基于改进的循环互相关MUSIC算法的波达方向估计

给出了基于循环互相关运算的信号模型，根据该信号模型，运用改进的循环互相MUSIC算法得到了对具有循环平稳特性的空间源信号波达方向进行估计的有效方法——ICCC-MUSIC算法；定性的分析和仿真实验均表明该方法具有较好的抑制噪声和选择信号的能力，为利用天线阵列提取具有循环平稳特性的源信号提供了较好的实现方法。     

基于循环互相关的二维波达方向估计方法

本文在简化传感器阵列基础上,建立了基于循环互相关的阵列信号模型,并根据该模型,运用波达方向矩阵法提出了一种新的循环平稳源信号二维DOA估计方法.通过利用循环互相关函数建立信号处理模型,使得该方法在继承了一般循环平稳DOA估计方法所具有的优点之外,还具有更好的抑制噪声能力,同时,此方法不仅对窄带信号适用,对宽带信号也同样适用.此外,该方法不需谱峰搜索和二维角度参数配对,具有计算复杂度低的优点.理论分析和仿真结果均说明,本文方法具有较好的噪声抑制能力和信号选择能力.     

基于循环平稳特性的源信号到达角估计方法

分析了SC-SSF算法的不足,给出了统一的循环频域阵列信号模型,并推导得到了一般化的基于信号循环平稳特性的源信号到达角估计方法——GSC-SSF算法,该算法克服了SC-SSF算法的不足,具有更好的实用性.仿真试验比较了两种方法的估计性能,仿真结果说明了所给方法的有效性.     

基于信号-阶循环平稳特性的源信号方向估计方法

本研究并给出了基于信号-阶循环平稳特性的阵列信号模型,根据该信号模型结合最小二乘方法得到了对源方向进行有效估计的算法,并与MUSIC算法作了简单的比较.对单目标和多目标两种情况分别进行了仿真计算,仿真结果说明了所给方法的有效性.     

基于虚拟阵列空间平滑的相干信号DOA估计

 针对相干共轭循环平稳信号的DOA估计问题,提出了一种基于虚拟阵列前后向空间平滑的方法。该方法利用特定阵元输出间共轭循环相关函数的多时延采样,构造出与真实线阵阵元具有一一对应关系的虚拟阵列,并将空间平滑技术应用于该虚拟阵列实现了相干信号DOA估计。理论分析和仿真结果均表明,与FBSS-CCMUSIC算法和CCHAM算法相比,本文方法避免了最优时延选择问题,并获得了更高的DOA估计精度,同时,对信号不同入射方向也具有较好的稳健性。此外,该方法也可推广用于具有循环平稳特性的信号。     

一种新的近场源距离及到达角联合估计算法

该文提出一种基于三阶循环矩的近场源距离以及到达角联合估计算法。该算法充分利用了信号的循环平稳特性以及其空、时域信息,通过构造时空矩阵并进行特征分解获得二维参数的闭式估计。该方法计算简单,无需谱峰搜索,而且二维参数自动配对。与现有的方法相比,该文算法并不要求阵列具有中心对称结构,因此避免了阵列孔径的损失;此外该算法对任意分布的加性平稳噪声以及具有不同循环频率的干扰信号有较好的抑制能力。计算机仿真实验验证了该方法的有效性。     

强干扰/信号背景下的DOA估计新方法

本文针对无源阵列雷达背景提出一种可抑制固定方位强入射干扰/信号的DOA估计方法——干扰阻塞法.该方法充分利用无源阵列环境中存在几个固定方位的强多径干扰/信号的先验知识构造矩阵阻塞抑制已知方位的强干扰/信号,从而能够实时对特定区域内低信噪比信号的方位估计.该方法相对信号分离的松驰算法、高阶累积量算法及循环平稳类算法而言,具有运算量小的优势.     

脉冲噪声下基于循环相关熵和稀疏重构的宽带信号DOA估计

针对脉冲噪声与同频带干扰并存时宽带信号的波达方向(DOA)估计问题,该文提出一种结合循环相关熵(CCE)与稀疏重构的算法。首先,分析了宽带信源的接收信号模型,并利用循环相关熵的性质构造出对脉冲噪声与同频带干扰具有抑制能力的宽带信号虚拟输出阵列。随后对该虚拟输出阵列进行稀疏表示,并通过归一化迭代硬阈值(NIHT)算法进行稀疏重构,从而估计宽带信号的波达方向。实验结果表明,该算法对脉冲噪声和同频带干扰具有很好的抑制作用,并且相较已有算法在估计性能方面有明显的改善。     

一种矢量传感器阵列误差的自校正算法及DOA估计

突破大多数阵列误差校正技术针对标量传感器阵列误差模型的限制,提出一种对电磁场矢量传感器阵列误差进行自校正的方法。该方法针对存在方位依赖阵元幅相误差的矢量传感器阵列模型;所提算法基于子空间的思想可对任意极化状态多源信号的信源方位、极化参数和对应的阵元幅相误差进行无模糊联合估计;该方法适用于具有任意几何结构的矢量传感器阵列,仿真试验表明了该算法的有效性。     

基于对称旋转不变性的非圆相干分布源直接定位算法

针对现有相干分布源直接定位方法中存在的依赖分布模型、计算复杂等问题,该文提出一种基于非圆信号特征的对称旋转不变直接定位算法。该方法首先根据分布源参数化假设建立基于数据域信息的直接位置估计模型,并利用非圆信号特征扩展接收信号的协方差矩阵。然后针对中心对称阵列,证明了相干分布源的确定性角信号分布函数矢量具有对称特性,基于这一特征建立了扩展方向矢量的旋转不变关系;构造了融合多个观测站信息的目标函数,直接估计目标位置,避免了对分布模型的依赖,且降低了待估计参数维度。仿真结果表明,与现有相干分布源定位算法相比,所提算法提高了分布源位置估计精度和效率,避免了对分布模型的依赖,更具实用价值。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.