基于Matlab流水线A/D转换器行为级模型建模与仿真

为了研究流水线A／D转换器的结构与性能。提出了一种完全采用Matlab对流水线A／D转换器进行行为级建模和仿真的方法．在充分掌握流水线A／D转换器整体结构基础上，对其基本模块进行数学建模，并考虑误差失调等因素的影响．最后通过搭建测试平台,对一个8bit的流水线A／D转换器进行仿真，给出理想电路的性能指标和实际电路存在失调误差时的性能指标．     

实用D／A转换

D／A转换通常是用独立专用芯片实现的,本文介绍了一种新的8位D／A实现方式,给出了实验电路、测试程序及实验结果,同时提出了利用单片机、运放实现10位D／A转换的方法。在单片机应用领域,利用这种方式实现D／A,不但降低芯片成本同时可减小PCB尺寸,有着非常高的应用价值和推广价值。     

一种用于10位100 MSPS流水线A/D转换器的CMOS线性采样开关

分析了影响CMOS模拟开关性能的主要因素，针对10位100 MHz采样频率A／D转换器对输入信号动态特性的要求，设计了一种适合在3．3V电源电压下工作的CMOS全差分自举开关采样电路。基于0．35μm标准CMOS数模混合工艺，在Cadence环境下采用Hspice对电路进行了模拟。模拟结果显示，其无杂散动态范围达到95 dB，满足了A／D转换器采样保持电路对输入信号高动态范围的要求，也保证了电路的可靠性。     

D／A转换器非线性误差的一种自动修正方法

本文简要地讨论了D／A转换器的误差，利用线性回归的方法对D／A转换器的非线性误差进行直线拟合，然后对回归系数采用硬件进行修正，以使D／A转换器的误差达到最小值。     

A/D转换器非线性特性简易测试方法

A／D转换器非线性测试是A／D转换器静态特性测试的一项重要内容。相对于以往成本较高的测试方法，文章提出了一种简易可行的测试方法：利用高精度D／A转换器和低精度A／D转换器的精度差，借助8051仿真系统进行测试。实验表明，该方法成本低廉，操作简单，适用于A／D转换器非线性特性的初期评测。     

全差分结构流水线A/D转换器的研究与仿真

为了研究流水线A／D转换器结构和进一步提高转换器的性能，本文A／D转换器采用全差分结构形式，并利用Pspiee对全差分结构流水线A／D转换器基本模块进行了行为建模和仿真。为了验证行为模型的正确性。利用这些基本模型设计了一个1．5位，级10位流水线A／D转换器系统，并进行了仿真，最后给出了模拟结果。     

基于Hsp ice 的流水线AöD 转换器的行为仿真研究

为了研究流水线A／D转换器的结构与性能，本文提出用Hspice对流水线模数(A／D)转换器进行行为建模和仿真的方法。本文在对流水线A／D转换器结构分析的基础上，确定了基本模块，并用Hspice对基本模块的行为模型进行了描述。为了验证这些行为模型，设计了一个12位流水线A／D转换器，并进行了仿真，最后给出了模拟结果。     

Δ-∑A／D转换器中数字下变频解调器的设计与实现

从集成电路设计技术的角度，介绍了Δ-∑A／D转换器中数字下变频解调器的原理和集成实现方法。釆用CSD码，用CIC滤波器、半带滤波器，实现了16位Δ-∑A／D转换器中的抽取器。对所设计的HDL代码进行了综合及仿真。结果表明，设计达到了精度要求，且具有速度快、面积小的特点。     

基于TMS320F206立体声数字测试仪的设计

研究了用DSP技术实现导频制立体声测试系统，提出了一种使用低档DSP芯片TMS3205206和高速A／D芯片MAX121，实现高精度立体声解码的方案。具有实现简单、抗干扰能力强、性能指标高、与数字显示电路接口设计方便等优点，达到了较高的性能／价格比。     

光刻

２００２０３０１８１曝光装置用G２０K型KrF准分子激光器＝露光装置用KrFエキシマレ－ザ“G２０K”犤日犦／中尾清春∥光アライアンス．—２０００，１１（１）．－３７～３８２００２０３０１８２新的真空紫外光源＝新しい真空紫外光源犤日犦／佐佐木亘∥光アライアンス．—２０００，１２（７）．－３６～３９２００２０３０１８３下一代器件和１５７nm的曝光方法＝次次世代のデバイスと１５７nmの露光方法犤日犦／子腾氏∥光技术コンタクト．—２０００，３８（６）．－３６～３７２００２０３０１８４剖析半导体制造用的光刻装置＝…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.