多通道可调谐1.55μm光子晶体滤波器

建立了（AB）N型一维光子晶体结构多通道可调谐滤波器模型,其中A层是砷化镓（GaAs）材料,B层是由掺铝的氧化锌层和氧化锌层（AZO/ZnO）交替排列构成的具有人工周期结构的各项异性材料。根据电磁波的传输矩阵理论,推导了光子晶体的透射率公式。数值模拟表明:此结构光子晶体透射中心波长是1.55 m,对应于光子通带;透射峰的数量由光子晶体的周期N决定;B层中填充因子h从2/3增加到11/12,峰值波长蓝移且移动范围超过200 nm;A和B层厚度增加,透射峰中心波长发生红移;而入射角度的增加将使透射峰中心波长蓝移;在各参数的调控范围内,光子晶体均保持较高的透射率不变。这些现象为光通信波段多通道可调谐高性能滤波器的设计提供了理论参考。     

准周期结构一维光子晶体的带隙特性与滤波特性

研究了准周期结构一维光子晶体的带隙特性和滤波特性,对ZnS与MgF2和GaAs与AlAs两种电介质组合的光子晶体在层厚不变、折射率递变和折射率不变、层厚递变以及层厚不变、折射率比递变三种情况下的透射谱作了模拟计算,得到了带隙特性的变化规律,并指出了其在滤波中的应用.与周期结构光子晶体相比,准周期结构光子晶体的透射谱发生移动,带隙宽度改变.     

可调谐光子晶体偏振通带滤波器的理论研究

通过对设计出的一维掺杂光子晶体的数值计算和理论分析,得出了TM波和TE波缺陷模随入射角变化的特征以及TM波缺陷模随杂质光学厚度的变化特征为:TM波的缺陷模透射峰在入射角为0～π/2范围内均存在,而TE波的缺陷模透射峰只在入射角为0～0.65 rad范围内存在;在一定波长范围内TM波缺陷模的波长随杂质光学厚度近似呈线性变化.以此为基础,设计出滤波通道波长的可调范围达290 nm、滤波通道半高宽的可调范围在1.5～3 nm、滤波通道的透射峰值大于0.98的可调谐一维光子晶体偏振通带滤波器.     

厚度误差对特定波段光子晶体温度传感器的影响

以工作在特定波段的光子晶体温度传感器作为研究对象,通过具体的数值模拟发现:温度变化时,基于光子晶体的热膨胀效应和热光效应,透射峰峰值保持不变,同时透射峰和光子带隙发生漂移。测量透射峰中心波长或光子带隙的起始波长即可得到光子晶体对温度变化的灵敏度。分析了介质层的厚度误差对光子晶体温感特性的影响。引入误差后,透射峰与光子晶体温度传感器的灵敏度保持不变,但透射峰的中心波长与光子带隙所在波段发生改变,从而影响了光子晶体温度传感器的工作波段。     

准分形结构光子晶体的滤波特性

在考虑色散关系的基础上,利用传输矩阵法讨论了由LiF和Si组成的一维准分形结构光子晶体的透射模特征.结果表明:该准分形光子晶体的透射模半峰全宽度极窄,两介质层的几何厚度分别增加时,透射模中心波长红移,反之中心波长蓝移;且中心波长的移动量和介质几何厚度的增量间有线性关系.当介质保持基本厚度不变而入射角θ≤5°时,透射模中心不变,透射率有少许下降;θ较大时,透射模中心波长蓝移,透射率变小,入射角越大,透射率下降得越多.蓝移量也越大,且这两种变化量与入射角增量间呈非线性关系.上述结论对于准分形光子晶体滤波器的实验研究具有一定的参考价值.     

左右手材料光子晶体的双重光学滤波功能

为了设计高品质、高性能的光学滤波器件,采用传输矩阵法,研究左右手材料构成的光子晶体（HL）mDl（LH）m的窄带和宽带通道双重光学滤波功能,并进行了计算机仿真。介质层H是左手或右手材料时,随着排列周期数m增大,在频率ω/ω₀奇数倍处均出现单条窄透射峰;当m不等值变化时,ω/ω₀奇数倍处透射峰透射率均下降且下降速度相同,而ω/ω₀偶数倍处通带透射率不变;H为左手材料时,ω/ω₀偶数倍处还出现通带,且m越大透射峰或通带越窄,ω/ω₀奇数倍处及周围还出现多条窄透射峰。结果表明,光子晶体由左右手材料组成时将得到更好的宽、窄带双重光学滤波效果及调制方法。该研究对新型光学滤波器件的研究和设计具有指导作用。     

负折射激活介质一维光子晶体超窄带滤波器研究

把一维时域有限差分方法用于可见光区一维光子晶体超窄带滤波设计研究,首先适当选择完整的一维二元光子晶体参数找到可见光区中的禁带,然后在完整一维光子晶体中间引入缺陷层可得到在某一波长出现超窄通带.进一步研究缺陷层参数物理厚度、折射率对超窄带的位置、透过率的调节,数值结果表明当缺陷层用无损介质时超窄通带的中心波长与缺陷层物理厚度、折射率有很大关系,透过率与它们关系不大.当介质是有损或激活介质时超窄通带的中心波长与介质折射率虚部消光系数、激活系数大小无关,消光系数越大透过率越小,激活系数与透过率没有线性关系但有最大值出现,当缺陷层介质是负折射材料时折射率数值在一定范围内取值同样会出现窄带滤波特性,折射率数值绝对值较大时在可见光区禁带中会出现多个透过峰.     

对称结构的一维三元光子晶体滤波特性的研究

构造了形如(AB)N1(BA)N2的具有对称结构的一维三元光子晶体,并利用光子晶体的传输矩阵法进行了数值计算.发现这种对称结构的光子晶体透射谱中主禁带内存在极窄的单透射峰,与在这种对称结构的光子晶体中引入一定尺寸范围的缺陷层有相似的效果,并分析了这种光子晶体主禁带内的透射峰位置λ,起始位置λ1和终止位置λ2随所取周期数Ni(i=1,2)、折射率nj(j=1,2,3)和厚度a、b、c的变化规律,得出在小范围内可以近似认为它们均成线性变化和N1=N2=7为理论最优化周期数的结论.利用这些性质在一束波长范围在2280～2396 nm的混合光中,用折射率n1为1.378、厚度a为159 nm的氟化镁,折射率n2为2.356、厚度b为200 nm.的硫化锌,以及折射率n3为4.100、厚度c为400 nm的碲化铅为光子晶体材料,通过调节参数变化,提取出了需要的波长为2351 nm的光,滤波效果很好.     

正负材料的一维矩形光子晶体特性研究

对正负折射率材料构成的一维光子晶体,在横向矩形受限的条件下,推出了光波在其中不同模式所满足的条件,并利用特征矩阵法研究了光波不同模式的传播特性。结果表明：介质厚度为半波长时透射峰出现在中心波长处,与正折射率介质构成的光子晶体在中心波长或半波长处出现禁带完全不同;模式数即入射角不大时,透射波基本上具有相同的特性;介质折射率相差越大、周期增加都能使透射波谱宽度变窄。     

三层单负材料为周期单元异质结构光子晶体的透射特性

应用传输矩阵法研究了以三层单负材料组成周期单元的异质结构光子晶体(ABA)M(CDC)N(ABA)M(CDC)N的光子禁带,相比于由两层单负材料构成的光子晶体(AB)M,具有更狭窄的通带,对结构周期数和入射角同样是不敏感。研究还发现,平均介电常数和平均磁导率均为零的该异质结构,其能带宽度随晶格常数的增大而逐渐变窄,这一特性可以用来设计单通道滤波器件,同时由于电磁波有效波矢量为零,利用这一特点可以设计零有效相位延迟滤波器。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.