计算机通信

（二）计算机通信网络体系结构１　引言随着计算机系统网络化互连业务的需要,国际标准化组织（ＩＳＯ）吸取了ＳＮＡ、ＤＮＡ以及ＡＰＰＡ网［因特网（Ｉｎｔｅｒｎｅｔ）的前身］等网络体系结构的成功经验,参照Ｘ．２５接口规程特性,从用户系统信息处理的角度,提出了开放系统互连参考模型（ＯＳＩ－ＲＭ）,即ＩＳＯ７４９８,并于１９８４年批准为国际标准。与此同时,ＩＴＵ－Ｔ从通信系统的角度,进一步研究了如何实现设备的兼容性要求,规定了ＩＴＵ－Ｔ应用ＯＳＩ－ＲＭ、各层提供的服务以及开放系统中对等实体间通信所必须遵循的…     

高速RS-232接口

ＰＣ的ＲＳ—２３２接口一般工作 速度为１１０ｂｐｓ（每秒位）～１９２００ ｂｐｓ。ＭＡＸＩＭ公司的几种ＲＳ—２３２收发器,可支持高达１００００００ ｂｐｓ。另外,这些收发器的输出发送器和输入接收器是ＥＳＤ保护的（＋／－１５ＫＶ）。图１是用ＤＳＰ５６Ｆ８０３（Ｍｏｔｏｒｏｌａ公司的ＤＳＰ）和ＭＡＸ３２２７（ＭＡＸＩＭ公司的高速ＲＳ—２３２）实现ＤＳＰ １Ｍ ｂｐｓＲＳ—２３２接口的设计实例。 ＤＳＰ ５６Ｆ８０３的串行控制接口（ＳＣＩ）提供发送数据输出（ＴＸＤＯ）和接收数据输入（ＲＸＤＯ）信号。其余挂钩…     

ZMR SOI结构的电物理特性：研究方法与试验结果

ＺＭＲＳＯＩ结构的电物理特性：研究方法与试验结果＝〔刊，俄〕－１９９４，２３（６）－１８～３１要制作ＳＯＩ器件和集成电路，就必须了解硅薄膜和硅／介质界面的电物理特性。但是，由于ＳＯＩ结构有一系列特殊的特性（具有导电衬底，两个硅／电介质界面，在一定条件...     

SONY DSR—30P DVCAM录像机

１　磁带本录像机使用标准ＤＶＣＡＭ或Ｍｉｎｉ－ＤＶＣＡＭ磁带。２　菜单设置·按ＭＥＮＵ（菜单）键,再按ＣＵＲＳＯＲ（光标）的↑／↓键,选定ＳＥＴＵＰＭＥＮＵ（菜单设置）后,按ＥＸ－ＥＣＵＴＥ（执行）键,进入菜单设置：（１）Ｌ１ＩＮＶＩＤＥＯ（１路输入视频）·Ｓ当Ｓ端和复合端都接有信号时,若要选择Ｓ视频信号,则设置到Ｓ的位置。若只有复合端接有信号,则自动选择复合视频。·ＮＯＲＭ当Ｓ端和复合端都接有信号时,若要用复合视频信号,则选择ＮＯＲＭ项。（２）ＡＵＤＩＯＭＯＤＥ（音频模式）·１６当设置到１６时…     

五品牌手机生产日期轻松辨

爱立信（ＥＲＩＣＳＳＯＮ） 输入（右*左*左*左*）后会显示： ＡＢＣＤＥＦ ＧＨＩＪ ＰＲＧＸＸＸＸＸＸＸＸＸ ＡＢＣＤＥＦ为年、月、日（ＹＹ／ＭＭ／ＤＤ） 诺基亚（ＮＯＫＩＡ） 输入*＃０００＃显示： ＶＸＸ·ＸＸ为软件版本, ＤＤ－ＭＭ－ＹＹ为生产日期（日－月－年）, ＮＸＸ－Ｘ为手机型号：如３３１０为ＮＨＭ－５。 摩托罗拉（ ＭＯＴＯＲＯＬＡ） 查ＭＳＮ（在手机标贴上）内容,ＭＳＮ长度为十位： ＡＡＡ－Ｂ－ＣＣ－ＤＤＤＤ ＡＡＡ为型号代码（Ａ７４－ Ｃｄ９２０／９２８, Ａ８４ ２０００）; Ｂ为产地代码（２－…     

雷卡1X—AIME CDMA信令测试仪

雷卡１Ｘ－ＡＩＭＥ（Ａｉｒ Ｉｎｔｅｒｆａｃｅ Ｍｏｎｉｔｏｒ／Ｅｍｕｌａ－ｔｏｒ）系统是专门为手机的ｃｄｍａＯｎｅ及 ｃｄｍａ２０００ １Ｘ信令测试而设计的，广泛应用于新产品开发、兼容测试、评估和服务支持，是手机生产研发时必不可少的测试工具。 目前，１Ｘ－ＡＩＭＥ系统可支持ｃｄｍａＯｎｅ＋ｃｄｍａ２０００的标淮，包括：ＩＳ９５Ａ、ＩＳ９５Ｂ、Ｊ－ＳＴＤ－００８、ＡＲＩＢ－Ｔ５３、ＫＯＲＥＡＮ ８００ＭＨＺ、ＫＯＲＥＡＮ ＰＣＳ、ＩＳ－２０００ １Ｘ等，并且兼容ＣＤＧ２２、ＣＤＧ５３及ＣＤＧ５７的第二阶…     

集成电路封装技术常用术语（续Ⅲ）

集成电路封装技术常用术语（续Ⅲ）丁一６６ＳＯＪ（ＳｍａｌｌＯｕｔ－ＬｉｎｅＪ－ＬｅａｄｅｄＰａｃｋａｇｅ）Ｊ形引脚小外型封装。表面贴装型封装之一。引脚从封装两侧引出向下呈Ｊ字形，故此得名。通常为塑料制品，多数用于ＤＲＡＭ和ＳＲＡＭ等存储器ＬＳＩ电路，...     

在SIMOX结构中辐照诱生ESR有源缺陷

在ＳＩＭＯＸ结构中辐照诱生ＥＳＲ有源缺陷＝Ｉｒｒａｄｉａｔｉｏｎ－ｉｎｄｕｃｅｄＥＳＲａｃｔｉｖｅｄｅｆｅｃｔｓｉｎＳＩＭＯＸｓｔｒｕｃｔｕｒｅｓ［刊．英］／Ｓｔｅｓｍａｎ，Ａ．…∥ＩＥＥＥＴｒａｎｓ．Ｎｕｃｌ．Ｓｃｉ．－１９９０．３７（６）．－２０...     

β—FeSi2／SIMOX—一种新结构的光电子材料

本采用固相外延法在ＳＩＭＯＸ衬底上生长了β－ＦｅＳｉ２薄膜，采用Ｘ射线衍射（ＸＲＤ），卢瑟辐背散射（ＲＢＳ）以及自动扩展电阻测量研究了样品的多层结构，Ｒａｍａｎ谱表征说明它与直接在硅片上生长的薄膜具有类似的晶格振动特性。     

欧美的数字声音广播（DAB）技术

本文介绍和比较了欧洲Ｅｕｒｅｋａ－１４７和美国ＵＳＡＤＲ两种数字声音广播体制，讨论了信源编码算法ＭＵＳＩＣＡＭ，以及编码正交频分复用（ＣＯＦＤＭ）和带内同频（ＩＢＯＣ）传输技术。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.