共查询到20条相似文献,搜索用时 140 毫秒
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介绍了GaAs高速集成电路在片瞬态参数测试的技术原理和系统组成。利用该系统对部分GaAs高速电路进行的测试结果表明,该系统行之有效。 相似文献
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介绍了自主开发的多个完整实用的GaAs IC CAD软件,包括微波无源元件建模、微波有源器件测试建模、微波毫米波IC CAD、光电集成电路CAD、GaAs VHSIC CAD、微波高速MCM CAD等,并简要介绍了针对GaAs工艺线的建库工作。以上软件和库已用于多个通信电路的设计。 相似文献
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研究了电压控制振荡器(VCO)的相位噪声与构成该振荡器的有源器件的低频噪声的关系,测试了SiBJT、AlGaAs/GaAs HBT和GaInP/GaAs HBT的低频噪声,并分析了各自低频噪声产生的原因,提出了选择GaInP/GaAs HBT VCO来实现微波固体振荡器低相位噪声化这一发展方向。 相似文献
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本文提出了一种台面型全自对准结构AlGaAs/GaAsHBT的制造方案,对其中的欧姆接触金属系统的制备,AlGaAs/GaAs材料的选择性腐蚀及聚酰亚胺的反应离子刻蚀终点监控等关键工艺技术进行了研究,并给出了应用该工艺研制的HBT器件的初步结果。 相似文献
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目前直接电光取样技术是在片检测砷化镓高速集成电路内部动态特性的最好方法。我们建立了半导体激光器电光取样系统,测试了梳状信号发生器输出的43.7ps的电脉冲信号以及频率5GHz的微波信号,并测试了频率3GHz的微波信号的位相移动或时间延迟以及铁氧体微波移相器的静态特性曲线,这个系统将被应用于砷化镓高速集成电路内部动态特性在片检测。 相似文献
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《Electron Device Letters, IEEE》1983,4(4):119-121
A simple experimental system is described which permits simultaneous monitoring of all theW -band andU -band spectral components generated by a W-band GaAs transferred electron (Gunn) oscillator. By examining the voltage and mechanical tuning behavior of several such oscillators their harmonic operating mode has been confirmed. Discussion of a theoretical treatment of the fundamental and harmonic mode is presented to highlight the likely pitfalls in the interpretation of the tuning behaviour seen from a crossguide oscillator test circuit. This combination of practical and theoretical results is used to show that the recently published claim for nonharmonic operation ofW -band GaAs TEO's is not yet proven. 相似文献
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设计并模拟分析了光纤通信用超高速单电源 Ga As判决再生电路 ,采用非掺 SI Ga As衬底直接离子注入、1μm耗尽型 Ga As MESFET、平面电路工艺研制出单片 Ga As判决再生电路。实验测试结果表明 ,该电路可对输入信号进行正确的“0”、“1”判决 ,并经时钟抽样后 ,输出正确的数字信号 ,传输速率可达 2 .8Gbit/s,可用于覆盖 2 .5Gbit/s系列光通信系统 相似文献
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《Electron Devices, IEEE Transactions on》1987,34(5):957-960
Modifications of several dc parameters of GaAs MESFET's induced by accelerated aging at 300 °C have been investigated in a test pattern configuration. Two different gate metallization structures have been examined, namely GaAs/Ti/Au and GaAs/Ti/Pd/Au. The gate diode and the MESFET characteristics of the former degrade noticeably upon annealing, while they are less affected by the thermal treatments for the latter. This different behavior is probably induced by the formation of different compounds at the metal-GaAs interface, which modify the gate diode properties. 相似文献
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介绍了微波低噪声GaAs FET恒定应力加速寿命试验结果,沟道温度T_(ch)为145℃时,平均寿命MTTF为9.64×10~6h,最主要的失效模式是源漏饱和电流I_(DSS)退化降低。建立了表征GaAs FET稳定性的敏感参数I_(DSS)的退化模型InP=a+blnt,分析了I_(DSS)退化与温度应力的加速关系。提出了快速推断器件可靠性的建议。 相似文献
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《Microwave Theory and Techniques》1981,29(6):535-541
A cryogenic 90-GHz receiver has heen developed with a noise figure of 2.36 dB ((double sideband) (DSB)) and an instantaneous band-width of 1.2 GHz. The cooled front-end consists of a Schottky-barrier mixer followed by a GaAs FET IF amplifier. The radiometer is small in size and weighs only 52 kg, including the refrigerator system. It is part of an airborne imaging system, that has been fight-tested aboard a Dornier Do 28 aircraft. First test results are presented. 相似文献
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在波长300~1 100nm范围内,对GaAs进行了电反射光谱的研究。建立了电反射光谱的测试系统,并对实验和理论作了详细分析。推导了某一固定波长电反射光谱与半导体表面掺杂浓度的理论关系。并利用电反射光谱的实验曲线计算了GaAs的表面掺杂浓度,所得结果与电化学C—V的测试结果一致,其精度为5%。 相似文献
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