共查询到19条相似文献,搜索用时 411 毫秒
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脉冲激光沉积类金刚石膜技术 总被引:2,自引:0,他引:2
脉冲激光沉积(PLD)技术制备类金刚石(DLC)薄膜存在着金刚石相含量较低、石墨颗粒多、薄膜与衬底附着力差、膜内应力大等技术难题,为此,研究人员研究出了多种技术措施,如通过引入背景气体、超快激光、偏压、磁场以及加热等措施提高了薄膜金刚石相含量;采用金刚石或丙酮靶材、减小单脉冲能量等措施减少了石墨颗粒;采用间歇沉积、真空退火、超快激光等措施减少了膜内应力;合理没计过渡层改善了膜与衬底间的附着力等.这些技术有力地推动了脉冲激光沉积技术的发展. 相似文献
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衬底温度对ZnO:Al薄膜结构和性能的影响 总被引:1,自引:0,他引:1
利用射频磁控溅射法采用氧化锌铝(98%ZnO+2%Al2O3)为靶材在普通载玻片上制备了ZAO(ZnO:al)薄膜,研究了衬底温度对薄膜晶体结构,电学和光学性能的影响.利用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析,利用分光光度计和电阻测试仪分别测试了薄膜的光电学性能.结果表明,衬底温度对薄膜结构及光电学性能影响最大.溅射功率120 W、衬底温度300℃、工作气压0.6 Pa制得的薄膜具有良好的光电学性能(可见光平均透过率为79.49%(考虑衬底的影响,电阻率为4.99×10-2 Ω·cm). 相似文献
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透明导电薄膜ZnO∶Zr的制备及特性研究 总被引:1,自引:0,他引:1
利用直流磁控溅射法在玻璃衬底上制备出了可见光透过率高、电阻率低的ZnO∶Zr(ZZO)透明导电薄膜.讨论了溅射功率对ZZO薄膜结构、形貌及光电性能的影响.研究结果表明,溅射功率对ZZO薄膜的结构和电学性能有很大影响.实验制备的ZZO薄膜为六角纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向.在溅射功率为115 W时,ZZO薄膜的电阻率具有最小值1.9×10-3 Ω*cm,其霍尔迁移率和载流子浓度分别为18.7 cm2*V-1*s-1和2.07×1020 cm-3.所制备ZZO薄膜样品具有良好的附着性能,其可见光区平均透过率均超过92%. 相似文献
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研制成功一种新型的陶瓷电路基板的金属化技术,它兼容了薄膜和厚膜技术的优点,采用SEM研究了陶瓷基体的浸蚀特性。测量了金属化导体的附着强度、可焊性、薄层电阻、导热能力及微波损耗,并进行了温循和老化等可靠性试验。测试及应用结果表明,采用该技术可在氧化铝瓷基板上制作附着牢固的铜金属化电路图形,其机、电、热性能优良,可靠性好,为微波和混合集成电路衬底金属化技术开辟了新的工艺途径。 相似文献
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采用RF磁控溅射法在玻璃衬底上原位低温生长ZnO薄膜.生长出的薄膜对可见光具有高于90%的透射率,该薄膜具有良好的C轴取向.利用X射线衍射(XRD)的测试结果,分析了溅射工艺条件如衬底温度、氩氧比和溅射气压等对薄膜性能的影响,得到最佳的生长工艺条件为:衬底温度300 ℃,溅射气压1 Pa,氩氧比为25 sccm∶15 sccm.在此条件下生长的ZnO薄膜具有良好的C轴择优取向,并且薄膜的结晶性能良好.采用这种方法制备的ZnO薄膜适合用于制备平板显示器的透明薄膜晶体管和太阳电池的透明导电电极. 相似文献
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CVD ZnS 是中长波前视红外窗口和整流罩的合适材料,文中从折射率、热应力、透射波段和附着力等方面考虑,由实验设计出HfO2/ 非晶膜双层结构作为ZnS与金刚石保护膜间的过渡层,采用射频反应磁控溅射技术在ZnS表面制备过渡膜层,并采用划痕法研究了薄膜的显微结构对其与衬底间附着力的影响。结果表明,金刚石能够在HfO2/ 非晶膜过渡层上形核、生长,得到优质的保护膜,同时过渡层也缓解了金刚石膜与ZnS衬底间由于热膨胀系数的较大差异而引起的膜层脱落问题,单面沉积过渡层的ZnS在2~12 μm范围具有增透膜的作用。与AlN/非晶膜组成的过渡层相比,HfO2/非晶膜组成的过渡层具有更小的残余应力。在典型实验条件下,该过渡层与ZnS衬底附着性良好,研究发现薄膜的显微结构对附着力的大小有重要影响,形成细小致密的柱状纤维结构,有利于提高附着力。 相似文献
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针对液晶聚合物(LCP)柔性基板高频电子封装应用需求,采用一种薄膜溅射工艺直接在LCP柔性基板上制作TaN薄膜电阻,研究不同等离子体预处理方式对LCP表面形貌和LCP表面薄膜金属膜层附着强度的影响,进一步研究溅射气压和氮气体积分数等参数对电阻性能的影响,考察LCP柔性基板上的TaN薄膜电阻精度及电阻温度系数(TCR),并制备出50Ω的薄膜电阻。结果表明:当射频功率为300 W的氧等离子体预处理600 s时,LCP表面的面粗糙度低,LCP基板表面薄膜金属膜层附着强度高,其值>5.0 N/mm2;当溅射功率为400 W、氮气体积分数为3%、溅射气压为0.2 Pa时,制备的TaN薄膜电阻的阻值精度高,阻值精度≤±4%,TCR电阻稳定性能好。 相似文献
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《Microelectronics Reliability》2015,55(5):838-845
We report on a systematic study of the electromechanical properties of flexible copper (Cu) thin film for flexible electronics. Cu ink is synthesized with chemical reduction process. Cu ink film spin-coated on a polyimide substrate is annealed with white flash light, also known as intense pulsed light (IPL), which guarantees a room temperature and sub-second process in ambient conditions. IPL annealed Cu film shows the electrical resistivity of 4.8 μΩ cm and thickness of 200 nm. The electromechanical properties of IPL annealed Cu film are investigated via outer/inner bending, stretching, and adhesion tests, and it is compared with conventional electron-beam evaporated Cu film. IPL annealed Cu film shows a constant electrical resistance within a bending radius of 6 mm. The bending fatigue test shows that the Cu film can withstand 10,000 bending cycles. In the stretching test, the Cu film shows a 50% increase in resistance when a strain of 2.4% was induced. At 4% strain, the resistance increases more than 200%. Meanwhile, the electron-beam evaporated film shows a constant resistance up to a strain of 4%. Lower stretchability of IPL annealed Cu film is attributed to its inherent cracks and porous film morphologies. IPL annealing induces the local melting at the interface between the substrate and Cu film, which increases the adhesion strength of the Cu film. These results provide useful information regarding the mechanical flexibility and durability of the nanoparticle films for the development of flexible electronics. 相似文献
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CdZnTe晶片是HgCdTe外延薄膜的理想衬底。为了优化CdZnTe衬底的电学接触性能,作者基于真空蒸发法和磁控溅射法分别在p型导电性CdZnTe晶片(111)B (富碲面)制备Au/Cd复合电极。通过接触粘附试验,研究了复合电极的制备方法对电极与衬底之间的粘附性;利用卢瑟福背散射光谱法(RBS)比较了不同沉积方法下样品的元素深度分布;采用电流-电压(I-V)测试比较了两种制备工艺对Au/Cd复合电极与CdZnTe衬底欧姆接触特性的影响,从而确定了最佳复合电极的制备工艺。 相似文献
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Good adhesion strength of thin film stack is desirable for the integrated circuits (IC) manufacturing stage such as chemical mechanical planarisation (CMP). The scratch test and four-point bending test are two most commonly used methods to find the adhesion properties of thin film because of their simplicity and quantifiability. In this research, scratch test is used to find the practical adhesion energy (Wpa) of thin film stack and four-point bending test is used to find the critical strain energy release rate (Gc). The comparison of Wpa from scratch test and Gc from four-point bend test reveals that, for the same thin film stack, Wpa value is comparatively higher than Gc. The scratch test is semi-quantitative, in that the normal load at which a predefined failure event or delamination occurs is defined as a measure of adhesion. However, the four-point bending test is more quantitative in finding the adhesion properties. Thus, for practical application, such as CMP process, the Gc measurements from four-point bending test are recommended as references. 相似文献
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《Components and Packaging Technologies, IEEE Transactions on》2009,32(2):333-338
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Seong Won Kim Sangsik Park Siyoung Lee Daegun Kim Giwon Lee Jonghyun Son Kilwon Cho 《Advanced functional materials》2021,31(25):2010870
Recently, many researchers have tried to develop stretchable semiconducting thin films that can maintain their electrical performance under stretching. However, the fabrication processes have not been sufficiently practical and feasible to be used for soft electronics. Here, a stretchable high-performance organic semiconducting thin film is fabricated by exploiting simultaneous patterning and pinning of a polymer semiconductor solution on an elastomeric substrate in which creasing-instability has occurred. As a result, a mesh-like polymer semiconducting thin film having vacant regions in the crease centers and surrounding crystalline regions near them can be fabricated. Due to the mesh-like morphology and the percolated crystalline regions, the polymer semiconducting thin film shows superior stretchability and charge-transport performance compared to the reference flat polymer thin film. When incorporated into organic thin-film transistors, the DPP-DTT polymer semiconducting thin film maintains its high field-effect carrier mobility (0.53 ± 0.03 cm2 (V s)−1) under a strain ε of 80% and is highly stable under repeated stretching cycles at an ε of 50%. 相似文献
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Myung Jin Yim Jin-Sang Hwang Jin Gu Kim Jin Yong Ahn Hyung Joon Kim Woonseong Kwon Kyung-Wook Paik 《Journal of Electronic Materials》2004,33(1):76-82
Anisotropic conductive film (ACF) has been used as interconnect material for flat-panel display module packages, such as liquid
crystal displays (LCDs) in the technologies of tape automated bonding (TAB), chip-on-glass (COG), chip-on-film (COF), and
chip-on-board (COB). Among them, COF is a relatively new technology after TAB and COG bonding, and its requirement for ACF
becomes more stringent because of the need of high adhesion and fine-pitch interconnection. To meet these demands, strong
interfacial adhesion between the ACF, substrate, and chip is a major issue. We have developed a multilayered ACF that has
functional layers on both sides of a conventional ACF layer to improve the wetting properties of the resin on two-layer flex
for better interface adhesion and to control the flow of conductive particles during thermocompression bonding and the resulting
reliability of the interconnection using ACF. To investigate the enhancement of electrical properties and reliability of multilayered
ACF in COF assemblies, we evaluated the performance in contact resistance and adhesion strength of a multilayered ACF and
single-layered ACF under various environmental tests, such as a thermal cycling test (−55°C/+160°C, 1,000 cycles), a high-temperature
humidity test (85°C/85% RH, 1,000 h), and a high-temperature storage test (150°C, 1,000 h). The contact resistance of the
multilayered ACF joint was in an acceptable range of around a 10% increase of the initial value during the 85°C/85% RH test
compared with the single-layered ACF because of the stronger moisture resistance of the multilayered ACF and flex substrate.
The multilayered ACF has better adhesion properties compared with the conventional single-layered ACF during the 85°C/85%
RH test because of the enhancement of the wetting to the surface of the polymide (PI) flex substrate with an adhesion-promoting
nonconductive film (NCF) layer of multilayered ACF. The new ACF of the multilayered structure was successfully demonstrated
in a fine-pitch COF module with a two-layer flex substrate. 相似文献