双振镜扫描几何畸变的校正

通过理论分析，导出位于Ｆθ透镜前的双振镜扫描系统的扫描几何畸变公式。利用所得到的畸变量对计算机软件进行修正，从而获得校正了畸变的完善图形。实际标记的结果完全证明了理论分析的正确性，并在激光标记系统中得到应用。     

微电子学、集成电路

TN4 9501063321世纪的硅微电子技术展望/石众,管会(电子部东北微电子所)11微处理机一1994,(3)一1一6 文章以发达国家的中长期重点研究课题和其雄心勃勃的各种振兴微电子产业的规划及国际电子器件会议上的最新报道为前提,对21世纪以硅集成电路为核心的硅微电子技术的发展前景进行了展望.表l参7(许)许)TN4 95010636像差畸变及预校正映射/王绍钧(山东工业大学)Ij微细加工技术一]994,(3).一一5 在电子光学系统中,像和物的不相似现象称为畸变.文章根据磁偏转场畸变的物理原因,分析构造畸变及校正的映射函数,并给出校正电路的运算公式及公式的精…     

一种基于同心圆环的图像畸变校正方法

分析了光学成像系统中畸变校正的原理，采用了新的确定畸变中心的方法——同心圆环法；通过选取对应关系，采用多项式拟合技术，确定了该光学系统畸变的非线性变换的明确表达式，进而编程实现了畸变图像的空间变换和灰度变换，得到了校正后的图像，实现了畸变校正．     

大视场短焦距CCD成像系统畸变校正研究

光学成像系统的非线性几何畸变可以利用数字图像处理技术来进行校正。其中，在以径向畸变为主的非线性几何畸变模型中，本文通过对影响畸变参数测量精度的各种因素的分析，提出了相应的畸变校正模型，并对提高畸变校正精度的途径和技巧进行了探讨和尝试。     

平显画面畸变校正电路设计

阐述了平显画面畸变对观察者的影响,说明了平显画面畸变的种类,从多个方面分析造成画面畸变的原因,根据画面畸变原因进行了畸变矫正分析,并给出了一种线性畸变校正电路的设计方案及校正结果。     

MEMS振镜扫描共聚焦图像畸变机理分析及校正

在皮肤反射式共聚焦显微成像过程中，针对MEMS振镜二维扫描引起的共聚焦图像畸变，开展了光束偏转理论分析，得出了投影面扫描图像的具体形状表征，理论畸变图像与真实畸变图像一致，明确了畸变机理，提出一种有效的畸变校正算法，实现对图像二维畸变的校正。首先记录原始光栅畸变图像，然后基于Hessian矩阵提取光栅中心线，拾取特征点并设置基准参考线，通过基于最小二乘法的7次多项式插值法标定二维方向像素畸变校正量，采用加权平均法填补间隙像素灰度值，最终实现图像畸变校正。利用网格畸变测试靶实验得出7次多项式插值后的校正决定系数最高、均方根误差值最低，整幅512行图像在7次多项式插值后最优行数占379行，比例为74%，通过残差分析，二维方向上残差最大为4个像素，最小为0个像素，平均为1.15个像素，校正结果较为精确。皮肤在体实时成像实验显示，图像畸变校正后组织结构特征更加真实准确，表明这种校正算法有效可行，有助于皮肤疾病的准确诊断。     

一种实用广角成像系统几何畸变数字实时校正方法

图像的几何畸变广泛存在于应用广角镜头的成像系统，畸变的存在尤其不利于基于图像分析的定量分析领域。针对一个基于图像分析的红外角位置测量系统，提出一种实用广角成像系统几何畸变数字实时校正方法，阐述其畸变参数的标定方法，图像的空间变换和灰度插值方法，基于实时性要求，给出畸变校正的算法步骤，实验表明，此广角成像系统几何畸变数字实时校正方法有效提高了角位置测量系统的测量精度，并具有一定的实时性能。     

航向随动控制与姿态畸变校正的数学分析

在景象匹配定位系统中，采用下视的方式获得地面图像。由于受飞行载体空间的限制，有时需要采取航向随动、滚动俯仰捷联方案。这样获取的地面图像只是纵轴与地理坐标保持一致，存在着飞行载体的俯仰、滚动等姿态导致的畸变，需对图像进行姿态畸变校正。这里给出航向随动控制调整角α与姿态角(φ，θ，γ)的数学关系以及姿态畸变校正的基本公式。     

AOTF相机成像过程中的图像畸变分析及校正研究北大核心CSCD

针对声光可调谐滤波器(AOTF)自身固有的因声光互作用导致的成像畸变问题,利用AOTF的解析表达式和几何像差公式对AOTF相机的畸变特性进行分析,建立了声光互作用图像畸变模型,给出了各畸变系数随入射光传播角的变化关系;并在所构建畸变模型的基础上,结合两步标定法和双线性内插法对畸变图像进行校正分析。实验结果表明,未加AOTF相机系统拍摄图像的最大畸变像素位移量为1.6pixel,加AOTF相机系统拍摄图像的最大畸变像素位移量为9.0pixel,畸变校正后的最大畸变像素位移量为1.4pixel,优于未加AOTF相机系统所拍摄的图像。该畸变模型较好地描述了AOTF相机的畸变产生机理及特性,该方法可以有效地解决AOTF相机成像过程中的图像畸变问题,在AOTF光谱相机的精确测量方面将有较好的应用前景。     

大视角成像系统的快速精确校正

在成像系统中，非线性几何畸变的高精度数字校正仍然是一个未能很好解决的问题。以径向几何畸变为主的非线性几何畸变模型为基础，通过对影响畸变参数测量精度的各种因素的分析，提出了一种不依赖于成像系统内部参数的迭代算法。实验表明，该方法能够精确地推算出实现畸变校正所需的参数，校正精度与CCD的采样量化值相当。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.