二维码智能末端配送系统的实现

伴随着电子商务的飞速发展，中国的快递行业进入了爆炸式的增长时期，但是末端配送却成为制约快递业发展的瓶颈。基于二维码的智能末端配送系统将二维码作为客户与订单的对应码，利用二维码的快速识别与防伪特性，结合配送柜的按条码开箱功能实现末端配送系统的智能化。     

移动跟踪系统在电力物资配送中的应用研究

随着电网企业物力集约化进程的推进和仓储配送信息系统的应用,物资全流程业务数据分散、仓储配送运作效率不高等问题日益显现.因此,研发应用一套基于物联网与移动应用技术相结合的物资配送全过程移动跟踪系统,有利于配送全过程线上线下信息的互联、状态的跟踪.本文从移动跟踪系统的技术架构、业务内容、数据安全等方面开展全面的研究,论证新技术在电力物资配送中的应用,从而提升仓储配送的可追溯性,促进物力管理的高效、便捷.     

基于OneNET云平台和二维码技术的快递物流配送系统设计

网购的兴起带动了物流产业的发展,目前大多数用户通过与快递员直接联系领取快递。然而,快递配送的过程中存在用户时间和快递人员送件时间冲突、用户的个人信息泄露、配送效率低下等问题。文章分析了现有快递物流配送系统的发展现状,并针对上述问题提出了一种基于One NET云平台和二维码技术的快递物流配送系统方案。该系统可以为快递工作者和用户提供一个安全有效的快递配送方案,提升了配送效率。     

物流智能配送系统集成一体化探讨

随着科学技术的高速发展,社会逐渐迈向智能化时代。在当代社会,物流与人们的生产生活息息相关,而配送是联系卖家和买家的重要环节,同时也是物流的关键之所在。因此,物流配送企业必须要充分利用物流智能配送系统,提高其服务质量和水平,推动物流行业的又好又快发展。     

基于ARM嵌入式系统的自动化配送系统

随着计算机技术和无线通信网络的发展,远程监控系统和自动化控制系统在工业领域得到了广泛的应用。介绍了基于ARM微处理器的网络视频监控系统的组成和实现自动化配送的流程,着重阐述了自动化配送系统的原理,设计方案,硬件模块和软件模块的实现方法。     

一种基于物联网的智能配送终端系统设计

针对物流行业中存在的工作效率低下、送取货时间错位、品牌形象难以树立等问题,提出一种智能化配送终端系统的设计方案。首先介绍物流行业最后一公里送货的现状,配送中存在的各种问题;然后给出本设计的系统架构、硬件框图及软件流程图。该设计实现了配送的智能化,能有效地提高物流配送效率,树立品牌形象。     

现代物流配送中心信息系统设计分析

针对现代物流配送中心的资源整合及智能化运作的需要,在确定建设信息化、智能化、可视化的新型配送系统原则的基础上,全面进行配送环节的信息系统分析,提出了现代物流配送中心信息系统架构解决方案,为建立省、市、县三级物流配送网络、共享信息和配送资源提供技术支持.     

基于物联网的疫情防控免接触智能配送车、柜设计

针对疫情防控期间快递配送中人与人接触感染以及快递丢失、收取快递时间冲突等问题,设计了一套基于物联网技术的疫情防控免接触智能配送车、柜系统,打破了“人+车”的传统配送方式,能够实现快递车自动检测并将物品配送到快递柜中的功能。快递柜配备与快递车相对应的串口通信指令,可以达到自动开关门效果。通过对树莓派和主控机的深度学习,配送体系达到了自动化、智能化的效果,此外还搭载了深度相机和雷达检测模块,可对周围环境进行分析建图,并通过建图模型实现全自动导航运输,有效解决了收取快递时间冲突问题。     

电力企业物资配送管理

随着电力企业的迅速发展,电力物资配送管理所发挥的作用不容忽视,它与电力企业的经济效益与发展前途息息相关.现在大部分企业都运用科学合理的物资配送管理策略,使传统的流通分割与封锁的局面得以打破.但是,在现阶段的电力物资配送体系中,还具有诸多管理方面的缺陷,需不断获得改善.因此,本文笔者就对电力企业物资配送管理进行了探析,并针对其管理出现的缺陷提出几点改善策略.     

VMI环境下的合作配送策略分析

供应链中的信息共享及合作带来的利益往往集中于上游核心企业。在供应商管理库存(VMI)环境下，哪些因素能影响上下游企业利益的分配，核心企业应该怎样通过对策略的调整来影响利益分配的平衡及供应链的运营效率。文中通过在原有库存模型中引入对配送间隔的分析和对VMI的仿真，证明了配送批量越小或参与合作的下游企业越多，则供应链更加敏捷，下游企业得益越多；若配送批量越大，上游核心企业从规模化的配送中节约了更多的配送成本，而零售商则需要更高的库存存货以保证其供货率。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.