通信用磷酸铁锂电池组第1部分：集成式电池组通信用磷酸铁锂电池组第1部分：集成式电池组（二）

5．7．16绝缘电阻 对于金属外壳的电池组，电池组正负极接口分别对电池组金属外壳的绝缘电阻不小于2MΩ注：绝缘要求不适用于塑料外壳和保护盖的电池组。     

微波器件金属陶瓷外壳电性能设计及实践(续)--微波器件封装之一

（上接第2002.11期54页）3实践微波器件外壳电性能设计目标，就是如何降低外壳的电容、电感和电阻，控制特性阻抗，以满足器件要求。但是这些参数往往是相互制约的，如电容和电感、电阻和电容，反馈电容和输入、输出电容等等。因此需要折衷考虑，最终对各参数进行优化。另一方面，由于我们多年来已经成功开发了上百种微波器件外壳，积累了相当多的经验和模式，借鉴这些经验和模式，应用于外壳设计中，无疑是一个捷径。以下是几种行之有效的改善外壳电性能的结构和模式。瓷件外形尺寸/mm13×11×2.37×输入输出电容/pF0.80.71工作频率/GHz3…     

农网配电变压器雷电防护措施研究

针对农网配电变压器存在雷击损坏隐患,现有规程规定的防护措施并不能完全保护变压器,有必要研究提出强化防护措施并研究措施的防护效果。针对变压器低压绕组首端对外壳绝缘及高压绕组中性点对外壳绝缘这两个绝缘薄弱点及接地电阻阻值影响过电压的问题,经研究,提出三种防护措施:(1)加装避雷器;(2)加装电感线圈;(3)降低接地电阻。     

0.5mm节距数模混合陶瓷封装外壳加工工艺研究

采用多层高温共烧陶瓷工艺制作了外形尺寸为21.0mm×8.8mm×2.0mm、引线节距为0.5mm的数模混合集成电路封装外壳,研究了加工工艺对外壳性能的影响。结果表明,采用稳定生瓷片尺寸、精密制版、提高钨金属化浆料流变性、优化印刷参数设置等能够使外壳微波传输线的连续性得到改善。     

642型晶体管兆欧表

642型晶体管兆欧表是上海冰箱修配厂1965年试制成功的新产品,其主要技术性能如下:1.兆欧测量:0～500兆欧,最小分度0.1兆欧,±1%(T-1型);0～1000兆欧,最小分度0.2兆欧,±1%(T-2型).2.电压测量:0～500伏直流,±1%,每伏1000欧.3.阻尼时间:不超过3秒钟.4.绝缘电阻:在温度20±5℃和相对湿度低于85%时,电路与外壳的绝缘电阻不小于20兆欧.5.     

基于51单片机的手持绝缘电阻测试仪的设计

本文提出了一种基于51单片机绝缘电阻综合参数测试仪的设计方案.采用C8051为控制芯片,结合双积分检测电压的方法法,实现了对绝缘电阻的自动测量,测试数据可实时记录并通过LCD显示.通过该系统的开发,可以更大程度的提高绝缘电阻测量的自动化水平及测试范围.1.系统概述本文提出了基于C8051单片机的数字式绝缘电阻测试仪的设...     

国产电阻阵列技术的发展趋势

回顾和总结了国产电阻阵列3个发展阶段的主要技术方案、优缺点和最终结果.第一代64×64电阻阵列采用了体材料微机械加工的单晶硅薄膜微型电阻,成品率较高但与CMOS工艺不兼容、均匀性差、功耗大、占空比极低、规模小;第二代128×128和256×256电阻阵列采用了体材料微机械加工的复合薄膜微型电阻,基本解决了工艺兼容性、均...     

日立制作所采用新结构的TFT使10英寸TFT-LCD成品率提高

日立制作所采用新结构的 TFT,从而改善了大型 TGT-LCD 的批量生产技术。栅极绝缘膜采用 Al_2O_3/SiN 双层结构,降低了绝缘膜缺陷的发生率。另外,TFT 的栅极和栅极配线材料采用 Al 以取代过去的 Cr,使电阻率降低一个数量级,因而栅极配线可做到单层化,配线电阻从原来的7kΩ降至2kΩ,使 LCD 的性能大幅度改善。     

多层陶瓷外壳的失效分析和可靠性设计

文章对多层陶瓷外壳的失效模式,包括陶瓷底座断裂失效、绝缘电阻失效、断路和短路失效、外引线和无引线外壳引出端焊盘与外电路连接失效、电镀层锈蚀失效、密封失效、键合和芯片剪切失效和使用不当造成失效等进行讨论,并对这些失效的失效机理进行了分析,根据以上的失效模式及其失效机理分析,对多层陶瓷外壳的可靠性设计进行了探讨。     

某大型测量设备通路及绝缘电阻测试系统

某大型测量设备的通路及绝缘电阻检查是手动测试完成的,测试时间长,本文为此开展了通路及绝缘电阻测试系统研制.本文的研究适应于某大型测量设备通路及绝缘电阻检查的测试方法,采用高精度激励源设计、隔离放大、信号调理、高精度测量等技术,实现了低电压激励条件下的绝缘电阻测试.大幅提高了测试速度,缩短了测试时间,杜绝了人为操作误差.设计了独特的递推比对测试算法,自动适应被测对象的阻抗特性,保证测试精度.设计了完善的自检功能,确保测试系统自身绝缘和精度合格,测试结果准确可信.该测试系统具有96路独立接点的测试通道,能自动完成对被测装置通路及绝缘电阻的测试与判别,实现测试数据的显示与自动存储.经过改进信号转接装置可以实现其它设备的通路及绝缘电阻测试.本文介绍了该测试系统的结构、软硬件组成及工作原理,详细阐述了技术方案和关键技术,总结了创新成果.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.