基于C6455 DSP的消像旋实时图像处理系统设计

针对通用计算机消像旋处理实时性差和性价比低的特点,提出了采用C6455 DSP芯片为核心处理器,研究设计了基于C6455 DSP的消像旋实时图像处理系统,实现了图像数据的采集、消像旋处理、输出等一系列功能。结果表明,该系统实时性好,图像显示效果良好,并已成功应用于某光电系统的消像旋处理中。     

反射式探测系统中数字消像旋的简易方法

当探测器置于旋转平台下方时,由于平台的旋转,在探测器像面上接收到的像将按一定规律作旋转运动.根据系统基本结构,分析了成像系统的光学传输成像模型,提出了数字消像旋的简易方法,对图像处理系统的实际输出结果进行处理,而不需要采用光学消像旋和电子图像消像旋等方法,提高了系统探测处理的实时性,降低了系统设计的难度,具有较强的实用性.     

高速超分辨率图像处理系统

为了对遥感图像进行实时脱机的超分辨率增强处理,设计了一种基于现场可编程逻辑门阵列(FPGA)和数字信号处理器(DSP)的超分辨率图像处理系统,系统在视频预处理部分利用FPGA来实现对视频的降采样处理,在超分辨率处理部分分别用FPGA和DSP来完成对视频源的两种经典超分辨率算法的硬件实现.达到了对视频图像进行高速实时超分辨率处理的目的.     

基于FPGA和DSP的图像消旋系统的优化设计

给出了一种FPGA和DSP为主架构的实时视频图像处理平台。其中,以EP20K600EBC652-2X为核心处理器完成了实时图像消旋系统设计。提出一种有效的实时消旋算法。该平台利用旋转算法将原图像反向旋转相应的角度,它将抖动旋转的图像反向旋转相应角度,再用双线性插值方法进行重采样,达到了实时稳像的良好效果。阐述了这一图像消旋的算法原理及其优化设计,介绍了DSP以及FPGA的相关软硬件设计技术。     

基于SDRAM的Bayer格式图像插值算法硬件设计

针对传统的双线性Bayer格式图像彩色恢复算法效果不理想,提出了一种新算法,设计了一种将其用FPGA实现的硬件方案。改进算法应用梯度变化来增加通道间的相关性,提高线性插值的效果,根据探测器数据输出格式不满足Bayer插值算法要求,设计了一种基于SDRAM,运用乒乓操作和流水线等技术的硬件处理新机制。整个系统采用一片可编程门阵列(FPGA)作为硬件设计载体,使用Verilog-HDL硬件描述语言并采用自上而下的模块化设计对整个系统进行硬件描述。试验表明,算法在硬件上工作正常,实时输出的彩色图像在PSNR和目视方面均优于双线性插值算法。基本满足了系统在实时性和图像质量方面的要求。     

实时电子图像消旋系统

给出一种用数字图像处理方法实现的实时图像消旋系统的硬件结构及其与之相适应的快速算法，实验及实际应用结果表明，用这种方法实现的图像消旋系统不但能克服原有光学消像旋系统的不足，而且还具有体积小、成本低、可靠性高等优点．     

红外图像预处理设计及非均匀性算法应用

在红外图像信息处理中,首先要对采集到的图像信号进行预处理。以SOFRADIR公司的320×240元红外探测器芯片为例,介绍基于DSP处理器和FPGA的图像预处理系统的硬件设计,以及图像预处理非均匀性算法的研究。在图像预处理系统的硬件平台上,通过采用非均匀性算法中的两点校正法,对所采集到的红外图像信号进行预处理,取得了较好的效果,证明了硬件系统的合理性和算法设计的可行性。     

红外实时图像增强的硬件设计与实现

根据红外图像特点,提出了基于FPGA＋SRAM的硬件实时图像处理结构.该硬件设计包含4个主要模块：视频处理模块、FPGA模块、图像存储模块和DA转换及视频合成模块.FPGA是该系统的核心部分,能够实现2D-TDI、图像锐化和非均匀性校正等算法;SRAM阵列是暂存实时图像的,用于算法的实现;FPGA配置FLASH存放FPGA的配置程序;完成硬件调试工作后,尝试实现了部分图像增强算法.     

一种基于FPGA的图像观瞄系统消像旋设计

针对现代武器观瞄系统显示图像旋转干扰操作手瞄准的问题,提出了一种基于FPGA的消像旋设计方案。该方案根据从平台姿态传感器获得的旋转姿态信息,对显示图像进行反向旋转,从而消除显示图像的旋转,方便操作手瞄准。该方案同时扩展了无极变焦功能,解决了操杆与显示分辨力不一致的问题,提高了武器观瞄系统的瞄准精确度。     

一种红外图像伪彩色显示算法及其硬件设计

介绍了红外图像伪彩色显示的原理、编码算法和硬件组成。设计了三种由暗(黑)到明(白)的RGB映射函数与红外图像的温度由低到高相对应,实现了彩色层次分明,图像细节突出,更适合人眼观察的伪彩色图像显示。最后通过FPGA+TMS320C6416DSP+SAA7199B数字视频编码芯片,实现了实时可变的伪彩色变换算法和视频编码输出,验证了系统软硬件的有效性。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.