TD-SCDMA系统中基于训练序列的信道估计

TD—SCDMA系统中的信道估计技术对整个系统的实现具有至关重要的作用，是后续基带算法实现的关键。如果信道估计算法太复杂和不够准确都将对后面的算法实现产生不利影响。论述了TD—SCDMA系统中训练序列的构成，并结合联合检测算法分析了基于训练序列的信道估计所产生的效果。     

基于改进广义Steiner估计的MC-CDMA系统空时多用户检测

研究了频率选择性瑞利衰落信道中的同步MC-CDMA系统上行链路空时信道估计及多用户检测算法。考虑对应于子载波的衰落系数是信道冲激响应的离散傅里叶变换,通过在两个数据块之间插入训练序列(midamble)进行所有用户的联合信道估计。首先采用广义Steiner估计器(GSE)来进行阵列天线信道冲激响应的初始估计,然后提出一种简单有效的适用于均匀线阵的互相关波达方向(CCDOA)估计算法,用以改进阵列天线信道冲激响应的估计,从空间的角度降低了信道响应中的噪声。在估计出所有用户空时信道参数的基础上,构造最大比合并(MRC)、解相关检测和最小均方误差检测(MMSE)来进行信号检测。仿真结果表明基于互相关DOA估计的改进信道估计算法与广义Steiner估计器相比在系统性能上有显著的改善。     

针对业务变化的TD-SCDMA信道码分配算法探讨

在三代移动通信TD—SCDMA系统信道的分配是载波、时隙、信道码（扩频码）的分配。本文针对用户使用的业务不断变化的TD—SCDMA系统提出一种新的信道码分配算法，对算法的流程进行详细的描述，并且通过仿真证明新算法在呼叫阻塞率方面强与原有信道码分配算法，对于工程的应用有重要的价值。     

在TMS320C5510上实现 TD- SCDMA终端的信道编解码

TD—SCDMA是中国提出的第三代移动通信标准，其终端系统的信道编解码既要考虑到芯片的处理能力，又要充分利用芯片的专用指令来提高运算效率。通过对TD—SCDMA系统及其信道编解码过程和TMS320C5510芯片的详细研究，经过大量的编程和调试工作，高效地在TMS320C5510平台上实现了TD—SCDMA终端的信道编解码处理。     

TD-SCDMA系统的动态信道分配技术与性能

TD—SCDMA是第三代移动通信系统三大国际主流标准之一。该系统利用动态信道分配技术，可以充分发挥TD—SCDMA系统资源分配灵活高效的特点．从而能在对称和非对称的3G业务中获得最佳的频谱效率。介绍了TD—SCDMA系统中的动态信道分配(DCA)技术．详细论述了信道优先级排队、信道选择、信道调整、资源整合等DCA技术的主要处理过程，并分析了DCA算法的系统性能。     

TD-SCDMA系统中信道估计算法的性能分析及改进

TD-SCDMA系统中普遍采用Steiner信道估计算法,但是由于信道估计器受背景噪声的影响,会造成信道冲激响应的幅度和时延比真实值大。该文提出了两种对Steiner信道估计的改进方法,它们分别设定了一定的门限。仿真结果表明,通过这种处理,系统的输出性能得到明显改进。     

TD-SCDMA系统中低代价信道估计方法的改进

TD-SCDMA系统中运用B.Steiner估计器是一种低代价的信道估计器，其估计精度受信道中加性噪声的影响，导致估计值与真实值相比误差较大，影响系统性能。本文提出一种门限处理方法，对Steiner估计器得到的信道响应进行改进，削弱噪声影响。模拟实验表明，改进的信道响应更接近真实值，能提高系统性能。并且，这种后处理方法简单，易于实现，很小或几乎不增加系统的运算。     

新型信道估计器

提出了一种新的信道估计器－－“结合型信道估计器”此估计器结构简单，容易实现。它可对固定信道和慢性变信道的采样冲激响应进行了估计。分析和计算机模拟表明；结合型信道估计器优于Ｈａｍｉｅｄ ＫＡ所提的非迭代器型估计器及ＬＡＳ估计算法，在一些条件下甚至估于ＲＬＳ算法。     

一种基于数据域统计信息的信道估计改进算法

TD-SCDMA系统中, B.Steiner信道估计算法实现简单,但由于受到噪声的影响,其导致估计的精度有限。基于此,论文提出了一种基于数据域统计信息的信道估计改进算法。该算法首先基于Steiner算法对信道进行初步估计。然后,基于数据域对信道的统计特征进行更新后再进行信道估计。仿真结果表明,改进的信道估计算法更准确,且适用范围广,尤其适用于快速时变信道。     

空时分组码MC-CDMA系统多用户检测

本文研究了在频率选择性瑞利衰落信道中工作于时分双工(TDD)模式的多载波码分多址(MC-CDMA)系统上行链路,在用户终端处使用两个发射天线,采用基于空时分组码的发射分集。考虑对应于子载波的衰落系数是信道冲激响应的离散傅里叶变换,给出了基于空时分组码的MC-CDMA系统上行链路信号模型。采用适用于同步CDMA系统的低代价Steiner估计器来进行基于空时分组码的MC-CDMA系统的信道估计,每个用户终端的两个发射天线各分配一个midamble。研究了基于空时分组码的MC-CDMA系统的解相关多用户检测、最小均方误差(MMSE)多用户检测,进行联合的多用户检测和空时码解码。仿真结果验证了上述模型及算法的有效性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.