best candidates to achieve rectangular filtering spectrum response. In general, the spectrum response rectangular degree of the single MRR is very low, so it cannot be used in the DWDM system. Using the high-order MRRs, the bandwidth of flat-top pass band, the out-of-band rejection degree and the roll-off coefficient of the edge will be improved obviously. In this paper, a rectangular optical filter based on high-order MRRs with uniform couplers is presented and demonstrated. Using 15 coupled race-track MRRs with 10 μm in radius, the 3 dB flat-top pass band of 2 nm, the out-of-band rejection ratio of 30 dB and the rising and falling edges of 48 dB/nm can be realized successfully. This work has been supported by the National Natural Science Foundation of China (No.61205062), the Scientific Research Project of Hubei Education Department (No.B2015191), and the Project of Hubei Province Universities Outstanding Youth Scientific Innovation Team (Nos.T201431 and T201633). E-mail:onlyfish@126.com      

Peltier effect in doped silicon microchannel plates

The Seebeck coefficient is determined from silicon microchannel plates（Si MCPs） prepared by photoassisted electrochemical etching at room temperature（25℃）.The coefficient of the sample with a pore size of 5×5μm²,spacing of 1μm and thickness of about 150μm is -852μV/K.along the edge of the square pore.After doping with boron and phosphorus,the Seebeck coefficient diminishes to 256μV/K and -117μV/K along the edge of the square pore,whereas the electrical resistivity values are 7.5×10^-3Ω·cm and 1.9×10^-3Ω·cm,respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon.Based on the boron and phosphorus doped samples,a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect.When a proper current passes through the device,the Peltier effect is evidently observed.Based on the experimental data and the theoretical calculation,the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m·K）, respectively.     

Optical transmission losses in polycrystalline silicon strip waveguides: Effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelength

Signal propagation delays dominate over gate delays in the ever-shrinking ultra large scale integrated (ULSI) circuits. Consequently, silicon-based monolithic optoelectronic circuits (SMOE) with their light speed signal propagation can provide unique advantages for future generations of microprocessors. For such SMOE circuits, we need optical interconnects compatible with silicon technology. Strip waveguides consisting of polycrystalline silicon (polySi) clad with SiO₂ offer excellent optical confinement and ease of fabrication that are ideal for such interconnect applications. One major challenge with using this material system, however, is its insertion loss. In this paper we provide techniques for minimizing optical transmission losses in polySi strip waveguides. Our previous work using polySi strip waveguides, showed an optical transmission loss of 15 dB/cm at λ=1.55 μm, which is a communication wavelength of choice in optical fibers because it represents an absorption minimum. Similar measurements in crystalline silicon strip waveguides¹ yielded transmission losses of less than 1 dB/cm. Hitherto, in decreasing loss from 77 dB/cm to 15 dB/cm, we had minimized loss from surface scattering by improving the film surface morphology, and decreased bulk absorption with hydrogen passivation. In this paper we report a further reduction in the residual bulk loss from 15 dB/cm to 9 dB/cm. By experimenting with different waveguide core dimensions, we find that the contribution of bulk loss towards net transmission loss decreases with waveguide core thickness. Additionally, high temperature treatment provides strain relief in the polySi, decreasing transmission loss. Annealing in an oxygen ambient is not recommended because it always increases transmission loss. Hydrogen passivation improves transmission, attributable to passivation of light-absorbing dangling bond defect sites present at polySi grain boundaries. Together, these methods have resulted in the lowest measured loss value of 9 dB/cm at λ=1.55 μm. Since integrated SiGe and Ge photodetectors are more efficient at shorter wavelengths like λ=1.32 μm, transmission loss is also measured at λ=1.32 μm. Losses at the two wavelengths (1.32 μm and 1.55 μm) are similar when defects and stress in the waveguides are minimized.     

Integration of an electrooptic polymer in an integrated opticscircuit on silicon

This paper presents the joining of active nonlinear polymer waveguides with passive silicon nitride waveguides (SiO₂-Si ₃N₄-SiO₂) to form an integrated Mach-Zehnder modulator with a lateral electrode configuration on a silicon substrate. Passive and active waveguides are based on a silicon-nitride-strip guiding structure. In the active waveguide a nonlinear polymer layer is used to obtain an index modulation via the electrooptic effect. Despite the silicon nitride strip based guiding structure, 63% of the energy of the fundamental mode is guided in the nonlinear polymer (provided by Flamel Technology, Venissieux, France). Poling with field strengths up to 75 V/μm applied to the lateral electrodes has been employed to orient the chromophores. A half wave voltage of 35 V has been measured for an electrooptic coefficient of 5.8 pm/V at a wavelength of 1.3 μm. Optical loss measurements have been done on polymer and passive waveguides. The best results have been 1.8 dB/cm for the active and 0.78 dB/cm for the passive waveguides leading to a total loss of 6 dB for a modulator with an interaction length of 2.5 cm. The coupling loss between a laser diode and the passive waveguide structure was measured to be at least 4.6 dB using a microscope objective and piezo-electric displacement elements. Stability tests under atmospheric conditions have shown a decrease of the electrooptic coefficient which might be due to the hygroscopic behavior of the active polymer. The bandwidth of the modulator has been determined to be 4 MHz     

MEMS variable optical attenuator using low driving voltage for DWDMsystems

A silicon microelectromechanical system (MEMS) variable optical attenuator with fibre connection is reported. The device requires only 8 V driving voltage. It has only 1.5 dB insertion loss, but 45 dB dynamic range, 37 ms response time, and 0.9 dB wavelength dependence loss over the C-band (1528-1561 nm)     

Silicon optical modulators at 1.3-μm based on free-carrierabsorption

Silicon optical waveguide modulators, appropriate for operation in the 1.3-1.55 μm wavelength region, have been fabricated and their performance characterized at the wavelength of 1.3 μm. The modulator structures consist of p-i-n diodes integrated with silicon waveguides; device operation is based on free-carrier absorption. Modulation depths of -6.2 dB and response times less than 50 ns have been measured. Experimental results are compared with the p-i-n diode theory. It is argued that the device is suitable for integration with silicon electronics and silicon optoelectronic devices. The response times measured for the current devices may be improved by reducing the transverse dimensions of the p-i-n structure     

A Hybrid Silicon–AlGaInAs Phase Modulator

We demonstrate a carrier depletion phase modulator based on the hybrid silicon evanescent platform. A low temperature and robust bonding process is employed to transfer III–V epitaxial layers to patterned silicon waveguides. An external electric field is applied across the doped multiple quantum wells so that carriers are depleted, resulting in an index change. The device has a voltage-length product, ${V}_{pi }$ L, of 4 V-mm at 1550 nm. An optical bandwidth of 100 nm with an extinction ratio over 10 dB is achieved. The device can handle optical power up to 28 mW.