高密度可编程逻辑器件ATV2500H／L简介

近年来，随着集成电路技术的飞速发展，出现了一种用户可定义其逻辑功能的器件－可编逻辑器件，简称ＰＬＤ器件。其发展经历了ＰＲＯＭ、ＦＰＡＬ、ＰＡＬ、ＧＡＬ，直至现在广泛应用的大规模ＰＬＤ器件ＥＰＬＤ、ＣＰＬＤ及目前最流行的可编程逻辑门阵列ＦＰＧＡ。本文详细介绍了美国受特梅尔公司的ＥＰＬＤ－ＡＴＶ２５００Ｈ／Ｌ的内部结构和功能特点。读者只要再学会ＴＡＮＧＯ－ＰＬＤ、ＡＢＥＬ、ＣＵＰＬ等语言中的一种，便能     

TAB器件的电特性分析

本文介绍了自动带焊（ＴＡＢ）器件的载带结构及其电参数，构造了集中参数的等效电路．用ＰＳＰＩＣＥ程序对ＴＡＢ器件和引线键合器件的高频特性进行分析和对比后，阐明了ＴＡＢ器件在高频特性方面优于传统封装形式的器件。通过长线模型，模拟了ＴＡＢ器件的延时特性；并分析了ＴＡＢ器件的热特性。     

GTO关断特性的SPICE模拟

本文提出了用于模拟ＧＴＯ关断特性的ＳＰＩＣＥ等效电路模型．根据器件的工作特性并结合器件结构提取模型参数．用此模型对１０００Ａ／２５００Ｖ阳极短路型ＧＴＯ的关断特性进行了模拟，包括关断电流拖尾现象在内的整个关断过程，模拟结果与器件的测试结果吻合较好．     

一种高性能的低温硅双极晶体管

本文设计并研制出在液氮温度下，ｈＦＥ≈３００；在１０Ｋ下，ｈＦＥ＝２１．６的高性能硅双极晶体管，此值优于文献报导的水平，测量了该器件在７７Ｋ的Ｉｃ，ＩＢ－ＶＢＥ特性和ｈＦＥ－１／Ｔ特性，并对这些曲线的解释进行了新的理论探讨。     

双极型FET：一种综合了BJT和FET工作方式的新型功率器件

本文介绍了功率ＢＭＦＥＴ的结构和性能。并对介于标准垂直ＪＦＥＴ和功率ＢＪＴ之间的新型ＢＭＦＥＴ的实际单元结构的导通和关闭状态特性进行了讨论。同时还讨论了表面栅区的高斯掺杂分布对阻断电压的影响。在相同尺寸和掺杂的条件下，将这一新型ＢＭＦＥＴ器件与标准功率双极晶体管进行了对比分析。分析结果表明，新型ＢＭＦＥＴ在穿通和大电流增益时具有较高的额定电流，极低的饱和电压，而且不受电流拥挤现象的影响。     

SiC功率器件

本文采用计算材料优值和器件模拟的方法预测了ＳｉＣ的高频大功率特性，综述了目前ＳｉＣ功率器件的发展最高水平，高压整流器和晶体管如功率ＭＯＳＦＥＴｓ，ＪＦＥＴｓ，ＭＥＳＦＥＴｓ都具有较小的有源面积，而性能已初步显示出ＳｉＣ高温大功率工作的优势。     

利用电子束掺杂技术制备微米,亚微米P—MOSFET器件

本文对辉光放电电子束在ＭＯＳＦＥＴ中的应用进行研究。结果表明，利用辉光放电电子束掺杂方法成功地实现了微米、亚微米Ｐ－ＭＯＳＦＥＴ。器件的漏流小，Ｉ－Ｖ特性好，源漏结浅、均匀和横向掺杂效应小。此方法与常规ＭＯＳ工艺兼容，所需的设备结构简单、操作方便，价格低廉，易于推广到ＶＬＳＩ中去。     

短沟道MOSFET器件物理模型研究

通过求解经修正的二维泊松方程，并考虑了主要的短沟效应和高场效应，得到一个描述短沟道ＭＯＳＦＥＴ器件Ｉ－Ｖ特性的统一物理模型。该模型适用于包括亚阈区在内的不同工作区域，对０．８μｍ和１．４μｍ器件的漏极电流特性能较好地描述，可应用于亚微米、深亚微米级ＭＯＳＦＥＴ的电路模拟。     

双管S型负阻器件的研究

模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有Ｓ型负阻特性的两端器件。在此实验基础上研制得到一种双向两端Ｓ型负阻器件（ＴＢＮＲＤ器件）。本文还对该器件产生负阻的原因进行了理论分析。     

BMHMT－Bi－MOS混合模式晶体管

本文提出了一种Ｂｉ－ＭＯＳ混合模式晶体管──ＢＭＨＭＴ，其本质上为表面ＭＯＳ与ＬＢＪＴ共同工作的四端ＭＯＳＦＥＴ，工艺上与ＭＯＳＦＥＴ全兼容。ＢＭＨＭＴ具有比单一ＭＯＳ、单一ＬＢＪＴ及他们的简单叠加更高的电流驱动能力，ＢＭＨＭＴ作为一种发射结具有赝异质结特性的器件，在输出电流为每单位宽度０．５ｍＡ时电流放大倍数可高达２５００（Ｖ＿（ＢＳ）＝０．６２Ｖ），在小的基区电流下，ＢＭＨＭＴ的短沟效应明显小于ＭＯＳＦＥＴ。ＰＩＳＣＥＳ模拟结果与实验结果成功地证明了ＢＭＨＭＴ的以上特点。     

硅光电负阻器件的光双稳态瞬态特性

在本文中,一方面对电路参数与硅光电负阻器件的光学双稳态开关时间的关系进行了研究,另一方面对器件在低、中、高三个不同输入光强区的光学双稳态响应的变化趋势进行了研究.硅光电负阻器件包括有各种类型,本文主要对"λ"型双极光电负阻晶体管(PLBT)以电阻和光电二极管作为负载的情况进行了讨论.     

非线性光耦合器及其响应保持功能

将发光器件和硅光电负阻器件面对面地封装在一起,其间实现电隔离,构成一种新型光耦合器.由于光电负阻器件具有双稳和自锁特性,这种非线性光耦合器具有响应保持功能.文章以PDUBAT为例从实验方面证实了响应保持功能的存在,并提出利用PLBT实现响应保持功能的设想.     

根据行为级模型方法对CMOS 图像传感器的BJPG 晶体管的分析

本文提出一种新的用于CMOS图像传感器像素的光电检测器－－双极结型光栅晶体管。由于引入p^ n注入结，光电荷的读出速率大大增加，改善了CMOS图像传感器的工作速率和响应灵敏度。尽管传统的光电集成电路的电路级模拟采用微电子集成电路的模拟方法，但是光电子集成电路不仅含有微电子器件和电信号还含有光电检测器和光信号，采用传统的集成电路模拟方法有其局限性。本文提出一种行为级模拟方法（光电子检测器设计的新方法，利用C、MATLAB和HSPICE等语言写出光电子器件的模拟器）来模拟分析双极结型光栅晶体管的特性。基于0.6μm CMOS工艺的分析结果表明双极结型光栅晶体管在不同栅氧化层厚度随栅压变化与传统光栅晶体管的特性一样，但光电流密度呈指数式增长且光电流密度增大，因此改善了CMOS图像传感器的工作速率和响应灵敏度。     

An optronic negative resistance circuit

A negative-resistance circuit has been constructed with the combination of a p-n-p junction transistor, a light emitting p-n diode and a n-p-n photo transistor. The circuit provides negative-resistance voltage-current characteristics in both for increasing and decreasing the positively applied voltage, and holds a facility to obtain external control optically. The breakover voltage can be set at a desired value according to the adjustment of bias resistances for the p-n-p junction transistor.     

Design of Schottky-barrier diode clamped transistor layouts

Describes an approach to the design of Schottky-clamped integrated circuit transistor layouts. Three-dimensional distributed resistances are modeled using a grid of lumped resistors. A computer circuit analysis program is used to obtain a simple lumped equivalent circuit for the clamped transistor. The equivalent circuit enables accurate prediction of the useful range of d.c. operating conditions for a given structure. An improved small-area clamped transistor layout has been developed using this approach.     

Computerized Calculation of Small Signal and Noise Properties of Microwave Transistors

The small signal and noise equivalent circuit of a microwave transistor is evaluated using an analog simulation model. The noise figure has been determined with the same model as a function of the source admittance and the frequency. The s parameters and noise figures are compared with the results calculated on a digital computer.     

An experimental study of distributed effects in a microwave bipolar transistor

Conventional microwave transistors are normally considered to operate as a single lumped circuit element. That this is only an approximation has been accommodated in the past by the use of an equivalent circuit including some inductance to correct for the finite size of the contact metallization. The effect of this inductance can drastically change the properties of the transistor when the size of the device becomes a significant part of an electrical wavelength. To study this form of behavior, a transistor with an electrical length on the order of one eighth of a wavelength was constructed. When tested in a suitable circuit, feedback effects involving the metallization inductance caused the transistor to produce four times more stable power gain than would be expected from a conventional transistor having the same area. Amplifiers designed using the new transistor and an equivalent conventional transistor had equal gain-bandwidth products. Other circuit properties of the transistor were observed to be significantly modified, the emitter lead inductance becoming an insensitive parameter while the base lead inductance became very critical. The measured properties of the transistor were found to be in good agreement with theoretical predictions.     

Equivalent circuit approach for single electron transistor modelfor efficient circuit simulation by SPICE

A new compact DC/transient single electron transistor model for circuit simulation by SPICE is introduced. This model includes newly developed equivalent circuit approach based on the time-dependent master equation and an exact conductance or transient conductance model. The simulation speed of this model is improved compared with that of the previous models     

Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior

Implants create isolated electric charge under the channel region of nFET and pFET. By this, a new local extrema in the transfer slope is obtained while maintaining low leakage in off state. The results are explained by electro-static field simulation and yield in a circuit model with two parallel channel resistors, indicating a double channel field effect transistor (DCT). The new DCTs allow complex functions in logic or small transistor bit cells in the future.     

基于电压阀和电流阀模型的晶体管放大电路分析

依据已经提出的电压阀和电流阀两种非线性电路模型以及由电压阀和电流阀构造出的晶体管模型,进一步对各种晶体管放大电路进行了非线性模型等效,并在等效的模型电路基础上,研究晶体管放大电路的静态工作点计算方法、动态参数计算方法.该方法具有电路直观、概念清晰、分析计算准确等特点,而且能够判断出晶体管是否截止或饱和、动态工作范围大小等.