三维多芯片组件及其应用

一、前言 三维多芯片组件(简称3D-MCM)是在二维多芯片组件(即2D-MCM,通常指的MCM均系二维)技术基础上发展起来的高级多芯片组件技术。二者的区别在于:3D-MCM是通过采用三维(x,y,z方向)结构形式对IC芯片进行立体结构的三维集成技术,而2D-MCM则是在二维(x,y方向)对IC芯片集成,即采用二维结构形式对IC芯片进行高密度组装,是IC芯片的二维集成技术。三维多芯片组     

65nm技术节点套刻控制的经济价值

国际半导体技术发展路线工作组确定了把套刻控制作为65nm及其以下的技术节点未知解决方法的技术障碍。最严重的问题是总的测量方法不确定、CMP工艺的坚固性以及器件的相互关系。系统的根源引起的图形位置误差(PPE)分析在摩托罗拉公司的DanNoble中心已得到确定,即目前传统的框中框式套刻标记在所有的三种类型引起了缺陷。一种先进的利用成像标记的建议是基于栅格型且能被分割成类似于器件图形的特征图形。在采用193nm光刻设备进行多浅沟道隔离图形套刻的情况下,这种标记显示出将总的测量方法不确定因素减少了40%。     

基于利特罗式激光反馈光栅干涉的微位移测量技术

通过在激光反馈干涉(LFI)系统中引入衍射光栅,提出了一种基于利特罗结构的激光反馈光栅干涉(LFGI)技术,用于一维和二维精密位移的测量。半导体激光器出射的光束以利特罗条件入射至反射式全息光栅,衍射光沿入射光方向返回激光腔后,腔内会发生激光反馈干涉效应。引入正弦相位调制解调技术,高精度地测量一维和二维微位移。利特罗结构和LFGI系统具有自准直性好、结构紧凑、易于操作和系统稳定性高的优点。实验结果表明,利特罗式LFGI系统的位移测量精度可以达到10 nm量级。     

三维多芯片微组装组件

三维多芯片组件（3D-MCM）是在二维多芯片组件（2D-MCM,通常指的MCM均系二维）技术的基础上发展起来的高级多芯片组件技术。二者的区别在于：3D-MCM是采用三维(x,y,z方向）结构形式对IC芯片进行三维集成的技术,而3D-MCM则是在二维(x,y方向）对IC芯片集成,即采用二维结构形式对IC芯片进入高密度组装,是IC芯片的二维集成技术。三维多芯片组件技术是现代微组装技术发展的重要方向,是微电子技术领域跨世纪的一项关键技术。     

基于光码的标记扩展性分析

基于光码的多协议标记交换(OC-GMPLS),利用光码分复用(OCDM)技术,将基于波长的标记交换(MPλS)粒度进行了细分,扩大了标记空间;而二维光码增加了一个自由度,扩大了码容量.提出了标记扩展性分析模型,分析了MPλS和OC-GMPLS的标记空间扩展性,并对OC-GMPLS中两种二维光码的标记空间扩展性进行了对比分析.仿真结果表明,OC-GMPLS大大扩展了标记空间,合理选择编码方式可以扩大标记空间.     

平面反射式二维光栅测量系统研究

针对超精密运动台的二维亚微米级精度同步测量需求，提出并建立了平面反射式二维光栅测量系统，研究了平面反射式二维光栅的平面位移同步测量方法，分析了平面反射式二维光栅测量系统的误差传递模型。通过Vold-Kalman滤波算法，对光栅信号中存在的高次谐波误差、幅值/相位误差进行实时修正和滤除。采用反正切细分算法和周期测量法对光栅正交脉冲的频率进行测量，实现对被测目标的高分辨率测量和实时运动速度测量。同时，构建了亚微米级测量精度的平面反射式二维光栅测量系统，测量范围为500 mm×500 mm,x、y方向的定位精度为±0.3μm，测量分辨率为0.005μm。     

同步辐射中X射线二维图像存储探测器的研究

一种新型的x射线二维图像存储探测器的问世,引起了人们的极大关注。被誉为是物理、生物、医学上二维x射线探测技术的“革命”性进展。此系统的核心部件是EaFBr:Eu光激励发光屏(即成像板)。x光激发后形成的色心分布就是x射线图像的潜     

基于OC-GMPLS光网络的新型光码标记性能分析

基于光码的通用多协议标记交换(OC-GMPLS)的交换粒度小,资源利用率高.提出一种利用光码分复用技术(OCDMA)生成光码标记的新型二维光码标记构造方案;设计了基于光码标记交换的系统结构,并在忽略系统噪声的情况下,推导了多用户干扰引起的系统误码率;建立了新型光码标记容量和系统性能关系的理论模型.分析表明:该新型二维光标记构造方案能有效扩展标记空间,增加用户数;对波长进行二次复用,提高了波长利用率.     

双层BOE加工误差对衍射效率的影响分析

随着光学技术的发展,光、机、电一体化成为趋势,要求光学系统做到集成化、阵列化和小型化,二元光学元件由于它在光波变换上的卓越表现受到人们的青睐。双层二元光学元件在宽波段范围内的衍射效率非常高,但在加工时会产生很多种加工误差,比如:高度误差、周期误差、套刻误差等。文中基于标量衍射理论,对在加工中可能出现的高度误差、周期误差、套刻误差等误差以及其对衍射效率的影响进行充分分析,并进行MATLAB模拟。结果表明:异向高度误差对衍射效率的影响大于同向高度误差对衍射效率的影响,所以在加工时应该尽量避免异向高度误差。异向套刻误差对衍射效率的影响大于同向套刻误差对衍射效率的影响,所以在加工时应该避免异向套刻误差。相比高度误差和套刻误差,其他误差对衍射效率有着不同程度的影响。     

激光干涉位移传感法实时检测结构挠度和振动

利用激光干涉位移传感法测量了结构物的高面位移。提出了在x方向及与其相垂直的y方向相互独立的测量光路，以解决构件二维平动检测。对于振动问题，测量了结构物的振动响应特性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.