超连续谱光源对CMOS图像传感器的干扰实验研究

首先介绍了CMOS图像传感器工作的基本原理。以自研的超连续谱光源为干扰源搭建了实验装置,对CMOS器件在强光下的受干扰现象进行了实验研究。获得了不同功率密度水平下CMOS器件输出的光斑饱和图像。以入射到CMOS器件靶面的功率密度3.14×10-3W/cm2为例,对得到的图像数据进行了分析,得到了干扰效果图和像元灰度表,并对产生的原因作出了分析。     

短沟道铝栅CMOS器件及工艺研究

利用计算机模拟软件Tsuprem4、Medici以及流片实验开发了短沟道铝栅CM0S器件及其工艺流程.对铝栅1.5μm短沟道CMOS工艺进行器件结构、工艺和电气性能等参数的进行了大量的模拟和流片实验,最后在提出的工艺平台上成功流水了1.5μm铝栅CMOS流片测试的阈值电压为士O.6V,击穿达到11V,各项指标参数的模拟与实际测试误差在5%以内,器件的各项指标达到了量产的要求.     

0．8μm SOI CMOS技术及电路研制

SOI CMOS技术在一些特殊应用领域中有着体硅无法比拟的优势文中叙述采用SIMOX材料和0.8μm SOI CMOS工艺加固技术成功研制出抗辐射性能较好的器件和电路,并且给出了SOI CMOS器件的特性随辐照总剂量的变化关系,试验电路通过了总剂量500 Krad(Si)钴60γ射线辐照实验。     

尺寸可变的65nm多叉指射频CMOS器件模型提取与优化

通过对CMOS PSP直流核心模型进行STI参数的修正、探针电阻的引入和提取以及尺寸可变的源漏寄生电阻表达式的引入,呈现了一个尺寸可变的65 nm多叉指射频CMOS器件模型及其提取和优化方法.与实验数据比较结果表明,该模型及其提取和优化方法能够在14 GHz以内精确地预测器件性能.     

CMOS工艺中横向双极型晶体管的直流与交流电学特性

在 CMOS工艺结构中,将位于阱中的 MOS 器件加适当的偏置,可以使其变为体内器件、以横向双极管的模式工作.本文利用 3μm P-well和 2μm N-well两种 CMOS工艺设计了这种横向双极器件,分析讨论了这种器件的工作原理和特点,并给出其典型的直流和交流参数的实验数据.这些分析和实验数据将有助于电路设计者了解和掌握该器件的电流、频率工作范围及特性,以便在CMOS电路中充分发挥其特长.     

基于CMOS成像器件的手指静脉图像采集方法及装置

通过对CMOS成像器件的应用特性和控制方法的研究,提出了一整套基于CMOS成像器件的手指静脉图像采集方法及装置,包括光源、成像器件、控制电路和装置结构.采用美国OV公司的OV7411P作为CMOS成像器件,并通过I2C总线方式控制CMOS成像器件的参数;光源采用LED近红外发光管,其光源亮度调节采用恒压调节方式,并由中央控制器通过I2C总线发出指令.实验结果表明,采用该方法成像速度快、质量高、控制灵活、成本低,是一个可行的手指静脉图像采集方案.     

重掺多晶氧化法LDD-CMOS高性能电路的优化设计与研制

对重掺多晶氧化法(HDPO)应用于LDD IC中的工艺条件进行了优化,并实现了HDPO-LDD电路.研究了HDPO-LDD器件的性能和热载流子效应,同时对器件进行计算机模拟,对HDPO-LDD进行优化设计,获得了优化参数.综合优化设计的工艺条件和参数,成功地应用于亚微米NMOSFET,1μm沟道长的CMOS CD4007电路,2μm沟道长的CMOS 21级环振和2.5μm沟道长的LSI CMOS IC,性能优良,高速,稳定,可靠.     

体硅CMOS FinFET结构与特性研究

建立在SOI衬底上的 FinFET结构被认为是最具全面优势的非常规MOS器件结构.本文通过合理的设计将FinFET结构迁移到普通体硅衬底上,利用平面凹槽器件的特性解决了非绝缘衬底对器件短沟道效应的影响,同时获得了一些标准集成电路工艺上的改进空间.运用标准CMOS工艺实际制作的体硅CMOS FinFET器件获得了较好的性能结果并成功地集成到CMOS反相器和环形振荡器中.结构分析与实验结果证明了体硅CMOS FinFET在未来电路中的应用前景.     

高可靠器件电参数测试覆盖性研究

高可靠器件广泛应用于航空、航天等军用领域,由于使用环境恶劣,性能和可靠性要求更高。但由于器件规定的项目（参数）往往不全,测试条件不能覆盖全部使用状态,经常引起整机质量问题。本文从测试项目、测试条件和测试方法3个方面,以实例分析了高可靠半导体器件电参数测试存在的问题,研究了提高测试覆盖性的方法。采用CMOS静态功耗电流（...     

不同结构nMOS管的总剂量辐射效应

X射线直接成像的CMOS图像传感器由于工作在X射线辐射下,其内部器件会因为辐射效应引起性能恶化,因此需要对器件进行抗辐射加固并研究辐射对器件参数的影响。辐射导致的氧化物陷阱电荷及界面陷阱电荷受到栅氧厚度、偏置电压大小、辐射总剂量以及剂量率等多种因素影响。设计了n型场效应晶体管辐射加固结构版图,用0.5μm CMOS工艺流片,并进行了30 kGy(Si)的总剂量辐照效应实验。实验结果显示,所设计的n型场效应晶体管在辐射之后漏电流有所增加、跨导减小、阈值电压向负向漂移;辐射加固晶体管在漏电流性能上较未加固晶体管更好,在跨导改变和阈值电压漂移上未能表现出其更优的性能。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.