用于CPT芯片级原子钟的滤波器设计

长期稳定性优化是芯片级原子钟研究的难点问题,本文讨论了在CPT芯片级原子钟长期稳定性优化过程中,滤波器模块的设计原理和要点,并设计了适用于原子钟的巴特沃斯滤波器.最后,基于本实验室所研究的芯片钟系统对该滤波器进行了开环和闭环测试,所得到的千秒稳为6.62×10-12,万秒稳为1.16×10-11,天稳为6.71×10-12.     

星载MEMS原子钟稳频系统的优化及实验研究

简要介绍CPT原子钟工作原理,讨论原子频标的两个重要指标:短期稳定性和频率漂移.对CPT原子钟的锁频伺服控制电路进行系统分析和优化设计,并通过饱和吸收稳频实验验证所设计伺服控制电路的稳频性能,100 s的频率稳定度达到1.6×10-12,有望进一步提高频率稳定性.     

星载MEMS原子钟稳频系统的优化及实验研究

简要介绍CPT原子钟工作原理,讨论原子频标的两个重要指标：短期稳定性和频率漂移。对CPT原子钟的锁频伺服控制电路进行系统分析和优化设计,并通过饱和吸收稳频实验验证所设计伺服控制电路的稳频性能．100s的频率稳定度达到1．6×10^-12,有望进一步提高频率稳定性。     

GPS驯服CPT原子钟方法研究

本文针对全球定位系统（GPS,Global Position System）接收机输出秒脉冲（1PPS,1 Pulse Per Second）信号的特点,以及相干布居囚禁（CPT,Coherent Population Trapping）原子钟输出频率信号的特性,设计并实现了GPS驯服CPT原子钟方案.我们建立了适合抑制1PPS信号抖动的卡尔曼滤波模型,通过理论推导和计算获得了相应噪声参数,并采用卡尔曼滤波器与平均滤波器相结合,对CPT原子钟输出频率实施滤波处理,并用GPS接收机输出的1PPS信号实施频率校准,所实现GPS驯服的CPT原子钟输出频率的中短期频率误差降低半个量级,天频率稳定度提高一个量级.     

Rb^87微型CPT原子钟信号源的设计

相干布局（CPT）原子钟被广泛的应用于通信、导航、电力以及数据传输等各个领域,对国民经济的发展起着举足轻重的作用,因此微型CPT原子钟的研制有着重大的意义。这里针对目前微型CPT原子钟对微波信号源的要求,采用锁相环倍频技术设计了一种中心频率为3.417340GHz的微波信号源,该信号源可以满足Rb87微型CPT原子钟的研制,这为微型CPT原子钟的实现奠定了坚实的基础。     

基于85Rb的微型化CPT原子钟的设计和实现

介绍基于85Rb原子相干布居囚禁(CPT)现象的微型原子钟的设计与实现,系统以MSP430单片机作为主控芯片,实现电流源、TCXO和射频等功能模块,并与CPT原子钟物理部分实现联调与整机封装,实现了高稳定度、低功耗的小型CPT原子钟。整机体积只有31 cm3,功耗为660 mW,测得10 MHz输出信号稳定度约为2×10-10 s-1,4×10-11/1 000 s。系统采用全宽调制在85Rb的D1线实现CPT原子钟方案,可提升CPT共振谱线对比度,提高原子钟稳定度。     

相干布居陷俘原子钟的发展概况

简述了相干布居陷俘（coherent population trapping，CPT）效应的基本原理，介绍了CPT原子钟的研制概况，包括主要方案、特点及研制水平等，最后展望了CPT原子钟的发展和应用前景。     

芯片原子钟——CPT钟研究进展

介绍了基于激光与原子相干布局囚禁(CPT)理论的芯片原子钟(CSAC)钟.该原子钟代表了小型化原子钟未来发展方向,近年来在设计技术、制造工艺以及物理机制方面都取得了较大进展,并实现了芯片级的CPT钟原理样机.预计,在未来3～5年将会有芯片原子钟产品面世.     

相干布居囚禁原子钟光频移性能优化

光频移是影响相干布居囚禁(CPT)原子钟输出频率质量的重要因素之一,优化CPT原子钟光频移特性往往需要很长的调试时间。采用现场可编程门阵列,实现了一种数字正交解调方法,能够方便地优化原子钟与光频移相关工作参数,大大缩短了优化原子钟光频移特性所需时间,减少了调试工作量。该方法应用于原子钟生产可节省产品出厂调试周期和工作量。     

我国首台CPT原子钟样机在武汉研制成功

我国首台相干布居陷俘（CPT）原子钟样机日前在中科院武汉物理与数学研究所研制成功。因其特殊原理，CPT原子钟微型化可达到1cm^3体积和功耗30mW的水平。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.