基于高压IGBT暂态机理模型的分析与研究

随着绝缘栅双极性晶体管（IGBT）使用的电压等级越来越高,关于绝缘栅双极性晶体管（IGBT）开关暂态的研究显得尤为重要。在机理模型的基础上能细划分为MOSFET与BJT,即金属氧化层半导体场效晶体管与双极结型晶体管两个部分,对其进行建模,列举出模型参数提取方法。该模型可在Matlab中实现,把IGBT作为案例列出模型参数数值,分析比较高压开通暂态、关闭暂态与开关损耗仿真结果,以此检验机理模型对高压IGBT是否适用。     

A review of recent MOSFET threshold voltage extraction methods

The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics. The assessment focuses specially on single-crystal bulk MOSFETs. It includes 11 different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two methods for threshold voltage extraction under saturation conditions and one specifically suitable for non-crystalline thin film MOSFETs are also included. Practical implementation of the several methods presented is illustrated and their performances are compared under the same challenging conditions: the measured characteristics of an enhancement-mode n-channel single-crystal silicon bulk MOSFET with state-of-the-art short-channel length, and an experimental n-channel a-Si:H thin film MOSFET.     

射频MOSFET噪声模型研究

对0.13μm MOSFET噪声建模和参数提取技术进行了研究,在精确地提取了小信号模型参数之后,利用噪声相关矩阵技术从测量的散射参数和射频噪声参数直接提取了栅极感应噪声电流■、沟道噪声电流■和它们的相关系数,并用PRC模型中的参数来表示。将参数提取结果带入ADS中进行仿真,在2～8GHz频段上仿真结果与测量数据吻合良好。     

全耗尽SOIMOSFET辐照导致的阈值电压漂移模型

报道了全耗尽SOI MOSFET器件阈值电压漂移与辐照剂量和辐照剂量率之间的解析关系.模型计算结果与实验吻合较好.该模型物理意义明确,参数提取方便,适合于低辐照总剂量条件下的加固SOI器件与电路的模拟.讨论了抑制阈值电压漂移的方法.结果表明,对于全耗尽SOI加固工艺,辐照导致的埋氧层(BOX)氧化物电荷对前栅的耦合是影响前栅阈值电压漂移的主要因素,但减薄埋氧层厚度并不能明显提高SOI MOSFET的抗辐照性能.     

MOSFET和Poly-Si TFTs参数提取策略的研究

随着半导体制造技术的不断改善和工艺的不断升级,精确的模型参数对于代工厂和设计者尤为重要.而参数提取策略的选择是整个参数提取过程中的关键步骤.该研究以伯克利大学开发的SPICE Level-3 MOSFET和多晶硅薄膜晶体管模型为研究对象,以包括了短沟效应、窄沟效应、漏致势垒降低效应的MOSFET阈值电压方程和多晶硅薄膜晶体管统一漏电流方程作为研究出发点,然后分别讨论了模型中几个主要参数的提取方法,最后给出了参数提取的流程图.     

适于器件及电路分析的全耗尽短沟道LDD／LDSSOI MOSFET器件模型

本文系统描述了全耗尽短沟道ＬＤＤ／ＬＤＳＳＯＩＭＯＳＦＥＴ器件模型的电压电压特性。该模型扩展了我们原有的薄膜全耗尽ＳＯＩＭＯＳＦＥＴ模型，文中着重分析了器件进入饱和区后出现的沟道长度调制效应，及由于ＬＤＤ／ＬＤＳ区的存在对本征ＭＯＳ器件电流特性的影响。     

功率MOSFET参数测试仪的设计

功率MOSFET参数测试仪是用来测试功率MOSFET电特性参数的仪器设备（如阈值电压、跨导等）。以单片机为核心,介绍功率MOSFET参数测试仪的原理、设计及实现,设计了电特性参数测试的具体电路,编写了测试控制程序,通过对设计出的测试仪系统进行实验和调试,可以准确测量功率MOSFET的阈值电压、跨导、栅源漏电流、零栅压漏极电流及耐压。     

基于自动微分技术的器件模型参数提取算法

自动微分 (AD)技术以非标准分析为理论基础 ,是计算机数值计算领域中的一种很有前途的方法。文中提出了基于 AD技术的器件模型参数提取算法 ,在 Visual C+ +平台编制了模型参数提取程序 ,对所建立的基于表面势的 MOSFET模型进行了有约束条件的参数提取。结果表明 ,算法收敛快、稳定性好、提取准确     

一种新的SPICE BSIM3v3 HCI可靠性模型的建立及参数优化

研究中提出了用于描述HCI(热载流子注入)效应的MOSFET可靠性模型及其建模方法,在原BSIM3模型源代码中针对7个主要参数,增加了其时间调制因子,优化并拟合其与HCI加压时间(Stress time)的关系式,以宽长比为10μm/0.5μm5 V的MOSFET为研究对象,在开放的SPICE和BSIM3源代码对模型库文件进行修改,实现了该可靠性模型。实验表明,该模型的测量曲线与参数提取后的I-V仿真曲线十分吻合,因而适用于预测标准工艺MOS器件在一定工作电压及时间下性能参数的变化,进而评估标准工艺器件的寿命。     

MOSFET模型＆参数提取

器件模型及参数作为工艺和设计之间的接口，对保证集成电路设计的投片成功具有决定意义。本文介绍了电路模拟中常用的几种MOSFET模型，并着重探讨了使用自动参数提取软件提取一套准确的模型参数的具体工作步骤。     

CMOS／SOI电路模拟与参数提取

ＳＯＩ－ＭＯＳＦＥＴ主要模型参数得一致的提取，因而该模型嵌入ＳＰＩＣＥ后能保证ＣＭＯＳ／ＳＯＩ电路的正确模拟工作，从ＣＭＯＳ／ＳＯＩ器件和环振电路的模拟结果和实验结果看，两者符合得较好，说明我们所采用的ＳＯＩ ＭＯＳＦＥＴ器件模型及其参数提取都是成功的。     

凹槽栅MOSFET凹槽拐角的作用与影响研究

短沟道效应是小尺寸ＭＯＳＦＥＴ中很重要的物理效应之一，凹槽栅ＭＯＳＦＥＴ对短沟道效应有很强的抑制能力，通过对凹槽栅ＭＯＳＦＥＴ结构，特性的研究，发现凹槽拐角对凹槽栅ＭＯＳＦＥＴ的阈值电压及特性有着显著的影响，凹槽拐角处的阈值电压决定着整个凹槽栅ＭＯＳＦＥＴ的阈值电压，凹槽拐角的曲率半径凹槽ＭＯＳＦＥＴ一个重要的结构参数，通过对凹槽拐角的曲率半径，源漏结深及沟道掺杂浓度进行优化设计，可使凹槽栅ＭＯＳ     

深结短沟道MOS晶体管准二维阈值电压模型

提出了一个新的短沟道MOS晶体管表面势的准二维解析模型。不同于经典模型,该模型对沟道耗尽层横向剖分,由高斯定理导出沟道耗尽层电势的一维微分方程,方程考虑了漏、源的横向电场对沟道耗尽层厚度的影响。求解方程得到了耗尽层厚度与表面势的关系函数,由此得出了一个包含有沟道长度的阈值电压公式。通过MEDICI软件对多种不同参数的MOS晶体管进行了仿真,此模型计算结果与MEDICI仿真数据吻合较好,比电荷分享模型精度高。     

基于BSIM3的超深亚微米器件建模及模型参数提取

对适用于超深亚微米电路模拟的 MOSFET器件模型进行了研究 ,完成计入量子效应、多晶硅耗尽效应等基于 BSIM3的 MOSFET模型。针对阈值电压模型以及 I- V模型中的参数编写了模型参数提取程序 ,采用最小二乘法原理 ,并采用麦夸脱算法以降低参数提取结果对初值的依赖 ,对已有参数进行了修正。模型以及参数提取结果都分别进行了验证。     

Implementation and comparative analysis of the optimisations produced by evolutionary algorithms for the parameter extraction of PSP MOSFET model

The study proposes an application of evolutionary algorithms, specifically an artificial bee colony (ABC), variant ABC and particle swarm optimisation (PSO), to extract the parameters of metal oxide semiconductor field effect transistor (MOSFET) model. These algorithms are applied for the MOSFET parameter extraction problem using a Pennsylvania surface potential model. MOSFET parameter extraction procedures involve reducing the error between measured and modelled data. This study shows that ABC algorithm optimises the parameter values based on intelligent activities of honey bee swarms. Some modifications have also been applied to the basic ABC algorithm. Particle swarm optimisation is a population-based stochastic optimisation method that is based on bird flocking activities. The performances of these algorithms are compared with respect to the quality of the solutions. The simulation results of this study show that the PSO algorithm performs better than the variant ABC and basic ABC algorithm for the parameter extraction of the MOSFET model; also the implementation of the ABC algorithm is shown to be simpler than that of the PSO algorithm.     

GeSiMOSFET的纵向结构对器件性能的影响

为了研究器件参数对GeSi MOSFET器件性能的影响,本文在建立一个简单的GeSi MOSFET的器件模型的基础上,对GeSi MOSFET的纵向结构进行了系统的理论分析.确定了纵向结构的CAP层厚度、沟道层载流子面密度、DELTA掺杂浓度以及量子阱阱深之间的关系,得出了阈值电压与DELTA掺杂浓度、栅氧化层厚度及CAP层厚度之间的关系,还得出了栅压与沟道载流子面密度、栅氧化层厚度及CAP层厚度之间的关系.并且在此基础上得出了一些有意义的结果.为了更细致、精确地进行分析,我们分别对GeSi PMOSFET和GeSi NMOSFET在MEDICI上做了模拟.     

李瑞贞； 李多力； 杜寰； 海潮和； 韩郑生；

阈值电压是MOSFET最重要的参数,阈值电压模型是MOSFET模型中最重要的部分.目前模型参数的提取主要通过商业软件来完成,商业软件由于价格昂贵以及内部机理的复杂性限制了它们的应用.本文提出了遗传算法和局部优化相结合来提取BSIM SOI阈值电压模型参数的方法,该方法简单易用,且具有较高的精确度,适合推广使用.     

Determination of Threshold Voltage and Mobility of MOSFET by Proportional Difference Operator

Proportional Difference Operator (PDO) method is proposed for the first time to determine the key parameters of a MOSFET, including the threshold voltage and carrier mobility.This methoc is applied to the transfer characteristic of a MOSFET first, and then the effect of gate voltage on carrier mobility is considered. The dependence of carrier mobility on the gate voltage is obtained.     

Neural network based MOSFET channel length and width decision method for analogue integrated circuits

The channel length and width of a MOSFET are two important parameters selected by the experience of the integrated circuit designer. Since drain current of a transistor is directly adjusted by the aspect ratio, the wrong selection of these parameters changes the circuit characteristics. In this work neural networks are used to decide the most suitable selection of channel length and width of MOSFET. Both p-channel and n-channel transistors are modelled by multi layer perceptron (MLP) neural network and the channel length and width are predicted by MLP. MOSFET level 3 is modelled by MLP, training and test data are obtained from HSPICE design environment with YITAL 1.5μ parameters. Developed network is tested with the current mirror and the differential amplifier circuits. Estimated aspect ratios for each transistor are compared with the HSPICE simulation results.     

MOSFET modeling for RF IC design

High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and HF. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a MOSFET are analyzed to obtain a physics-based RF model. The procedures of the HF model parameter extraction are also developed. A subcircuit RF model based on the discussed approaches can be developed with good model accuracy. Further, noise modeling is discussed by analyzing the theoretical and experimental results in HF noise modeling. Analytical calculation of the noise sources has been discussed to understand the noise characteristics, including induced gate noise. The distortion behavior of MOSFET and modeling are also discussed. The fact that a MOSFET has much higher "low-frequency limit" is useful for designers and modelers to validate the distortion of a MOSFET model for RF application. An RF model could well predict the distortion behavior of MOSFETs if it can accurately describe both dc and ac small-signal characteristics with proper parameter extraction.