基于Surfacelet变换的3D Context模型视频去噪新方法

 本文将3D Context模型应用于Surfacelet变换域,提出一种新的视频去噪方法.Surfacelet变换(ST)是一种新的3D变换,具有多方向分解、各向异性和低冗余度等性质.根据视频信号ST域内系数和噪声分布的特征,将2D Context模型拓展到3D,按照能量分布将ST系数分成多个子块,每个子块有独立的能量和阈值估计.实验结果表明,本文算法噪声抑制效果明显优于分层2D去噪声方法和其它现有的3D方法,去噪视频的PSNR值提高了约2dB.从视觉效果来看,本文算法在去除噪声的同时,能很好的保留视频图像细节,运动物体非常平滑,有效解决传统算法中存在的拖影、闪烁等问题,尤其适合于包含剧烈运动和丰富纹理图像的视频.     

一种基于mean shift的Contourlet域SAR图像去噪方法

Contourlet变换是小波变换的新发展,具有良好的多尺度和多方向性。合成孔径雷达(SAR)图像Contourlet阈值去噪不考虑相邻像素在变换域的联系,将低于阈值的变换系数置零,会丢失图像中的细节信息。针对上述问题,文中提出一种新的去噪算法:首先,将SAR图像进行Contourlet分解;然后,利用具有良好间断点保留能力的mean shift算法处理子带系数。实验结果证实该算法能够在有效抑制相干斑噪声的同时,较好地保留图像中的细节信息。     

基于多尺度阈值技术的小波去噪

多尺度阈值技术的小波去噪是根据小波变换下信号和噪声在多尺度空间中的不同特性,用软阈值函数确定的阈值对不同尺度上的小波系数进行处理,进而达到去除噪声的目的。运用这种方法对信号进行处理时去噪效果良好,并且能够很好地保留原信号的细节信息。     

基于自适应阈值函数的小波阈值去噪方法

去噪是小波分析的一个重要应用领域,相对于其它方法,小波变换具有对信号时频局部性详细刻画的优势。在信号的去噪处理过程中,如何在削弱噪声的同时又最大限度的保留信号的奇异性特征是信号去噪研究的一个核心问题。该文提出一种基于自适应阈值函数的小波去噪方法,通过调整阈值函数实现在信号小波分解的细尺度上去除噪声的同时又尽量保留信号细节系数,而在宽尺度上最大限度地滤除噪声部分的小波系数。通过对blocks, bumps和水下目标回波信号的仿真实验证明,该方法和现有的阈值去噪方法相比,具有显著的优势,能够在滤除噪声的同时很好地保留信号的奇异性特征。     

改进阈值的窗口傅里叶变换滤波

固定阈值算法对由噪声引起的小的频谱系数进行归零,可以取得较好的去噪效果。但由于其阈值函数不连续,在阈值附近具有突变,所以会对一些大的噪声频谱系数有所保留,对小的信息频谱系数造成丢失。为了改善窗口傅里叶变换滤波算法中的阈值选取方法,提出了自适应阈值方法。通过模拟散斑干涉相位图验证可知,所提出的自适应阈值方法可以对噪声进行有效的滤除,同时对信号信息进行很好的保留。     

一种自适应多尺度积阈值的图像去噪算法

该文提出了平稳小波变换(Stationary Wavelet Transform, SWT )域自适应多尺度积阈值的图像去噪算法(SWT domain Multiscale Products, SWTMP)。与传统的阈值去噪算法不同,该阈值不是直接作用于小波系数,而是作用于小波系数的空间多尺度积。分析了SWT域含噪图像多尺度积的特点,提出了SWT域自适应多尺度积阈值的计算方法。多尺度积强化了图像的重要结构信息,弱化了噪声,在有效去噪的同时更多地保留了图像的边缘和细节。实验结果表明,所提算法对自然图像去噪后的视觉效果和性能指标均好于二进小波域多尺度积阈值(Adaptive Multiscale Products Thresholding, AMPT)去噪方法。     

一种改进的自适应图像去噪算法实现

数字图像在形成、传输和处理过程中,往往不可避免的存在噪声污染。因此去噪是数字图像处理的重点也是难点,需要提出一种更加行之有效的去噪算法。针对于传统软硬阈值的缺陷,本文提出一种将改进的的小波阈值去噪法与自适应中值滤波相结合的新的去噪方法。小波阈值去噪即确定一个合适的阈值,对分解的小波系数进行阈值化处理,滤除噪声的小波系数,而保留信号的小波系数。该算法相对于传统软硬阈值的峰值信噪比(PSNR)的提高百分比分别达到了16.32%和8.95%,去噪效果非常理想。该方法较之以往的去噪方法,峰值信噪比有了明显的提高,同时能够有效保留边缘及细节特征。     

基于轮廓变换的自适应阈值图像去噪算法

针对Contourlet变换子带系数相关的特性,对图像去噪的阈值进行了研究,提出了一种新的自适应阈值图像去噪算法。该方法首先对噪声图像进行Contourlet变换,得到不同尺度、不同方向上的子带系数,再根据子带系数的能量关系采用改进的Bayes Shrink自适应阈值对图像进行去噪处理。实验结果表明:这种方法提高了图像的PSNR值,增强了去噪后图像的视觉效果,而且更好地保留了图像的边缘信息。     

基于小波分析的心电信号去噪算法研究

心电信号在临床诊断上有非常重要的作用,但由于容易受到噪声干扰,采集的心电信号中通常包含很强噪声,为了有效去除噪声干扰,该文提出了一种基于自适应阈值的小波模极大值算法来进行信号去噪.关键点是在每个分解尺度上自适应的选取合适的阈值,用来对小波变换系数的模极大值点进行筛选,以去除噪声极值点.该文采用MIT/BIH数据库中的数据对算法进行仿真验证,结果表明该算法有更好的去噪效果,同时心电信号能被很好的保留.     

基于双域滤波的三维块匹配视频去噪算法

将双域滤波和三维块匹配算法相结合,充分利用了视频序列的时空频域的相关性,进行视频去噪。将三维块匹配视频去噪算法中小波阈值去噪得到的图像替换原引导图像,抑制了双域滤波算法基本层不平滑的问题。参考残差矩阵的能量谱对短时傅里叶变换系数进行阈值收缩,减少细节层的噪声残留。实验结果表明,本算法有效地解决了双域滤波算法的基本层不平滑、细节层有噪声残留的问题,主观和客观对比也表明,本算法有着较为优秀的去噪效果。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.