AI-SI法分析X波段机载雷达天线罩

采用口径积分-表面积分(AI-SI)算法,对带罩机载阵列天线进行了分析。雷达罩的介质反射是引起天线方向图副瓣抬升的主要原因,在传统的AI-SI法分析天线罩过程中没有考虑天线金属阵面对天线罩介质反射的影响,因此,带来较大的计算误差。为了避免上述问题,文中在分析带罩天线过程中,采用了理想源阵列加反射板模型。天线罩总的透射场为阵列天线的一次透射场与反射板产生的二次透射场的叠加。为验证算法的正确性,将AI-SI算法计算结果与CST软件仿真结果进行了比较,两者吻合较好。     

口径/谱域积分-表面积分法的研究

 通过分析口径积分、平面波谱理论关于天线近场计算的特点,获得一种混合的天线近场计算方法.结合表面积分技术,提出了口径/谱域积分-表面积分法,用于三维天线-罩系统电性能数值仿真.该方法吸取了口径积分和平面波谱理论的优点,对于天线近场的分析更为精确、实用.以弹载天线罩为仿真实例,结果表明,与口径积分-表面积分法和平面波谱-表面积分法相比,口径/谱域积分-表面积分法的计算结果与实验结果更为吻合,证明了该算法具有更高的精确度.     

GTD分析阵列天线在复杂电磁环境下的近场受扰

给出了应用几何绕射理论(GTD)分析计算机载电大尺寸阵列天线方向图的一种方法,比较好地解决了在复杂电磁环境下,大型阵列天线近场受扰分析的问题.该方法将阵列天线的每个阵元看成电偶极子,由于电偶极子尺寸很小,因而可以认为阵列的近场区仍然是单个电偶极子的远场区.根据这样的远场近似,可以利用几何绕射理论用解析方法计算每个电偶极子受到遮挡影响的场分布.通过独立地对阵列天线的每个阵元单独寻迹计算,并且将所有阵元的场进行叠加,就可以得到整个阵列天线受到处于近场的障碍物遮挡影响的场分布.应用此方法计算了一个阵列天线受到近场遮挡之后的方向图,并与应用HFSS仿真软件计算的结果进行了比较.计算结果表明,这一方法可以很好地应用于复杂电磁环境中大型阵列天线的近场受扰问题分析.     

大垂直口径天线俯仰波束赋形设计

给出了一种大垂直口径天线俯仰波束的优化设计过程。大垂直口径天线由10个辐射阵元构成,可以看成为一个阵列。为使天线的辐射波束达到给定的波束要求,提出了一种改进的遗传算法及其目标函数模型,对各辐射阵元的馈电幅度和相位同时进行优化。计算结果显示,天线能够产生满足设计要求的俯仰波束。通过全波电磁仿真软件HFSS进行了验证,仿真结果与计算结果吻合,证明了所提方法的有效性和实用性。     

球面近场下相控阵天线口径诊断研究

在近场测量系统中,天线口径诊断是其中一项重要功能,它能够帮助天线设计师发现相控阵天线设计或者网络配置问题.平面近场中的口径诊断技术已经广泛地应用在雷达天线测试中,在球面近场测量中同样需要这种算法.本文基于球面坐标系下电磁场模式方法,得到球面近场条件下的口径反演算法.在仿真模型中计算得到了被测天线的口径场分布,计算结果与理论模型结果吻合.对X波段阵列天线进行了实际测试,得到了不同配置下的阵列天线口径反演结果,经过数据比对,证明了本文算法的幅度反演精度优于1 dB.     

考虑互耦的阵列天线辐射近场近似计算方法

针对大规模阵列天线辐射近场电磁兼容性问题,基于有源单元方向图原理和子阵信息的综合方法计算了大规模阵列天线辐射近场场强的分布。该方法采用等效技术获取大规模阵列天线的端口特性,进一步结合天线单元的远场数据综合分析得到大规模阵列天线的近场分布;计算结果表明,在满足天线单元辐射远场条件下,该方法能够准确计算出大规模阵列天线的辐射近场分布。相较于全波分析,本方法在保证精度的同时,提高了计算效率,并且具有良好的灵活性。通过全波分析的数值算例验证了该方法的正确性。     

毫米波微带天线阵列设计

设计了一个圆口径串并联混合馈电的毫米波微带天线阵列。该天线采用矩形微带工字型缝隙贴片耦合馈电的方法展宽带宽。为了有效利用天线口径面积,减小网络复杂度,选取串联微带天线阵列形式。同时为了展宽带宽,根据设计的圆形口径阵列,将部分子阵采用串并联混合馈电的形式,得到带宽为5%的毫米波微带天线阵列。仿真表明,该天线在工作频带内增益大于30.6 d Bi,波束宽度为4.0°×3.5°,副瓣电平低于–13 d B。该天线阵面与网络配合,可以实现多波束或相控阵的功能。     

星载Ku波段波导缝隙天线的缝隙特性分析

在星载Ku波段谐振式波导缝隙阵列天线设计中,由于结构空间的限制,采用半高非标准波导。考虑到半高波导中更容易产生高次模影响的特点,以及设计成本和效率问题,将基于有限元法的高频电磁仿真软件Ansoft HFSS与Fortran编程相结合应用于该类天线的设计。采用HFSS研究并描述了宽边纵向辐射缝隙和中心倾斜耦合缝隙的特性,结合Elliott提出的经典平面缝隙阵设计理论,用Fortran编程设计了阵元数为80(8×10)的波导缝隙阵列天线实验件,并用HFSS仿真优化了天线阵整体的性能。对实物天线进行了近场测试,结果表明:天线的E面和H面副瓣电平分别是-29dB和-27.5dB,1.3以下驻波带宽为340MHz,与仿真结果基本吻合。良好的测试结果验证了用HFSS获取缝隙特性曲线的正确性及设计方法的有效性,为后期大型阵列设计提供了一种有效的方法。     

EBG结构在介质覆层波导缝隙相控阵中的应用

针对加载天线罩对于波导端头缝隙相控阵的天线性能和扫描盲点起到的恶化作用,提出了在阵面缝隙单元间加载EBG周期单元结构的方案,该方案结合了加载天线罩阵列缝隙之间的耦合特性以及EBG周期结构的抑制表面波特性,通过典型实例的数值仿真验证,消除了加载天线罩阵列的扫描盲点,展宽扫描范围,改善了天线阵的性能.     

一种Ka 波段对称四波束波导缝隙行波阵列天线的设计

本文给出了一种Ka 波段对称四波束波导缝隙行波阵列天线的设计方法。该设计对经典行波阵理论进行了改进 和创新,提出将驻波阵的电流幅度分布理论应用于行波阵,推导出多波束波导缝隙的电场分布方程,实现了波导缝 隙阵列天线对称四波束配置,并具备共口径、高增益、低副瓣等优点,满足多普勒测速雷达对天线的要求。HFSS 软件仿真测量结果验证了该设计的正确性。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.