真空度对碳纳米管生长过程的影响

利用等离子体增强热丝化学气相沉积系统在沉积有过渡层Ta和催化剂层NiFe的Si衬底上制备出准直碳纳米管，并用扫描电子显微镜研究了它们的生长和结构，结果表明真空度对其生长和结构有较大的影响。当真空度为4000Pa和2000Pa时，准直碳纳米管较容易生长，并且真空度为2000Pa时生长的碳纳米管平均长度大于真空度为4000Pa时碳纳米管的平均长度。但真空度为667Pa时碳纳米管生长困难。根据热力学和辉光放电理论，分析了真空度对准直碳纳米管生长和结构的影响。     

理论分析辉光放电对碳纳米管生长速率的影响

利用负偏压增强热丝化学气相沉积，在沉积过渡层Ta和催化剂NiFe层的Si衬底上制备了碳纳米管，并用扫描电子显微镜研究了它们的形貌。发现辉光放电后，碳纳米管的平均长度比无辉光放电时大，并且随着负偏压的增大而增大，即辉光放电增大了它们的生长速率。结合辉光放电和扩散理论分析了辉光放电对碳纳米管生长速率的影响，结果表明在生长碳纳米管的过程中，由于辉光放电的产生，碳在催化剂中的活度得到增强，从而增大了碳纳米管的生长速率。     

理论分析辉光放电对碳纳米管生长速率的影响

利用负偏压增强热丝化学气相沉积 ,在沉积过渡层Ta和催化剂NiFe层的Si衬底上制备了碳纳米管 ,并用扫描电子显微镜研究了它们的形貌。发现辉光放电后 ,碳纳米管的平均长度比无辉光放电时大 ,并且随着负偏压的增大而增大 ,即辉光放电增大了它们的生长速率。结合辉光放电和扩散理论分析了辉光放电对碳纳米管生长速率的影响 ,结果表明在生长碳纳米管的过程中 ,由于辉光放电的产生 ,碳在催化剂中的活度得到增强 ,从而增大了碳纳米管的生长速率。     

衬底温度对碳纳米管生长和结构的影响

用CH4、NH3和H2为反应气体,利用等离子体增强热丝化学气相沉积在沉积有Ta缓冲层和Ni催化剂层的Si衬底上制备了准直碳纳米管,并用扫描电子显微镜和透射电子显微镜研究了它们的生长和结构随温度的变化.结果表明生长的准直碳纳米管是竹节型结构,其直径随衬底温度的降低而减小,生长速率随衬底温度的升高有一极值.从催化剂在衬底温度作用下的变化开始,分析了衬底温度对碳纳米管生长和结构的影响.     

沉积条件对CVD碳纤维生长的影响

用CH4、H2或包含NH3的混合气体为反应气体,利用负偏压增强热丝化学气相沉积方法在沉积有过渡层(Ta或Ti)和催化剂层(NiFe)的Si衬底上制备碳纤维,并用扫描电子显微镜研究了它们的生长和结构,结果发现不同的沉积条件对碳纤维的生长和结构有很大的影响。在无辉光放电的条件下,衬底温度较低时碳纳米管或纤维生长困难;提高衬底温度,能够弯曲生长;在辉光放电的条件下,则呈现定向生长的特点。     

N2对碳纳米管生长和结构的影响

用热丝化学气相沉积制备了碳纳米管,并用扫描电子显微镜和透射电子显微镜研究了它们的结构.结果表明,用CH4和H2为反应气体制备的碳纳米管是弯曲和中空的,它们的直径较大,生长速率较低;在反应气体中加入N2气后,碳纳米管的平均直径减小,生长速率增大,它们是准直的和竹节型的.分析和讨论了N2对碳纳米管生长和结构的影响.     

氨气等离子体下游区合成碳纳米管的研究

利用介质阻挡放电等离子体化学气相沉积技术，在蒸镀有13nm Ni催化剂层的Si基材上，以CH4为碳源，H2与NH3的混和物为刻蚀和稀释气体，在630和750℃的不同温度条件下合成碳纳米管。实验研究了不同氨气比例条件下碳纳米管的生长情况，并给出了合成碳纳米管的最佳氨气含量区间,SEM和TEM测试发现，所合成的碳纳米管具有竹节型结构，Ni催化剂形貌表明碳纳米管生长符合顶端机制,实验还发现氨气含量对碳纳米管的生长影响很大，并对其原因进行了初步的分析．     

不同工作参数下Ni/Ag双层膜GDOES深度谱的比较

随着射频辉光放电光谱仪在镀层和薄膜深度剖析中的应用逐渐深入,人们对其工作原理、设置参数对测试的影响也越来越关注。本文通过在不同气体工作压强和溅射功率下,对镍/银双层膜样品进行了辉光放电深度剖析的实验,探讨了自偏压与工作压强和溅射功率的关系。实验结果表明,自偏压随工作压强的增加而减小;随着溅射功率的增加,溅射速率随之增加,在特定的工作压强下会出现一个最大的溅射速率;溅射坑的形貌主要取决于气体的工作压强。     

热阴极辉光放电对金刚石膜沉积的影响

研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中，热阴极辉光放电特性与金刚石膜沉积工艺的关系．结果表明，适当的阴极温度是保证大电流、高气压辉光放电的必要条件．阴极的温度影响辉光放电阴极位降区的放电性质．金刚石膜的沉积速率随着气体压力(16～20kPa)的升高而上升，在18.6kPa左右出现最高值，而阳极位降区电场强度的降低使膜品质下降．放电电流(8～12A)对沉积速率的影响与气体压力的影响具有相似的规律．     

辉光功率对柔性衬底ZnO:Al薄膜性能的影响

目前,磁控溅射制备Zn O:Al薄膜时的溅射压强较低,若氩气流量不稳或腔室排气口处气流扰动会对溅射压强产生较大影响,影响成膜质量。为提高溅射薄膜质量,采用直流磁控溅射技术,在较高溅射压强下,以不同辉光功率在柔性衬底聚酰亚胺上制备了Zn O:Al薄膜。采用紫外可见分光光度计、四探针测试仪、X射线衍射仪及扫描电镜测试薄膜性能,考察了辉光功率对薄膜光学特性、电学特性、薄膜结构和表面形貌的影响。结果表明:制备的薄膜均为六方纤锌矿结构,且有明显的c轴择优取向;随着辉光功率的增大,方块电阻先减小后增大,辉光功率为50 W时最小,为15.6Ω,晶粒尺寸先增大后减小;在辉光功率为50 W时,600~800 nm波长范围内薄膜的相对透射率达到最大值96%。     

On the role of activation mode in the plasma- and hot filaments-enhanced catalytic chemical vapour deposition of vertically aligned carbon nanotubes

Catalytic chemical vapor deposition (CCVD) with different activation modes (thermal; hot filaments-enhanced; direct current plasma-enhanced and both hot filament and direct current plasma-enhanced) are achieved in order to grow vertically aligned carbon nanotubes (VA CNTs). By widely varying the power of the different activation sources of the gas (plasma, hot filaments, substrate heating) while keeping identical the substrate temperature (973 K) and the catalyst preparation, the results point out the important role of ions in the nucleation of carbon nanotubes (CNTs), as well as the etching behaviour of highly activated radicals such as H˙ in the selective growth of vertically aligned films of CNTs. Moreover, it is demonstrated that, within the deposition conditions (temperature, pressure, flow rate) used in this study, oriented carbon nanotubes can be grown only when both ions, mainly generated by the gas discharge plasma, and highly reactive radicals, mainly formed by the hot filaments, are produced in the gas phase. We propose that highly energetic ions are needed to nucleate the carbon nanotubes by increasing the carbon concentration gradient whereas the highly reactive radicals allow the selective growth of vertically aligned CNTs by preventing carbon deposition on the whole surface through chemical etching of edge carbons in graphene sheets.     

定向生长阵列化纳米碳管研究进展

本文介绍了目前有关定向纳米碳管制备的一些主要方法 ,并概述了定向纳米碳管的形态结构特征。定向生长的纳米碳管阵列由于其优越的电子发射特性 ,因而在平面显示器等方面具有良好的应用前景     

定向纳米碳管微观结构的观察和生长机制探讨

SiO2表面溅射铁膜后用CVD法制备了定向纳米碳管。用扫描电镜、透射电镜和高分辨透射电镜对顶部催化剂及包裹于管内的催化剂、纳米碳管的结构和所形成的竹节状形貌进行了观察。以液态生长纳米碳管为基础提出了一种纳米碳管生长机制。     

预置镍化学气相沉积法制备定向碳纳米管(英文)

采用化学气相沉积法(CVD),在溅射了镍薄膜的硅基底上制备了定向碳纳米管薄膜。对镍薄膜的氨气预处理过程及其机理进行了研究。结果发现预处理后的岛状区域随着薄膜厚度的增加而增加,纳米粒子区域的变化则与之相反。对5nm的镍薄膜进行预处理能获得细化和均匀分布的纳米粒子,有利于定向碳纳米管的生长。碳纳米管的生长过程及其细微结构与温度有很大关系。碳源的分解、碳原子在催化剂内部的扩散以及催化剂粒子的团聚三者之间的竞争决定了碳纳米管的生长情况。本文分析了碳纳米管的顶部生长模式及该模式下催化剂粒子的形态变化。     

负衬底偏压对碳纳米管生长的影响

利用负衬底偏压增强热灯丝化学气相沉系统制备了碳纳米管，用扫描电子显微镜研究了碳纳米管的生长，结果表明碳纳米管的生长随着负衬底偏压的增大先增强，然后减弱，并且出现了部分准直的碳纳米管，分析和讨论了负衬底偏压对碳纳米管生长的影响。     

Effects of hydrogen on the formation of aligned carbon nanotubes by chemical vapor deposition

Well-aligned carbon nanotubes with controllable properties were grown on porous silicon substrates by thermal chemical vapor deposition. The morphologies of the carbon nanotubes were varied with the introduction of H2 during the catalyst activation and/or carbon nanotube growth processes. It was found that H2 promotes the growth of carbon nanotubes while preventing the formation of spherical amorphous carbon particles. Without the introduction of H2 during the C2H2 thermal decomposition, aligned carbon nanotubes mixed with spherical carbon particles were formed on the substrate. However, with the introduction of H2, pure carbon nanotubes were synthesized. These nanotubes also had uniform diameters of 10-20 nm, which is much smaller than nanotubes synthesized without H2. The average growth rate of nanotubes was also affected by the introduction of hydrogen into the reaction chamber during nanotube growth. With the addition of hydrogen, the average growth rate changed from 78 nm/s to 145 nm/s. A possible growth mechanism, including the effect of a high ratio of H2 to C2H2, is suggested for the growth of these well-aligned carbon nanotubes with uniform diameters.     

Influence of NH<Subscript>3</Subscript> atmosphere on the growth and structures of carbon nanotubes synthesized by the arc-discharge method

Using the improved arc-discharge equipment, we selected graphite as electrode and prepared the multi-walled carbon nanotubes in an atmosphere of pure NH₃ at pressure of 0.02 MPa and discharge current of 70 A by the arc-discharge method. The influence of NH₃ atmosphere on the growth and structure of carbon nanotubes was studied. By analyzing transmission electron microscope and scanning electron microscope micrographs, we found that a large quantity of multi-wall carbon nanotubes can be grown on the top surface and in the inner of interlayer between central part and outer part in the cathode deposits. The results show that there is no significant difference of the shapes and the structures between NH₃ atmosphere and other atmosphere such as He, H₂, et al., except their positions. This study demonstrates that the arc-discharge method in NH₃ atmosphere is one highly efficient method in the preparation of carbon nanotubes.