针对锁相的相对论返波管优化设计

为实现基于相对论返波管振荡器的高功率微波相干合成,开展了针对锁相的低磁场返波管优化设计。通过优化中间调制腔的位置,降低工作模式的Q值,达到降低种子微波功率的目的。以外注入微波锁相方式为例,优化后的器件锁定增益大于20 dB,20 MW的注入微波功率即可实现对GW级的微波输出的相位控制。研究结果对调制电子束锁相也具有参考价值。     

X 波段注入锁定相对论返波管设计

为实现X 波段的相干功率合成,提出了一种高功率的注入锁定相对论返波管模型。器件在结构上分为输入腔和 输出慢波结构：输入腔用于减少注入微波的泄漏,同时腔内的驻波电场可以有效调制电子束;输出慢波段实现调制电子 束的换能输出。模拟表明该结构在注入功率6 kW 的条件下,可以实现2.5 GW输出微波的相位控制。     

两路光纤激光器外腔式互注入锁相实验研究

提出了一种获得相干合成激光输出的新方法。利用45°半透半反分束镜和角锥反射器,通过对两路独立振荡光纤激光器(FL)成功实现外腔式能量相互注入锁相输出,在远场观察到清晰稳定的干涉条纹(可见度约0.5),获得了功率约400mW的相干合成激光输出,功率合成效率接近80%。整个互注入锁相系统中的元件均采用高功率器件,因此本方法可以在更高功率条件下运行。     

注入锁相分频器

注入锁相分频器可在较低输入信噪比下工作,这是其他分频电路不能比拟的优点。本文对注入锁相分频器作了以下工作:(1)给出了输入信号含附加噪声时注入锁相分频器的通用相位方程和等效模型;(2)研究了无噪声条件下调相信号通过注锁分频器的特性及分频器的同步带宽;(3)讨论了输入附加噪声对注锁分频器特性的影响。注锁放大器是本文中n=1的特例,本文的结果也适用于注入锁相放大器。     

C波段磁控管注入锁相的实验研究

为了对C波段磁控管进行大功率功率合成,须进行单管锁相研究,本文主要对单管磁控管进行注入锁相实验研究,并讨论了不同注入功率大小对磁控管输出频谱带宽的影响.实验结果表明,通过注入外部信号的方式对C波段磁控管是能够锁相成功的,锁相后输出功率稳定.在实验过程中取得了大量的试验数据,为下一步功率合成实验提供了实验基础.     

220GHz高功率微波信号源的设计与仿真

本文通过理论分析与数值模拟相结合的方法对220 GHz高功率微波信号源进行了设计与仿真。研究表明,在120 kV注入波电压、4.0 T引导磁场条件下,模拟得到了4.8 MW的信号功率输出,工作频率高于220 GHz。同时,器件输出性能可由注入电压波幅度及外加引导磁场强度调节。     

X波段同轴多注相对论速调管放大器模拟研究

 设计了工作在X波段的同轴多注相对论速调管放大器,建立了带输入、输出波导结构的三维整管模型,采用三维电磁粒子模拟软件对其高频特性进行了优化设计,对电子束经过输入腔后的束流调制、注入微波吸收情况、中间腔对束流的调制以及输出腔的微波提取情况进行了模拟研究.在输入微波功率为70kW,电子束束压为600kV,束流为5kA,轴向引导磁感应强度为0.6T的条件下,输出微波功率达到了1.3GW,效率为43%,增益为42dB,在较低的输入微波功率和较小的轴向引导磁感应强度的情况下,模拟实现了X波段RKAGW级的微波功率输出.     

0.22THz折叠波导行波管放大器理论分析与数值模拟

为了解折叠波导行波管放大器的性能影响因素,在理论分析的基础上,对0.22 THz折叠波导行波管放大器进行系统的数值模拟与分析,重点讨论电子束压、束流、输入信号功率、结构周期数、材料电导率、引导磁场大小、电子能散度以及发射度对器件输出功率水平的影响.发现束压存在最佳工作范围,增加束流可以有效提高器件增益;输入信号不宜过强...     

新型大功率LD非注入区窗口结构研究

提出了一种基于腔面非注入区的新型窗口结构,通过腐蚀高掺杂欧姆接触层,在腔面附近引入电流非注入区,限制载流子注入腔面,减少载流子在腔面处的非辐射复合,提高了激光器腔面的光学灾变性损伤(COD)阈值。同时,引入脊型波导结构,降低了光束的水平发散角。采用该结构制作的器件在功率达到22W时仍未出现COD现象,而无腔面非注入区结构的器件输出功率达到18W时腔面发生COD。同时,采用该结构制作的器件在工作电流为12A时其光束的水平发散角约为10°,而常规电流非注入区结构的器件在相同的工作电流下其光束水平发散角约为15°。     

L 波段磁控管的锁相模拟研究

为了对L 波段磁控管进行锁相合成研究,首先需了解单个磁控管锁相过程,本文采用注入锁相的方式,在磁控管中加入一激励信号,以达到锁相目的。对磁控管的锁相条件进行了讨论及数值分析,利用粒子模拟软件Magic_3D 对锁相过程进行模拟分析。仿真结果表明,L 波段磁控管与注入信号的频率差为0.3MHz,注入电场幅值比为0.248 时能够达到锁相状态,并且锁相功率为19.2KW,效率为70%。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.