使用传统工艺实现1.55μm激光器与模斑转换器的单片集成

采用传统的光刻和湿法腐蚀工艺制作了1.55μm波长的新型半导体激光器和模斑转换器的单片集成器件.其中激光器采用脊型双波导,模斑转换器采用掩埋双波导结构,水平楔型的有源波导和宽而薄的无源波导同时控制光斑模式大小.实验测得器件的阈值电流为40mA,斜率效率为0.35W/A,水平和垂直方向的远场发散角分别为14.89°和18.18°,与单模光纤的耦合损耗为3dB.     

使用传统工艺实现1.55μm激光器与模斑转换器的单片集成

采用传统的光刻和湿法腐蚀工艺制作了1.55μm波长的新型半导体激光器和模斑转换器的单片集成器件.其中激光器采用脊型双波导,模斑转换器采用掩埋双波导结构,水平楔型的有源波导和宽而薄的无源波导同时控制光斑模式大小.实验测得器件的阈值电流为40mA,斜率效率为0.35W/A,水平和垂直方向的远场发散角分别为14.89°和18.18°,与单模光纤的耦合损耗为3dB.     

全波导带宽的高方向性耦合器件

高方向性耦合器件是微波系统、微波测量中的重要器件。机电部二○六所研制的全波导带宽的高性能耦合器件能满足您在微波测量和微波工程中的大多数需求。已研制了覆盖2600MH_2～60000MH_2的宽带波导高方向性耦合器(图A、B)、双向耦合器(图C、D)、双定向耦合器(图E)、同相耦合功分器(图F)。波导型号从BJ—32～BJ—500共十五个波导频段。耦合度有3dB、6dB、10dB、20dB、40dB和60dB。隔离度和方向性高达40dB以上。主线VSWR     

半导体激光器电吸收调制器和双波导模斑转换器的单片集成

报道了1.6μm的半导体激光器和电吸收调制器以及双波导模斑转换器的单片集成器件.该器件具有良好的单横模特性和准单纵模特性(边模抑制比达25.6dB),3dB调制带宽为15GHz,直流消光比为16.2dB,远场发散角为7.3°×18.0°,和单模光纤的耦合效率达3.0dB.     

基于SOI的16通道200GHz阵列波导光栅

设计并制作了基于绝缘体上硅(SOI)材料的1×16阵列波导光栅(AWG).该AWG器件的中心波长为1 550 nm,信道间隔为200 GHz,采用了脊型波导结构.首先确定了波导的结构尺寸以保证单模传输,并利用束传播法(BPM)模拟了波导间隔、弯曲半径和锥形波导长度等参数对器件性能的影响,对器件结构进行了优化,同时也利用BPM方法模拟了器件的传输谱.模拟结果显示:器件的最小信道损耗为4.64 dB,串扰小于-30 dB.根据优化的器件结构,通过光刻等半导体工艺制作了AWG,经测试得到AWG器件的损耗为4.52～8.1 dB,串扰为17～20 dB,能够实现良好的波分复用/解复用功能.     

K -Na 离子交换1×32光功分器的设计

设计了玻璃基K+-Na+离子交换1×32级联Y分叉光功分器.由于采用了一种新型的器件结构形式,光功分器的长度得以缩短,当输出波导间距为127 μm、波导最小曲率半径为30 mm时,器件总长只有20 mm.为了提高器件的功分均匀性,对波导的泄漏模进行了控制,使一阶泄漏模的损耗速度达到32 dB/cm.为了提高波导与光纤的耦合效率,器件输入输出端进行了光斑尺寸变换,使光纤-波导的耦合损耗降低到0.26 dB.     

聚合物双环谐振滤波器的研究

设计了一种基于多模干涉(MMI)耦合输入/输出结构的跑道型双微环串联谐振滤波器,并采用紫外光敏聚合物材料SU-8作波导芯层,聚合物CYTOP为下包层,在硅基底上完成了器件的制备.器件的波导端面尺寸为2 μm×1 μm,与设计值相符,扫描电镜显示所制备的器件波导侧壁陡直度较高.直波导传输损耗的测试结果表明,在1550 nm波长,直波导传输损耗约为2.0 dB/cm.测试并获得了多模干涉结构和器件的通光及输出光谱图\.测试结果表明,MMI结构在较宽的波长范围内实现了接近50∶50的功分比,微环谐振滤波器的通光性能良好,实现了滤波功能,器件的自由光谱区FSR实际值约为0.94 nm,与设计参数值很接近.研究结果表明采用聚合物SU-8制备小波导尺寸微环谐振器的器件简便可行.     

新型直波导阵列波导光栅的设计与仿真

提出了一种基于直波导的新型阵列波导光栅(AWG).与常规阵列波导光栅器件相比,该方法简化了器件结构与制备工艺,有望提高器件成品率,降低器件制作成本.器件的输入/输出耦合器采用自聚焦平板波导(GISLAB),其输入/输出均为平端面.阵列波导采用直波导取代常规AWG的弯曲波导,可采用光敏平板波导材料通过两次紫外写入实现.采用半矢量光束传输法对器件进行模拟,结果表明该器件可以实现多波长的解复用,其解复用的信道间隔为3.2 am,输出光谱非均匀性约为1.6 dB.     

32信道聚合物阵列波导光栅的制作与测试

对一个32通道的聚合物阵列波导光栅进行了研究和制作.经过旋涂、光刻、反应离子刻蚀等工艺过程,利用A1掩膜技术和回融技术进行了器件的制作.实验结果表明,回融技术使样本的波导表面的均方根粗糙度降低了约0.02μm.测试结果表明,器件的结构指标与理论设计值基本相符,并且波导在C波段上实现了单模传输.器件的插入损耗约为35dB,相邻通道串扰小于-20dB,很好地实现了波分复用功能.     

MMI阵列波导光栅复用/解复用器的研制

详细分析了基于自镜像效应的MMI DMUX器件的基本工作原理,在此基础上,在SOI材料上完成了对8信道MMI DMUX的具体设计.该器件的输入、输出单模波导采用Soref的大截面脊形光波导理论进行优化设计,最后获得了当输入、输出单模波导宽度为5μm,SIE多模波导宽度和长度分别为72μm和6313.4μm时,该器件对8信道波长的隔离度均在35dB以上,且理论传输损耗＜0.18dB.     

采用移频反馈的SOA多波长光纤环形激光器

文章报道了一种基于移频反馈的半导体光放大器(SOA)多波长光纤环形激光器,其环腔内插入声光调制器作为移频器,用自制的光纤马赫-曾德干涉仪进行梳状滤波,在输出光谱1.5 dB带宽为21.7 nm范围内,获得了间隔50 GHz的54个稳定的多波长连续光激射,消光比为28 dB.该激光器具有工作稳定性好、输出光谱宽和不同波长功率平坦度高的优点.实验证明,移频反馈技术能够实现激光器不同起振波长间的增益均衡,使输出光谱带宽增大21.7%.     

Optimal design of a multi-mode interference splitter based on SOI

In this paper, the multimode waveguide lengths and the output port locations of a SOI （silicon on insulator） material-based 1×4 MMI （multimode interference） optical splitter are optimized by means of FD-BPM （finite difference - beam propagation method）. An improved 1×4 MMI optical splitter is designed. Compared with an usual optical splitter, a smaller loss 0. 12dB and a better output port power uniformity 0.11dB are achieved for the optical signal transmission.     

Variable optical attenuator based on a cutoff modulator withtapered waveguides in polymers

A variable optical attenuator was demonstrated by using a thermooptic cutoff modulator in polymers. It combined horizontally and vertically tapered waveguide structures to improve both the attenuation efficiency and the fiber coupling. The rib height of the waveguides in the input and output region was chosen to achieve minimum fiber coupling loss. For the waveguide in the active region with the electrodes, the rib height was reduced and the width was tapered in order to enhance the attenuation performance by weakening the mode confinement. The two waveguides with different rib heights were connected smoothly by employing a vertical taper, which was realized by utilizing two steps of reactive ion etching with a shadow mask. Then a fiber coupler built in a silicon block was attached directly to the output end of the device. A fraction of the main attenuator output was tapped and fed back to the electrical driver to achieve constant output regardless of variations in input light power and polarization. The measured insertion loss of the attenuator was 2.5 dB at 1550 nm. The dynamic range was more than 20 dB with an electrical power consumption of 160 mW. And the optical response time was faster than 1.5 ms. The effect of polarization on the attenuation was reduced to 0.1 dB by employing a continuous electronic feedback control. The wavelength uniformity was as small as 0.3 dB over the range from 1530 to 1560 nm. Finally, the attenuator was successfully used to regulate channel powers within 0.4 dB in a wavelength division multiplexed transmission system     

Up to 16 dB improvement in detected voltage using two-section semiconductor optical amplifier detector

A semiconductor optical amplifier detector with an improved responsivity, obtained using two contacts is demonstrated. It is shown hat up to 16 dB improvement in detected output voltage may be obtained for a semiconductor optical amplifier with an internal gain of 30 dB. Initial experimental results showing a 4 dB improvement are presented.<>     

High-output-power polarization-insensitive semiconductor optical amplifier

A high-output-power 1550 nm polarization-insensitive semiconductor optical amplifier (SOA) was developed for use as a compact in-line optical amplifier. A very thin tensile-strained bulk structure was used for the active layer and active width-tapered spot-size converters (SSCs) were integrated on both input and output sides. The SOA module exhibited a high saturation output power of +17 dBm together with a low noise figure of 7 dB, large gain of 19 dB, and low polarization sensitivity of 0.2 dB for optical signals of 1550 nm wavelength. For the amplification of optical signals modulated at 10 Gb/s in the nonreturn-to-zero (NRZ) format, a good eye pattern without waveform distortion due to the pattern effect was obtained at an average output power of up to +12 dBm. Additionally, good amplification characteristics were demonstrated for the signal wavelength range corresponding to the C-band.     

A 10-Gb/s optical transmitter module with a monolithicallyintegrated electroabsorption modulator with a DFB laser

A compact 10-Gb/s optical transmitter module with small-chirp output was developed by using a monolithically integrated electroabsorption modulator with a distributed-feedback laser. This module can be operated at a bit rate of more than 10 Gb/s at 1.55 μm, and shows a high modulated output power of ~1 dBm with a low optical coupling loss of 3.2 dB between chip and fiber. A multifunctional and compact optical isolator with a monitor photodiode was also developed to decrease noise     

基于Hi-Bi FLM的离散式L带可调谐掺铒光纤激光器

研究了利用高双折射光纤环形镜（HiBiFLM）结合L带可调谐的波长选择薄膜滤波器,以掺Er^3＋光纤为增益介质,以0．8nm波长间隔计,可获得L波段41个离散可调谐波长的可调谐输出,各信道波长输出功率变化的最大幅度小于3．1dB,光信噪比（OSNR）优于32dB。     

Fiber-pigtail-detachable plastic MiniDIL transmitter module with a tool-free optical connector

A fiber-pigtail-detachable plastic MiniDIL transmitter module using a tool-free optical connector and applicable to the OC 3 and OC 12 in the SONET/SDH standards has been developed as a cost-reducing solution. The newly developed optical connector works without a special tool to connect and disconnect it from the module. Transmitter fiber output of more than 0.4 mW, insertion loss of less than 0.3 dB, return loss of more than 55 dB, and a repeatability of more than 30 times were achieved.     

MEMS可调谐平顶窄带光学滤波器

设计了一种基于MEMS技术的可调谐光学滤波器,它通过光栅将输入的宽带光信号色散展开,以一个MEMS扭镜选择将对应滤波器通带的光信号反射至输出端,从而实现光学滤波和波长调谐功能。滤波器的输入端采用单模光纤,输出端采用多模或者少模光纤,可以实现窄带且平顶的通带特性。经过参数优化,仿真分析得结果显示,采用多模/少摸光纤输出的两种滤波器,其0.5 dB和25 dB带宽分别为0.95 nm/0.29 nm和1.39 nm/0.69 nm,分别满足100 GHz和50 GHz信道间隔的DWDM系统要求。由于输出端采用多模或者少摸光纤,从该滤波器输出的光信号不能继续在单模光纤中传输,只能由光探测器接收,因此该滤波器一般应用于全光网络节点中的下载端口。