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本文设计出了具有电容反馈互导放大器(CTIA)及相关双采样(CDS)结构的非制冷红外焦平面的读出电路,搭建了包括红外信号源和IRFPA模块、控制模块、ROIC 驱动模块和信号放大采集处理模块在内的红外焦平面阵列参数测试系统,并用此测试系统对本实验室自行研制的小规模红外焦平面阵列进行了读出电路测试、数据处理和分析,测试结果与理论标称值吻合。 相似文献
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红外焦平面读出电路技术及发展趋势 总被引:2,自引:0,他引:2
从红外焦平面技术的发展背景出发,论述了读出电路在红外焦平面信号传输中的作用并介绍其基本框图,讨论了CCD读出电路和CMOS读出电路各自的特点,并分析了国内外红外焦平面读出电路的现状,最后提出了红外焦平面阵列读出电路今后的研究方向. 相似文献
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红外焦平面阵列读出电路技术分析 总被引:7,自引:7,他引:7
从红外焦平面技术的发展背景出发,论述了读出电路在红外焦平面信号传输中的作用;讨论了用于实现红外焦平面阵列读出电路的一些实施技术;并对各种实现技术进行了分析比较;最后提出了红外焦平面阵列读出电路今后的研究方向。 相似文献
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在过去的10年里红外焦平面阵列成像技术逐渐进入了成熟期,从红外焦平面的发展背景出发,简要介绍了一种新颖的非制冷焦平面成像技术,论述了读出电路在红外焦平面信号传输中的作用并介绍了其基本框图,分析了国内外焦平面读出电路的现状,最后提出了一些在红外焦平面阵列读出电路设计中所需要注意的问题。 相似文献
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读出电路(ROIC)是非致冷红外焦平面阵列器件(UIRFPA)的关键组成部分之一。RO-IC性能的好坏直接影响到UIRFPA的性能,非致冷红外焦平面阵列读出电路的噪声抑制也是一个研究的热点。文章探讨了非致冷红外焦平面阵列读出电路的噪声及抑制方法。仿真实验结果表明,该方法具有一定的先进性。 相似文献
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红外焦平面读出电路(IRFPA ROIC)主要用于焦平面阵列与后续信号处理之间的通信.文章提出了一种用于红外焦平面读出电路的缓冲器模块,包括列缓冲器、高性能的输出缓冲器以及相应的偏置电路.缓冲器均采用单位增益放大器结构,通过放大器的优化设计可实现对不同负载的有效驱动且静态功耗较低.该缓冲器模块用于一款640×512面阵、30μm中心距的中波红外焦平面读出电路,采用CSMC 0.5μm DPTM工艺进行流片加工.仿真结果表明,列缓冲器的开环增益为40.00 dB,单位增益带宽为48.17 MHz(10 pF).输出缓冲器可实现轨到轨的输入,开环增益为39.68 dB,单位增益带宽为46.08 MHz,读出速率高达20 MHz,功耗为16.02 mW(25 pF//5.1 kΩ).该模块输入端拉出的测试管脚可在焦平面读出电路的晶圆测试中帮助验证芯片功能.通过调节测试端口,测试结果与仿真结果大体一致,验证了该缓冲器模块的设计可行. 相似文献
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High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
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In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
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This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
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YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献
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The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs. 相似文献
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Meihua Shen Wilfred Pau Nicolas Gani Jianping Wen Shashank Deshmukh Thorsten Lill Jian Zhang Hanming Wu Guqing Xing 《半导体技术》2004,29(8)
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration. 相似文献
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White organic light-emitting devices based on fac tris(2- phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap -hthacene 总被引:1,自引:0,他引:1
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V. 相似文献
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Complete approach to automatic identification and subpixel center location for ellipse feature 总被引:1,自引:0,他引:1
XUE Ting WU Bin SUN Mei YE Sheng-hua 《光电子快报》2008,4(1):51-54
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction. 相似文献
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We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network. 相似文献