高铬钢轧辊激光熔凝层组织及性能

利用扫描电镜(SEM)、透射电镜(TEM)和X射线衍射(XRD)等手段对高铬钢轧辊激光熔凝层的显微组织、相结构、回火稳定性及高温耐磨性能进行了分析.结果表明,高铬钢激光熔凝处理后剖面区由熔凝区、热影响区(HAZ)和基体组成.基体组织为回火马氏体和网状M7C3型碳化物,激光熔凝处理使基体中脆性碳化物完全溶解,表面熔凝区组织得到高度细化,呈现组织梯度,生成奥氏体和M23C6型碳化物,热影响区由隐晶马氏体、残余奥氏体和弥散的碳化物组成.激光熔凝区由于细晶强化、固溶强化和位错强化的共同作用,回火稳定性明显提高,560 ℃回火后出现二次硬化,峰值硬度达到672 HV.高温滑动磨损条件下激光熔凝层具有优良的耐磨性能.     

激光熔覆Ni-Cr-B-Si-C合金涂层显微组织的透射电镜研究

激光熔覆Ni-Cr-B-Si-C合金涂层组织由块状CrB型硼碳化物,树枝状Cr7C3型碳化物,胞枝状γ-Ni固溶体以及共晶产物组成。依局部成份条件,形成γ-Ni M23C6共晶和γ-Ni 镍硼化物共晶。熔覆过程的非平衡性质导致γ-Ni/Ni3B稳定凝固和γ-Ni/Ni2B亚稳定凝固并存。受快速凝固引起的热应力所致在Cr7C3和M23C6中发生高密度孪生。此外,涂层中存在非晶相,由非晶相包围的γ-Ni固溶体形成调制结构。     

热处理对激光立体成形DZ125高温合金组织的影响

研究了热处理对激光立体成形DZ125高温合金凝固微观组织的影响。结果表明,随着固溶处理温度的升高,初生γ′相的溶解增多,在1240℃固溶2 h后初生γ′相全部固溶;Ni_5Hf相和MC_((1))碳化物在高温保温时发生固态相变,经1180℃/2 h/空冷(AC)热处理后Ni_5Hf相全部分解,释放的Hf元素与基体固溶的C原子结合形成MC_((2))碳化物,部分MC_((1))碳化物在1000℃保温12 h后转变为M_(23)C_6或M_6C型碳化物;完全固溶处理后在1100℃和870℃时效时,γ′颗粒尺寸的变化规律及经验分布函数与Lifshitz-Slyozov-Wagner(LSW)理论预测的较为一致。拟合得到γ′相的粗化激活能为231.43 kJ/mol,γ′颗粒的粗化受Ti、Al原子在Ni中的扩散控制。     

铁基抗高温磨损激光熔覆涂层强韧设计和研究 Ⅱ:Fe-Cr-C-W-Ni激光熔覆层的微观组织及性能

利用ＯＭ、ＳＥＭ、ＴＥＭ研究了Ｆｅ－Ｃｒ－Ｃ－Ｗ－Ｎｉ激光熔覆涂层熔覆态及其高温时效态的微观组织结构。结果表明激光熔覆层组织细小,具有强韧两相组成（奥氏体和Ｍ_７Ｃ_３碳化物）的微观结构特征,高温时效处理组织中有Ｍ_（２３）Ｃ_６、Ｍ_６Ｃ、Ｍ_２Ｃ等新碳化物形成。显微硬度和冲击磨损实验证实了激光熔覆态和峰值时效态熔覆层均具有良好的力学性能。     

高钒高速钢中碳化钒的微细结构分析

利用扫描电镜、透射电镜和X射线能量分散谱仪对高钒高速钢中合金碳化物——碳化钒的精细结构及微区成分进行分析.结果发现：碳化钒中由于碳的有序缺位形成了V6C5简单六方超点阵结构;碳化钒内有大量纳米微粒子存在;微粒子处Cr、Mo和Fe元素含量较高,尤其是Mo元素,可高达20%（质量分数）以上.     

高Co—Ni合金等温回火析出的TEM研究

多年来对合金材料的不断研究,材料的强韧性得到不断提高。近十年中所开发的高Co-Ni合金是目前得到的高强度、高韧性和抗应力腐蚀等性能最佳配合的材料之一[1,2]。对这种具有高密度位错和二次析出相的马氏体合金钢,为控制多组分合金碳化物的析出,详尽研究各种碳化物的析出、长大、粗化和溶解,及其相关的影响因素是十分重要的。本文对一成分与AM100相近的高Co-Ni实验钢在不同回火温度下的沉淀析出行为进行研究,得到一些与AM100有关研究不近相同的结果。在标准的回火处理中,除报道中比较集中注意的残留和逆转奥氏体、渗碳体、及M2C、M23C6…     

60 %wt WC镍基涂层组织及耐磨性研究

为提高AF1410钢的耐磨性,通过激光熔覆技术在其表面制备了WC含量为60的NiCrBSi涂层,利用扫描电镜,X射线衍射,摩擦磨损,硬度等实验评价涂层的微观组织,硬度和耐磨性。结果表明:涂层内的典型物相是WC,W2C等含钨碳化物树枝晶以及树枝晶间隙内颗粒状分布的γ-(Ni,Fe)固溶体和M23C6、M7C3等碳化物。涂层硬度和耐磨性得到有效增强,其最小平均磨损率达到878×10-8mm3/(N·m),相对基体减少了近60倍。     

激光熔覆制备马氏体/铁素体双相不锈钢层的力学与腐蚀性能研究

为了获得高强度、高韧性、耐蚀性好的铁基合金涂层,在Q235基体上激光熔覆了含微量硼元素的低碳、低合金马氏体/铁素体双相不锈钢(M/Fss)合金粉末。研究结果表明,所制备的激光熔覆层表面具有金属光泽,内部无夹杂、气孔等缺陷。熔覆层由马氏体、铁素体、主要沿枝晶间呈均匀不连续分布的硼碳化物M(B,C)和少量在枝晶内析出的M23(B,C)6组成(M为Fe、Cr等)。熔覆层力学性能优异,平均显微硬度为431.9HV,抗拉强度为1352MPa,延伸率为12.3%,且耐腐蚀性能优于1Cr13马氏体不锈钢。这一新型的M/Fss涂层可广泛应用于同时对力学性能和耐蚀性能要求高的工作环境下的铁基材料表面改性或再制造。     

SnAgCuY钎料高温时效过程的显微组织演化

研究了无铅钎料合金Sn3.8Ag0.7Cu高温时效过程中显微组织,特别是金属间化合物(IMC)的演化规律,以及稀土Y的添加对其产生的影响。结果表明:在高温时效过程中合金内部组元发生扩散与重组,伴随着共晶组织的逐渐溶解,新的IMC在组织内部呈球形弥散析出。结晶初期形成的具有规则形状的较粗大的IMC逐渐发生解体,树枝状富Sn相逐渐取代共晶组织成为受腐蚀的对象。随着时效时间的延长,合金内部各组元的成分也在不断发生变化。     

Si(111)碳化层中的SiC结晶

为采用HFCVD技术在Si（111）衬底上外延3C－SiC薄层而在Si表面首先进行碳化处理．实验样品用H2稀释的碳化物气氛进行碳化处理，热丝温度约为2000℃，衬底温度在950℃到1100℃之间．用X射线衍射、电子衍射和俄歇能谱等分析手段研究了碳化层的组分及结构，发现碳化层可由合碳硅结晶层、3C－SiC结晶层和富碳的3C－SiC结晶层组成．适当控制碳化条件可以调整3C－SiC结晶层的比例．     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its