VB调用Matlab在WEDM仿真系统中的应用

在分析VB与Matlab接口方式的基础上,实现了在VB开发环境中采用ActiveX技术调用Matlab神经功能算法的接口方式。充分利用VB开发界面友好和Matlab运算强大及图示功能的各自优点,开发并实现了基于BP神经网络的电火花线切割工艺仿真系统。工艺仿真结果表明,利用VB调用Matlab混合编程建立的预测模型可以正确反映机床的工艺规律,建模算法是成功的,并能够应用于指导和分析生产实践。     

基于Matlab与VB的过程控制实验仿真系统设计

针对实验室现有的过程控制实验系统装置价格高,占用空间大,台数少的现状,采用VB与Matlab混编技术,设计了过程控制实验仿真系统。该系统利用在用户界面设计和快速开发等方面具有独特优势的VB设计界面,在界面处实现参数设置,仿真图形显示和保存等操作,利用在建模和仿真等方面具有独特优势的Matlab建立仿真模块,仿真过程实现后台运行。该系统能够弥补现有实验装置的不足,可作为计算机辅助教学软件使用。     

“过程控制系统”CAI课件开发

本文介绍了“过程控制系统”CAI课件的开发。结合开发工具的特点提出了以VB作为前端开发环境、Matlab作为后端仿真工具的设计方案,依据教学要求分析了CAI课件的功能,并进行了软件结构设计。在软件实现中,阐述了基于ActiveX的VB与Matlab混合编程技术,同时就利用Simulink实现系统仿真、仿真曲线与文本及图形的显示等关键技术作了必要说明。“过程控制系统”CAI课件的开发对于改进该课程的教学具有一定的现实意义。     

基于Matlab WebServer的数字信号处理远程仿真

Matlab在工程计算、数据分析和计算机仿真等方面都具有强大的功能,可作为教学的辅助手段应用于课程的远程教育.本文介绍了基于Matlab WebServer的远程仿真的设计思想和实现技术,并结合"数字信号处理"课程的远程仿真实例进行说明.这种基于Matlab WebServer进行的远程仿真为计算机辅助教学提供了一种可行的解决方案.     

基于 RTW 的控制系统一体化设计平台

本文提出了一套全新的计算机控制系统设计、仿真、实验一体化方案。使得系统设计、数字仿真和目标实现的全部过程都可在Matlab的环境下完成。其中的关键部分——实时控制采用Matlab/Simulink/RTW,使控制系统在理论设计与Matlab数字仿真后无需编程即可快速进入实物仿真实验阶段。文中探讨了其中关键技术问题的解决方法,并通过吊车控制系统设计和实物仿真的过程,可以体现该方法具有的效率高、费用低、界面友好以及具有实时监测系统的动态过程和在线实时修改参数功能的优点。     

基于Matlab的自适应算法仿真平台的设计与实现

文中详细论述了基于Matlab的自适应算法仿真平台的设计和实现。在实现各算法编程的基础上,利用Matlab的GUI设计功能,采用M脚本文件实现了该平台的交互式用户仿真界面。平台具有界面友好、操作方便、交互性强、开放式、可视化和易扩充等优点。利用该平台可进行自适应算法的性能仿真、分析和比较,也可解决相关高校教学中教学工具不足的问题。     

VB与Matlab混合编程在步进电机曲线插补运算中的应用

通过VB与Matlab混合编程的方式,完成了分布式步进电机控制系统中上位机数据计算的软件设计。该程序设计中用Matrix VB将Matlab函数转换为VB中可用的动态链接库。从而方便地完成了曲线轨迹的计算和显示,大大提高了实时加工中曲线轨迹的运算速度。     

基于VB与MatrixVB的模糊C均值方法实现

针对Visual Basic数值计算能力和图像处理能力的不足,不利于系统开发,介绍了模糊C均值法的原理及其基于VB和MatrixVB的实现;该方法将Matlab的强大计算功能与VB的Windows用户界面开发方面优势结合起来,充分发挥各自优势,缩短了软件的开发周期.软件测试结果表明,该计算方法正确,软件界面友好,计算速度快,系统资源消耗少,操作简便易行,能满足数据分类的要求.     

基于工业模型的新型PID实验系统设计

基于Matlab仿真的传统PID实验系统,不仅缺少实际控制对象,且存在一定的抽象性。为了完善该系统,设计实现了一种基于工业模型的新型PID实验系统。该系统在原有仿真实验的基础上,增加了工业电机控制模型,并以LPC2114为核心处理器,L298N为电机驱动的直流电机控制系统,通过Matlab编程进行PID实时控制。实验证明,该系统不仅保留了Matlab仿真实验的准确性,更能体现出PID参数变化对系统的影响,展现了PID的工业控制效果,提高PID实验系统的直观性。     

中频数字化接收机系统建模与仿真

对于中频数字化接收机,通常采用Matlab的可视化工具Simulink进行建模和仿真,功能模块都是调用Matlab的子函数来实现,因此系统模型与硬件实现会有一定的差异,导致仿真结果与实际性能不能完全一致。介绍采用Matlab语言编程实现中频数字化接收机的建模和仿真,使系统模型尽可能与真实的硬件平台相一致,仿真结果更接近实际情况。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.